Dr. Bart Laenens Profile

Dr. Bart Laenens

at ASML

SPIE Involvement:

Author

Websites:

Company Website

Publications (14)

Proceedings Article | 28 April 2017 Presentation

CD-SEM metrology and OPC modeling for 2D patterning in advanced technology nodes (Conference Presentation)

Thomas Wallow, Chen Zhang, Anita Fumar-Pici, Jun Chen, Bart Laenens, Christopher Spence, David Rio, Paul van Adrichem, Harm Dillen, Jing Wang, Peng-Cheng Yang, Werner Gillijns, Patrick Jaenen, Frieda van Roey, Jeroen van de Kerkhove, Sergey Babin

Proceedings Volume 10145, 101451Q (2017) https://doi.org/10.1117/12.2260443

KEYWORDS: Metrology, Optical proximity correction, Data modeling, Optical lithography, Signal to noise ratio, OLE for process control, Instrument modeling, Image analysis, Calibration, Metals

Read Abstract +

In the course of assessing OPC compact modeling capabilities and future requirements, we chose to investigate the interface between CD-SEM metrology methods and OPC modeling in some detail. Two linked observations motivated our study: 1) OPC modeling is, in principle, agnostic of metrology methods and best practice implementation. 2) Metrology teams across the industry use a wide variety of equipment, hardware settings, and image/data analysis methods to generate the large volumes of CD-SEM measurement data that are required for OPC in advanced technology nodes. Initial analyses led to the conclusion that many independent best practice metrology choices based on systematic study as well as accumulated institutional knowledge and experience can be reasonably made. Furthermore, these choices can result in substantial variations in measurement of otherwise identical model calibration and verification patterns. We will describe several experimental 2D test cases (i.e., metal, via/cut layers) that examine how systematic changes in metrology practice impact both the metrology data itself and the resulting full chip compact model behavior. Assessment of specific methodology choices will include: • CD-SEM hardware configurations and settings: these may range from SEM beam conditions (voltage, current, etc.,) to magnification, to frame integration optimizations that balance signal-to-noise vs. resist damage. • Image and measurement optimization: these may include choice of smoothing filters for noise suppression, threshold settings, etc. • Pattern measurement methodologies: these may include sampling strategies, CD- and contour- based approaches, and various strategies to optimize the measurement of complex 2D shapes. In addition, we will present conceptual frameworks and experimental methods that allow practitioners of OPC metrology to assess impacts of metrology best practice choices on model behavior. Finally, we will also assess requirements posed by node scaling on OPC model accuracy, and evaluate potential consequences for CD-SEM metrology capabilities and practices.

Proceedings Article | 25 March 2016 Paper

Design-based metrology: beyond CD/EPE metrics to evaluate printability performance

Sandip Halder, Julien Mailfert, Philippe Leray, David Rio, Yi-Hsing Peng, Bart Laenens

Proceedings Volume 9778, 97780W (2016) https://doi.org/10.1117/12.2221894

KEYWORDS: Metrology, Scanning electron microscopy, Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Logic, Image processing, Process control, Electron microscopes, Tolerancing, Distance measurement, Lithography, Finite element methods, Calibration

Read Abstract +

Proceedings Article | 18 March 2016 Paper

Assist features: placement, impact, and relevance for EUV imaging

Iacopo Mochi, Vicky Philipsen, Emily Gallagher, Eric Hendrickx, Kateryna Lyakhova, Friso Wittebrood, Guido Schiffelers, Timon Fliervoet, Shibing Wang, Stephen Hsu, Vince Plachecki, Stan Baron, Bart Laenens

Proceedings Volume 9776, 97761S (2016) https://doi.org/10.1117/12.2220025

KEYWORDS: Neodymium, Photomasks, Semiconducting wafers, Extreme ultraviolet, Image processing, Lithography, Lithographic illumination, Extreme ultraviolet lithography, Optical proximity correction, Atrial fibrillation, Reticles, Printing, Deep ultraviolet

Read Abstract +

Proceedings Article | 28 March 2014 Paper

Influence of litho patterning on DSA placement errors

Sander Wuister, Tamara Druzhinina, Davide Ambesi, Bart Laenens, Linda He Yi, Jo Finders

Proceedings Volume 9049, 90491O (2014) https://doi.org/10.1117/12.2048065

KEYWORDS: Extreme ultraviolet, Neodymium, Lithography, Neck, Polymethylmethacrylate, Optical lithography, Polymers, Scanning electron microscopy, Error analysis, Directed self assembly

Read Abstract +

Proceedings Article | 14 October 2011 Paper

A new source optimization approach for 2X node logic

Kazuya Iwase, Peter De Bisschop, Bart Laenens, Zhipan Li, Keith Gronlund, Paul van Adrichem, Stephen Hsu

Proceedings Volume 8166, 81662A (2011) https://doi.org/10.1117/12.898749

KEYWORDS: SRAF, Photomasks, Logic, Source mask optimization, Critical dimension metrology, Double patterning technology, Resolution enhancement technologies, Molybdenum, Surface plasmons, Model-based design

