The experimental research initial disbalance potential collectors from the scheme of inclusion two-collector
lateral bipolar magnetotransistor (BMT) NPN-type, generated in a well is lead. By means of device-technological
modelling the mechanism of occurrence initial disbalance is investigated and the way of its reduction initial disbalance is
certain at maintenance of preservation of high sensitivity. The choice of the operating mode bipolar magnetotransistor is
based on the distributions of the emitter injected electron currents in two symmetrical base electrodes - two contacts to
the base-well, in two contacts to a substrate, in two collectors. The mode of magnetotransistor based on the influence of a
magnetic field. Reduction of initial disbalance allows to increase relative size of a output valid signal ΔU= UC1(B) -
UC2(B) - UC1(0) + UC2(0).
This paper presents a two-dimensional numerical analysis of planar power n-channel MOSFET structure with Schottky-barrier drain contact. A comparison in I-V characteristics between the Lateral Power MOSFET with Schottky-barrier drain contact and the conventional Lateral Power MOSFET with ohmic drain contact structures is given. The thyristor like I-V characteristics of the Lateral Power MOSFET with Schottky-barrier drain contact are found to be dependent of substrate contact location and neighboring cells interaction.