Intense Cathodoluminescence (CL) emission is obtained for Electron Modified Porous Silicon films when excited with electron beams of kinetic energies below 2KeV, supporting the applicability of such material as light emitter in field emission display devices. Porous Silicon films were irradiated with an electron beam producing a collapsed nanostructure of reduced porosity. The CL intensity from the excited pixels made of such material reduced in less than
10% during a continuous burning of 10 hours. The CL spectra of the films correlate with its photoluminescence showing that the origin of the CL is the quantum confinement effect in the silicon nanoparticles. In situ SIMS analyses before and after prolonged e-beam excitation, as well as of the electron-eroded material from the sample, showed minor compositional changes of the film and reduced sputtering of the silicon nanoparticles due to the electron irradiation. In situ bombardment of the porous material with Hydrogen beams induced changes on the surface passivation of the
nanoparticles through which we were able to maximize the CL of the films.