Prof. Anthony E. Parker Profile

Prof. Anthony E. Parker

at Macquarie Univ

SPIE Involvement:

Author

Proceedings Article | 21 December 2007 Paper

Circuit implementation of a theoretical model of trap centres in GaAs and GaN devices

James Rathmell, Anthony Parker

Proceedings Volume 6798, 67980R (2007) https://doi.org/10.1117/12.758711

KEYWORDS: Electrons, Ionization, Field effect transistors, Transistors, Capacitors, Instrument modeling, Gallium arsenide, Gallium nitride, Control systems, Semiconductors

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A novel and simple circuit implementation of trap centres in GaAs and GaN HEMTs, MESFETs and HFETs is presented. When included in transistor models it explains the potential-dependent time constants seen in the circuit manifestations of charge trapping, being gate lag and drain overshoot. The implementation is suitable for both time- and harmonic-domain simulations. The trap-centre model is based on Shockley-Read-Hall (SRH)¹ statistics of the trapping process. It also accommodates carrier injection from other important device effects, such as impact ionization and light sensitivity. In the model, the ionization charge of the trap centre is represented by the charge in a capacitor. The potential across the capacitor is proportional to the potential across the region of the trap centre in the semiconductor. It is positive or negative depending on the polarity of the ionization charge - electrons or holes. When included in a transistor model, this potential is added to the gate potential that controls the drain-current description. The capacitor is charged or discharged by two opposing currents that are functions of the ionization potential and temperature: one models charge emission; and the other, which is also controlled by an external potential and injected current, models charge capture. The external potential is typically a linear function of a transistor's terminal potentials. The injection current can model charge generated by light or by holes from impact ionization. The four parameters for the model are simply the signed potential of the trap centre when fully ionized, the time constant for charge emission at a specific temperature, the injection-current sensitivity, and the activation energy of the emission process. The latter is used to predict the temperature dependence of the emission rate. The capture rate is determined within the model by an exponential function of the external potential that controls capture. Thus the model elegantly predicts asymmetry between trap charging and discharging rates. The model accounts for variation in emission and capture rates with temperature, which is shown to vary significantly over typical transistor operating ranges.

Proceedings Article | 21 December 2007 Paper

Performance and applications of gallium-nitride monolithic microwave integrated circuits (GaN MMICs)

Jonathan Scott, Anthony Parker

Proceedings Volume 6798, 67980F (2007) https://doi.org/10.1117/12.764253

KEYWORDS: Gallium nitride, Field effect transistors, Transistors, Silicon, Gallium arsenide, Reliability, Amplifiers, Silicon carbide, Microwave radiation, Semiconductors

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Proceedings Article | 21 December 2007 Paper

Geometric dependence of the parasitic components and thermal properties of HEMTs

Peter Vun, Anthony Parker, Simon Mahon, Anthony Fattorini

Proceedings Volume 6798, 67980B (2007) https://doi.org/10.1117/12.759011

KEYWORDS: Field effect transistors, Inductance, Thermal modeling, Instrument modeling, Transistors, Modeling, Circuit switching, Integrated circuit design, Performance modeling, Thermography

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Proceedings Article | 21 December 2007 Paper

Nonlinearity of anti-parallel Schottky diodes for mixer applications

Venkata Gutta, Anthony Parker, Anthony Fattorini, James Harvey

Proceedings Volume 6798, 679807 (2007) https://doi.org/10.1117/12.759032

KEYWORDS: Diodes, Oscillators, Capacitance, Resistance, Intermodulation, Upconversion, Data modeling, Semiconductors, Bismuth, Instrument modeling

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Proceedings Article | 21 December 2007 Paper

Linearity asymmetry in FET resistive mixers

Lindsay Powles, Anthony Parker, Simon Mahon

Proceedings Volume 6798, 67981A (2007) https://doi.org/10.1117/12.759336

KEYWORDS: Field effect transistors, Intermodulation, Distortion, Diodes, Performance modeling, Signal processing, Device simulation, Transceivers, Instrument modeling, Analytical research

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Proceedings Article | 21 December 2007 Paper

Advances in nonlinear characterization of millimetre-wave devices for telecommunications

Anthony Parker

Proceedings Volume 6798, 67980L (2007) https://doi.org/10.1117/12.759297

KEYWORDS: Ionization, Transistors, Intermodulation, Field effect transistors, Telecommunications, Resistance, Networks, Capacitance, Instrument modeling, Microwave radiation

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Proceedings Article | 11 January 2007 Paper

A high-frequency divider in 0.18 um SiGe BiCMOS technology

Noorfazila Kamal, Yingbo Zhu, Leonard Hall, Said Al-Sarawi, Craig Burnet, Ian Holland, Adnan Khan, Andre Pollok, Justin Poyner, Michael Boers, James Howarth, Adam Lauterbach, Jeffrey Harrison, James Rathmell, Michael Batty, Anthony Parker, Linda Davis, William Cowley, Neil Weste, Derek Abbott

