Molecular redox dopants are tested concerning their application to organic thin-film transistors (OTFT). Here we report
on the feasibility of solution processing of molecular-doped transport layers, showing high air-stability of solutions and
layers. We apply capacitance spectroscopy to investigate the interface of intrinsic and electrically doped layers. We also
show that there is virtually no dopant migration in real devices, even when high electric fields up to 300 kV/cm2 are
applied for 1000 h. We report on p- and n-type on OTFTs with silver contacts. The application of injection layers based
on redox dopants improves the measured field-effect mobility by about 2 orders of magnitude.
The use of organic light-emitting diodes (OLEDs) for large area general lighting purposes is gaining increasing interest during the recent years. Especially small molecule based OLEDs have already shown their potential for future applications. For white light emission OLEDs, power efficiencies exceeding that of incandescent bulbs could already be demonstrated, however additional improvements are needed to further mature the technology allowing for commercial applications as general purpose illuminating sources. Ultimately the efficiencies of fluorescent tubes should be reached or even excelled, a goal which could already be achieved in the past for green OLEDs.1 In this publication the authors will present highly efficient white OLEDs based on an intentional doping of the charge carrier transport layers and the usage of different state of the art emission principles. This presentation will compare white PIN-OLEDs based on phosphorescent emitters, fluorescent emitters and stacked OLEDs. It will be demonstrated that the reduction of the operating voltage by the use of intentionally doped transport layers leads to very high power efficiencies for white OLEDs, demonstrating power efficiencies of well above 20 lm/W @ 1000 cd/m2. The color rendering properties of the emitted light is very high and CRIs between 85 and 95 are achieved, therefore the requirements for standard applications in the field of lighting applications could be clearly fulfilled. The color coordinates of the light emission can be tuned within a wide range through the implementation of minor structural changes.
To realize organic solar cells with high performance, we developed a novel way of stable n-doping using cationic dyes in electron transport materials. In our approach, the volatile donors are created in-situ from stable precursor compounds. Using the cationic dye pyronin B (PyB) as a model precursor, we carried out conductivity and field effect measurements to characterize the properties of doped naphtalene tetracarboxylic dianhydride (NTCDA) thin film. The results show a strong increase in n-type conductivity. Combined FTIR, UV/VIS/NIR and mass spectroscopic measurements suggest the formation of leuco pyronin B during sublimation of pyronin B chloride, and a subsequent charge transfer between dopant and matrix providing free electrons, which increase the n-type conductivity.
We demonstrate high-efficiency organic light-emitting diodes (OLEDs) by incorporating a double emission layer (D-EML) into p-i-n-type cell architecture. The D-EML comprises two layers with ambipolar transport characteristics, both doped with the green phosphorescent dye tris(phenylpyridine)iridium [Ir(ppy)3]. The first EML features a bipolar, but predominantly hole transporting host material, 4,4',4''-tris(N-carbazolyl)-triphenylamine (TCTA), while the second EML is made of an exclusively electron transporting host, e.g. 3-phenyl-4-(1'-naphthyl)-5-phenyl-1,2,4-triazole (TAZ); with a weak hole transport capability arising from hopping between dopant sites. The D-EML system of two bipolar layers leads to an expansion of the exciton generation region. Due to its self-balancing character, it avoids accumulation of charge carriers at any interface. Thus, a power efficiency of approximately 77 lm/W and an external quantum efficiency of 19.3% are achieved at 100 cd/m2 at an operating voltage of only 2.65V. More importantly, the efficiency decays only weakly with increasing brightness and a power efficiency of 50 lm/W is still obtained even at 4,000 cd/m2.
We present a novel n-type doping technique for organic semiconductors using the metal complex bis(terpyridine)ruthenium as a strong donor. Owing to its low oxidation potential, the reduced neutral form of the donor complex allows an electron transfer to the matrix. This enables n-type conduction that has been seldom reported in metallophthalocyanine systems doped with organic compounds. The n-type zinc-phthalocyanine layers are characterized by the conductivity and the field-effect measurements. By sequential coevaporation of p- and n-doped layers, we have prepared the first stable and reproducible organic
homojunction of zinc-phthalocyanine. The diode exhibits surprisingly high built-in voltage attractive e.g. for organic solar cell applications. The temperature dependence of the
current-voltage characteristics does not follow the standard Shockley theory of pn-junctions. We explain the behavior of the ideality factor and the saturation current by deviations from the classical Einstein relation at low temperatures.
We demonstrate an efficient organic electroluminescent devices with p-i-n structure. Anamorphous starburst, 4,4',4'-tris(3-methylphenylphenylamino)triphenylamine doped with a strong organic acceptor, tetrafluoro-tetracyano- quinodimethane serves as the p-type hole transport layer, and 4,7-diphenyl-1, 10-phenanthroline doped with Li as the n-type electron transport layer. A breakthrough is achieved in the performances of device based on pure 8-tris- hydroxyquinoline as an emitter: 100cd/m2 at 2.52V, 1,000cd/m2 at 2.9V and the maximum luminance and efficiency reach 66,000cd/m2 and 5.25 cd/A, respectively. The efficiency can be kept above 3cd/A in a very large luminance region from 100 to 55,000cd/m2.
Organic light emitting diodes generally suffer from higher operating voltages compared to inorganic ones. This limits their application in passive or active driven displays based on OLED-technology. As was previously shown by our group, p-type doping of the hole injection and transport layer of an organic light emitting diode (OLED) by co-evaporation of a matrix and an acceptor molecule leads to lower operating voltages of the device. In OLEDs using doped transport layers, the use of a proper buffer layer between the doped layer and the light emission layer is essential to yield a high current efficiency and a low operating voltage at the same time. In order to further enhance the device efficiency, we apply here the doping concept to OLEDs with a light emission layer which is doped with a fluorescent dye. This approach proves that doping of the transport layer is able to improve the optoelectronic properties of already highly efficient OLEDs. The doped hole injection and hole transport layer is a Starburst layer p-type-doped with tetrafluoro-tetracyano-quinodimethane (F4-TCNQ). As blocking layer, a diamine (TPD) is used. The emitter layer consists of quinacridone (QAD) doped aluminum-tris-(8-hydroxy-quinolate) (Alq3). Holes are injected from untreated ITO, electrons via a lithium-fluoride (LiF)/aluminum cathode combination. For this OLED layer sequence, we achieved a luminance of 100cd/m2 in forward direction at the lowest operating voltage reported for completely non-polymeric OLEDs (3.2-3.4V) with a current efficiency of around 10cd/A.
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