We report a 200 mm silicon photonic platform integrating a set of devices dedicated on HPC applications. PiN microring modulator layout and process are optimized together. Active tuning through heating section is investigated using either doped silicon or metal resistors. This technology is supported by a dedicated process design kit (PDK) compatible with conventional CMOS EDA tools. The PDK includes optical device models that will be described and compared with experimental results. A focus will be done on the PiN micro-ring modulator models which covering a wide range of geometries. DC mode and RF behaviors are supported.
With an ever-growing transmission data rate, electronic components reach a limit silicon photonics may overcome. This
technology provides integrated circuits in which light is generated within hybrid III-V/Si lasers and modulated to
transmit the desired information through silicon waveguides to input/output active/passive components such as
wavelength (de-)multiplexers, fiber couplers and photodetectors. Nevertheless, high aggregate bandwidth through
wavelength division multiplexing demands for spectrally narrowband lasers with high side-mode suppression ratio
(SMSR). Distributed feedback (DFB) lasers offer such a great selectivity. We report hybrid III-V on Silicon DFB lasers
emitting at 1550nm and 1310nm. The III-V material is wafer-bonded to patterned silicon-on-insulator (SOI) wafers. The
laser cavity is obtained by etching a grating in the silicon, while silicon adiabatic tapers are used to couple light from/to
III-V waveguides to/from the passive silicon circuitry, in order to maximize the laser available gain and output power.
Gratings are either etched on the top of the silicon waveguide or on its sides, thus relaxing the taper dimension
constraint. At 1550nm, the investigated device operates under continuous wave regime with a room temperature
threshold current of 70mA, an SMSR as high as 45dB and an optical power in the waveguide higher than 40mW. At
1310nm, a threshold current of 35mA, an SMSR of 45dB and an optical power coupled into a single-mode fiber higher
than 1.5mW are demonstrated.
The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.
Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.
We report on hybrid Si/III-V lasers with adiabatic coupling. The proposed architectures, based on adiabatic mode
transformers, allow laser mode to experience maximal gain available in the III-V region while maintaining a high
coupling efficiency (>95%) to Si-waveguides. Hybrid Fabry-Pérot laser and integrated racetrack laser, photodetector and
waveguide-to-fiber surface grating coupler are presented.