The results of study of the current oscillations in Ag3In5Se9 stimulated by electric field and IR-irradiation have been
presented. Depending on intensity and wavelengths of IR-irradiation, intensity of the electric field and temperature current
oscillations in a range of frequencies 0,8 ÷ 200 Hz are observed. The revealed features of the current oscillations stimulated
in Ag3In5Se9 single crystals by an electric field and the IR-irradiation are explained on the basis of three-level system in the
consent with which field dependence of the capture cross-section for charge carriers on local levels stimulates intrinsic
photoconductivity at excitation of the sample by IR-irradiation in the range 1,12 ÷ 1.2 μm and 1,56 ÷ 1,75 μm.
The effect of an annealing at 100-110 °C on contact resistance (rk) and adhesive strength of the contacts to Pb1-xMnxTe/
(In-Ag-Au) structure in the temperature range ~77-300K have been investigated. It is found out that the effect of an
annealing on rk is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the
formation of an intermediate phases such as Ag2Te.
It have been designed, manufactured and tested the photodetectors for a spectral region 3÷5 μm (IFE-1) and 10÷12μm (IFE-2) with a built-in thermoelectric coolers (TEC). The testing have shown, that the photodetectors are inconvertible against vibration in a frequency band from 10 up to 2500 Hz at acceleration up to 10 g, repeated shocks at a loading up to 15 g and duration of a shock impulse from 1 up to 5 μs (total number of shocks 12000), single chock at peak acceleration 100 g and pulse length 0,1-2 μs (total number of shocks -9). In addition carried out(spent) test on action of linear (longitudinal) acceleration up to 100 g at duration of action not less 10 s was carried on. After realization of tests any damages of a sensitive element and commutation systems, as well as all device as a whole were not observed.