In this talk, I will highlight our recent efforts in modeling Ga2O3 and other oxide materials and devices for application in power electronics. First, I will show the results of techno-economic analysis of the manufacturing cost of Ga2O3 wafers, supporting their projected cost advantage compared to SiC and GaN [1] Next, I will describe finite element analysis of electrical and thermal performance of vertical Ga2O3 transistors reported in literature, comparing MOSFET to FinFET device architectures [2]. Finally, I will summarize the findings of first-principles computational search for wide band gap semiconductors with high figures of merit and large thermal conductivity, highlighting new oxide material candidates for power electronic applications [3].
[1] Joule 3, 1 (2019)
[2] ECS Journ. Sol. St. Sci. Tech. 8 Q3202 (2019)
[3] Energy Environ. Sci. (2019) DOI: 10.1039/c9ee01529a
More than 30% of electrical energy passes through power electronics today with speculation that in the next decade this could grow to 80%. The wide bandgap semiconductor market is already approaching $1 billon USD in 2019 and is projected to be almost $7 billion USD in 2028. Even with its high cost, SiC, is starting to dislodge the incumbent Si technology in some applications, such as hybrid and electric vehicles, due to smaller size, and higher efficiency. We review and report the IHS Markit’s market predictions for wide bandgap semiconductor technologies, and highlight the technoeconomic analysis results for the manufacturing cost of Ga2O3 wafers. Specifically, we focus on the potential for Ga2O3 to be more economically advantageous than SiC using current manufacturing methods and then identify opportunities where research can further reduce the volume cost of Ga2O3 wafers.
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