The control of emission characteristics is of great importance as more specific wavelengths for applications are in
demand with respect to nitride materials. Detailed investigations have been carried out to understand the emission states in multi quantum wells (MQWs) of Indium Gallium Nitride and Single Quantum well Aluminum Gallium Nitride
structures using structural and optical investigations. The effect of growth parameters including the well thickness and the composition has been investigated and will be presented in detail.
In the present investigation, AlxGa1-xN/AlyGa1-yN/AlxGa1-xN double heterostructures have been grown
on sapphire substrate using MOCVD. The active layer Al0.18Ga0.82N thickness has been changed as 14.8 nm and 23.4
nm by keeping the thickness of the Al0.45Ga0.55N barrier layer as constant. It has been found that full width halfmaxium
(FWHM) of (002) undoped GaN without double heterostructures as 352 arc-secs where as for the double
heterostructures it is found to be 523 and 483 arc-sec for the active layer thickness of 14.8nm and 23.4nm
respectively. The photon decay time was found to be 125, 85 and 87 ps for undoped GaN, Al0.18Ga0.82N of thickness
14.8 nm and 23.4 nm respectively using Time Resolved Photoluminescence (TRPL).It has been observed that the
well width has no effect on the radiative decay time which has been reported for the first time.