Prof. B. M. Arora Profile

Prof. B. M. Arora

at Tata Institute of Fundamental

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 15 December 2005 Paper

Effect of facet reflectivities on high-power highly strained InGaAs quantum-well diode lasers operating at 1.2μm

C. J. Panchal, V. A. Kheraj, K. M. Patel, P. K. Patel, B. M. Arora, T. K. Sharma

Proceedings Volume 6028, 602805 (2005) https://doi.org/10.1117/12.667119

KEYWORDS: Semiconductor lasers, Reflectivity, Antireflective coatings, Indium gallium arsenide, Aluminum, Reflection, Refractive index, Optical coatings, Thin film coatings, Optical simulations

Read Abstract +

Proceedings Article | 19 November 2003 Paper

Facet coating of diode laser for high-power and high-reliable operation

C. Panchal, S. Mistry, K. Patel, B. Arora

Proceedings Volume 4829, (2003) https://doi.org/10.1117/12.523846

KEYWORDS: Coating, Semiconductor lasers, Refractive index, Silicon, Antireflective coatings, High power lasers, Reflectivity, Multilayers, Magnesium fluoride, Gallium arsenide

Read Abstract +

Proceedings Article | 2 January 1998 Paper

Synthesis of high-quality InGaAs/InGaAsP/InP quantum well structures by metlorganic vapor phase epitaxy

B. Arora, M. Gokhale, A. Shah, K. Chandrasekharan

Proceedings Volume 3211, (1998) https://doi.org/10.1117/12.345357

KEYWORDS: Quantum wells, Vapor phase epitaxy, Indium gallium arsenide, Arsenic, Solids, Phosphorus, Luminescence, Switching, Gallium, Interfaces

Read Abstract +

Proceedings Article | 16 December 1992 Paper

Liquid phase epitaxial growth and characterization of III-V compound semiconductors

B. Arora

Proceedings Volume 1622, (1992) https://doi.org/10.1117/12.637279

KEYWORDS: Liquid phase epitaxy, Gallium arsenide, Tin, Gallium, Chemical elements, Heterojunctions, Germanium, Quantum wells, Liquids, Compound semiconductors

Read Abstract +

Proceedings Article | 16 December 1992 Paper

Polarization characteristics of quantum well lasers

Amit Bandyopadhyay, Atul Srivastava, Sudeep Banerjee, B. Arora

Proceedings Volume 1622, (1992) https://doi.org/10.1117/12.636925

KEYWORDS: Quantum wells, Polarization, Laser damage threshold, Magnetism, Ocean optics, Quantum optics, Laser optics, Luminescence, Gold, Measurement devices

Read Abstract +

Proceedings Article | 16 December 1992 Paper

High-gain GaAs MSM photodetector

V. Karulkar, S. Purandare, Atul Srivastava, B. Arora

Proceedings Volume 1622, (1992) https://doi.org/10.1117/12.636986

KEYWORDS: Gallium arsenide, Photodetectors, Metals, Semiconductors, Ionization, Quantum efficiency, Photodiodes, Capacitance, Solids, Near infrared

Read Abstract +

Proceedings Article | 1 February 1991 Paper

Use of admittance spectroscopy to probe the DX-centers in AlGaAs

S. Subramanian, S. Chakravarty, S. Anand, B. Arora

Proceedings Volume 1362, (1991) https://doi.org/10.1117/12.24543

KEYWORDS: Capacitance, Spectroscopy, Optoelectronic devices, Chemical species, Diodes, Silicon, Simulation of CCA and DLA aggregates, Tin, Physics, Temperature metrology

Read Abstract +

Showing 5 of 7 publications

Proceedings Volume Editor (1)

SPIE Conference Volume | 16 December 1992

Emerging Optoelectronic Technologies

Conference Committee Involvement (1)

Emerging Optoelectronic Technologies

17 December 1991 | Bangalore, India

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years