Proceedings Volume 6414, 641408 (2007) https://doi.org/10.1117/12.696294

KEYWORDS: Photomicroscopy, Oscillators, Receivers, Linear filtering, Bandpass filters, Logic, VHF band, Signal detection, Sensors, Digital signal processing

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Proceedings Article | 5 January 2006 Paper

Emerging issues in millimeter-wave HEMTs for telecommunications

Anthony Parker

Proceedings Volume 6035, 60350B (2006) https://doi.org/10.1117/12.638388

KEYWORDS: Transistors, Intermodulation, Field effect transistors, Ionization, Distortion, Microwave radiation, Data modeling, Capacitors, Networks, Telecommunications

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Proceedings Article | 5 January 2006 Paper

Transient SPICE model for trap related current lag in devices

Saif Zaman, Anthony Parker

Proceedings Volume 6035, 60351L (2006) https://doi.org/10.1117/12.637951

KEYWORDS: Instrument modeling, Field effect transistors, Digital electronics, Intermodulation, Semiconductors, Ionization, Resistance, Integrated circuits, Device simulation, Electronics

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Proceedings Article | 5 January 2006 Paper

Characterising HEMT devices for MMIC distortion prediction

James Brinkhoff, Anthony Parker

Proceedings Volume 6035, 60351Q (2006) https://doi.org/10.1117/12.638420

KEYWORDS: Distortion, Intermodulation, Field effect transistors, Spectrum analysis, Network security, Instrument modeling, Telecommunications, Phase measurement, Amplifiers, Semiconductors

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Proceedings Article | 5 January 2006 Paper

Characterizing charge trapping in microwave transistors

James Rathmell, Anthony Parker

Proceedings Volume 6035, 60350U (2006) https://doi.org/10.1117/12.638348

KEYWORDS: Thermal effects, Gallium nitride, Transistors, Gallium arsenide, Instrument modeling, Field effect transistors, Data modeling, Microwave radiation, Intermodulation, Time metrology

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Proceedings Article | 8 October 1999 Paper

Modeling HEMT intermodulation distortion characteristics

Guoli Qu, Anthony Parker

Proceedings Volume 3893, (1999) https://doi.org/10.1117/12.368448

KEYWORDS: Capacitance, Field effect transistors, Intermodulation, Amplifiers, Device simulation, Distortion, Performance modeling, Microwave radiation, Instrument modeling, Electronics

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Proceedings Article | 14 January 1998 Paper

Laser solder repair technique for nerve anastomosis: temperatures required for optimal tensile strength

Karen McNally-Heintzelman, Judith Dawes, Antonio Lauto, Anthony Parker, Earl Owen, James Piper

Proceedings Volume 3195, (1998) https://doi.org/10.1117/12.297913

KEYWORDS: Nerve, Laser welding, Proteins, Solids, Semiconductor lasers, Laser tissue interaction, Temperature metrology, Interfaces, Tissues, Radiometry

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Laser-assisted repair of nerves is often unsatisfactory and has a high failure rate. Two disadvantages of laser assisted procedures are low initial strength of the resulting anastomosis and thermal damage of tissue by laser heating. Temporary or permanent stay sutures are used and fluid solders have been proposed to increase the strength of the repair. These techniques, however, have their own disadvantages including foreign body reaction and difficulty of application. To address these problems solid protein solder strips have been developed for use in conjunction with a diode laser for nerve anastomosis. The protein helps to supplement the bond, especially in the acute healing phase up to five days post- operative. Indocyanine green dye is added to the protein solder to absorb a laser wavelength (approximately 800 nm) that is poorly absorbed by water and other bodily tissues. This reduces the collateral thermal damage typically associated with other laser techniques. An investigation of the feasibility of the laser-solder repair technique in terms of required laser irradiance, tensile strength of the repair, and solder and tissue temperature is reported here. The tensile strength of repaired nerves rose steadily with laser irradiance reaching a maximum of 105 plus or minus 10 N.cm^-2 at 12.7 W.cm^-2. When higher laser irradiances were used the tensile strength of the resulting bonds dropped. Histopathological analysis of the laser- soldered nerves, conducted immediately after surgery, showed the solder to have adhered well to the perineurial membrane, with minimal damage to the inner axons of the nerve. The maximum temperature reached at the solder surface and at the solder/nerve interface, measured using a non-contact fiber optic radiometer and thermocouple respectively, also rose steadily with laser irradiance. At 12.7 W.cm^-2, the temperatures reached at the surface and at the interface were 85 plus or minus 4 and 68 plus or minus 4 degrees Celsius respectively. This study demonstrates the feasibility of the laser-solder repair technique for nerve anastomosis resulting in improved tensile strength. The welding temperature required to achieve optimal tensile strength has been identified.

Showing 5 of 13 publications

Conference Committee Involvement (2)

Microelectronics: Design, Technology, and Packaging III

5 December 2007 | Canberra, ACT, Australia

Microelectronics: Design, Technology, and Packaging II

12 December 2005 | Brisbane, Australia

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