The results presented in this paper demonstrate the possibility of using tin dioxide films as sensitive elements for alcohol sensors. The tin dioxide films were deposited by the spray pyrolysis method on alumina substrates as well as on n+ porous silicon upper layer of silicon diode structures. Room temperature, under atmospheric pressure measurements of the parameters of the obtained structures revealed their high sensitivity to the mixture of ethyl alcohol vapors and air. The optimum concentration of precursor solution for precipitation of tin dioxide films and technological regimes for the deposition of tin dioxide films and formation of a porous silicon layer with appropriate thickness and porosity by electrochemical anodization were found.
The possibility of using porous silicon layers as antireflection coating instead of the antireflection coatings in common silicon solar cells was investigated. A technology for the manufacture of porous silicon antireflection layers on the emitter of n+ - p junctions with the already deposited contacts grid was developed. The careful investigation of the photovoltaic and optical characteristics of solar cells with porous silicon antireflection coating compared with the performances of solar cells using a well known ZnS antireflection coating is presented. It is shown that the formation of the porous layer under optimum technological regimes leads to decrease of reflection and improvement of the main photovoltaic parameters - short-circuit current and open-circuit voltage. A means of determining the porous silicon layer thickness through capacitance measurements is suggested.