This paper discusses a proposed DC-DC switched capacitor converter for low voltage electronic products. The proposed converter is a two-level power switched capacitor (PSC) which is a boost converter. The suitability to convert a voltage into four times higher than its input is one of the converter’s objectives. Because of the proposed two-level PSC consist of eight switches and five capacitors, it occupies a small area of the electronic products. The eight switches were selected to be GaN transistors to maintain the efficiency at high rated power or high temperatures. The LTSpice simulator was used to test the proposed model. Since the design contains semiconductor elements such (GaN transistor), then 10% error is a reasonable variance between the mathematical and simulation results.
In this paper, simulation and performance comparison of Si and SiC based interleaved boost converter is presented. Wide bandgap devices such as silicon carbide and gallium nitride are desirable and recommended in high-power applications because of their capability of operating under high temperature, high switching frequency, and high voltage with reduced switching losses. The main advantage of using SiC materials is the ability to raise the switching frequency which will reduce the size. However, their cost is high compared to Si. In this paper, 60V input voltage is used to get 120V output voltage under 100 KHz switching frequency and 0.5 duty cycle. With the help of LTSpice software, an efficiency comparison between silicon and silicon carbide by considering interleaved boost converter are simulated and studied.
This paper discusses a DC-DC multilevel boost with wide bandgap components for PV applications. In the PV system,
the multilevel boost converter is advisable to be used over the conventional boost converter because of the high ratio
conversion. The multilevel boost converter is designed with one inductor, 2N-1 silicon carbide (SiC) schottky diodes,
2N-1 capacitors and one SiC MOSFET where N is the number of levels. Inserting SiC components in the design helps to
maintain the temperature effect that could cause a high power loss. Most function of using a multilevel boost converter is
to produce a high output voltage without using either a power transformer or a coupled inductor. Achieving a high gain
output in the multilevel boost converter depends on the level of the converter and the switching duty cycle. The
demonstrated design is a multilevel boost converter supplies from 220 V to rate 2 KW power. The switching frequency
is 100 KHz and the output voltage of 4-level is 3.5 KV. Several values of temperatures are applicable to the system and
the effect of changing the temperature on efficiency is studied. The developed design is simulated by using a LTspice
software and the results are discussed.
In this paper, DC-DC multilevel cuk converter using silicon carbide (SiC) Components is presented. Cuk converter gives
output voltage with negative polarity. This topology is useful for applications require high gain with limitation on duty
cycle. The gain of the design can be enhanced by increasing the number of multiplier level (N). This relation between
the gain and the number of levels is the major advantage of this multilevel cuk converter. In the proposed cuk converter,
a single SiC MOSFET, 2N-1 SiC schottky diodes, 2N capacitors, 2 inductors, and single input voltage are used to supply
a load with negative polarity. 300V input voltage, 50KHz switching frequency, and 75% duty cycle are the main
parameters used in the design. The output parameters are 3KW power and -5.7 KV voltage. Because this design can be
used in applications which temperature plays a critical role, the relation between increasing temperature and output
voltage and power are tested. The design is simulated using LTspice software and the results are discussed.