A series of Adamantanephenol derivatives was synthesized from adamantinetriphenol /
adamantinetrimethylhydroquinone and vinylether compound. Solubility for resist solvent or alkali developer of those
materials and thermal properties were examined. Adamantanetrimethylhydroquinone cross-linked with divinylether
(AmHQ-CL) had excellent properties as positive tone resist material. We evaluated lithographic properties of AmHQ-CL
with photo acid generator and base. Line and space pattern was formed with EB exposure followed with post exposure
bake and alkali development. Pattern of smooth wall surface was obtained by removing high molecular weight
component from AmHQ-CL. Line width roughness (LWR) of the pattern AnHQ-CL nMWD was less than 30 nm. It was very small value compared with that of traditional polymer resist.