A comparison between QD lasers with and without tunnel-injection QW designs was performed. In both cases, six layers of a QD or TI-QD design were grown by molecular beam epitaxy equipped with group-V valved cracker cells. The InAs QDs are embedded in InAlGaAs barriers lattice matched to InP. The TI-QW consists of InGaAs separated by a thin InAlGaAs tunnel barrier. The lasers were processed into broad area and ridge waveguide lasers. Both laser designs exhibited high modal gain values in the range of 10-15 cm<sup>−1</sup> per dot layer. The static and dynamic device properties of the different QD laser designs were measured and compared against each other.