Design and development of novel monomers and copolymers for 193-nm lithography are described. At the present time, 193-nm lithography is required for 65-nm node and below. Novel monomers and copolymers are considered to be candidates for the development of higher performance resist materials. We focused our attention on pattern profile and line edge roughness. In design of novel monomers, molecular orbital calculation was adopted. It was revealed that CN-group has a higher potential than other polar groups. Novel monomers that contain CN-group were designed, synthesized and co-polymerized with traditional acrylate monomers. It is expected that these copolymers could be higher performance resist materials that could be used in 65-nm node and below.