Read Abstract +

Proceedings Article | 23 March 2011 Paper

Optical proximity stability control of ArF immersion clusters

Lieve Van Look, Joost Bekaert, Koen D'havé, Bart Laenens, Geert Vandenberghe, Shaunee Cheng, Koen Schreel, Jan-Willem Gemmink

Proceedings Volume 7973, 79730R (2011) https://doi.org/10.1117/12.881606

KEYWORDS: Semiconducting wafers, Scanners, Fiber optic illuminators, Critical dimension metrology, Scatterometry, Diffractive optical elements, Scanning electron microscopy, Wafer-level optics, Photomasks, Control systems

Read Abstract +

Proceedings Article | 23 March 2011 Paper

Scanner matching for standard and freeform illumination shapes using FlexRay

J. Bekaert, L. Van Look, K. D'havé, B. Laenens, G. Vandenberghe, P. van Adrichem, W. Shao, J. Ghan, K. Schreel, J. T. Neumann

Proceedings Volume 7973, 79731I (2011) https://doi.org/10.1117/12.881607

KEYWORDS: Scanners, Fiber optic illuminators, Semiconducting wafers, Photomasks, Reticles, Diffractive optical elements, Cadmium, Critical dimension metrology, Manufacturing, Optical lithography

Read Abstract +

Proceedings Article | 23 March 2011 Paper

Joint optimization of layout and litho for SRAM and logic towards the 20nm node using 193i

Peter De Bisschop, Bart Laenens, Kazuya Iwase, Teruyoshi Yao, Mircea Dusa, Michael Smayling

Proceedings Volume 7973, 79730B (2011) https://doi.org/10.1117/12.881688

KEYWORDS: Logic, Lithium, Source mask optimization, Optical lithography, Double patterning technology, Surface plasmons, Transistors, Photovoltaics, Photomasks, Semiconducting wafers

Read Abstract +

SPIE Journal Paper | 1 January 2011

Experimental verification of source-mask optimization and freeform illumination for 22-nm node static random access memory cells

Joost Bekaert, Bart Laenens, Staf Verhaegen, Lieve Van Look, Darko Trivkovic, Frederic Lazzarino, Geert Vandenberghe, Paul van Adrichem, Robert Socha, Stephen Hsu, Hua-yu Liu, Orion Mouraille, Koen Schreel, Mircea Dusa, Jörg Zimmermann, Paul Gräupner, Jens Neumann

JM3, Vol. 10, Issue 1, 013008, (January 2011) https://doi.org/10.1117/12.10.1117/1.3541778

KEYWORDS: Source mask optimization, Photomasks, Diffractive optical elements, Semiconducting wafers, Scanners, Manufacturing, Double patterning technology, Fiber optic illuminators, Optical lithography, Lithographic illumination

Read Abstract +

SPIE Journal Paper | 1 January 2011

Pellicle contribution to optical proximity and critical dimension uniformity for 1.35 numerical aperture immersion ArF lithography

Lieve Van Look, Joost Bekaert, Bart Laenens, Geert Vandenberghe, Jan Richter, Karsten Bubke, Jan Hendrik Peters, Koen Schreel, Mircea Dusa

JM3, Vol. 10, Issue 1, 013009, (January 2011) https://doi.org/10.1117/12.10.1117/1.3541779

KEYWORDS: Pellicles, Semiconducting wafers, Critical dimension metrology, Reticles, Apodization, Lithography, Photomasks, Transmittance, Optical proximity correction, Phase shifts

Read Abstract +

Proceedings Article | 22 March 2010 Paper

Litho and patterning challenges for memory and logic applications at the 22-nm node

Jo Finders, Mircea Dusa, Peter Nikolsky, Youri van Dommelen, Robert Watso, Tom Vandeweyer, Joost Beckaert, Bart Laenens, Lieve Van Look

Proceedings Volume 7640, 76400C (2010) https://doi.org/10.1117/12.848330

KEYWORDS: Metals, Logic, Tolerancing, Optical lithography, Semiconducting wafers, Reticles, Double patterning technology, Photomasks, Critical dimension metrology, Lithography

Read Abstract +

Proceedings Article | 11 March 2010 Paper

Joint-optimization for SRAM and logic for 28nm node and below

Staf Verhaegen, Michael Smayling, Peter De Bisschop, Bart Laenens

Proceedings Volume 7641, 764107 (2010) https://doi.org/10.1117/12.846595

KEYWORDS: Logic, Lithography, Optical lithography, Double patterning technology, Electroluminescence, Fiber optic illuminators, Transistors, Photomasks, Source mask optimization, Lithium

Read Abstract +

Proceedings Article | 4 March 2010 Paper

Freeform illumination sources: an experimental study of source-mask optimization for 22-nm SRAM cells

J. Bekaert, B. Laenens, S. Verhaegen, L. Van Look, D. Trivkovic, F. Lazzarino, G. Vandenberghe, P. van Adrichem, R. Socha, S. Baron, M. C. Tsai, K. Ning, S. Hsu, H. Y. Liu, M. Mulder, A. Bouma, E. van der Heijden, O. Mouraille, K. Schreel, J. Finders, M. Dusa, J. Zimmermann, P. Gräupner, J. T. Neumann, C. Hennerkes

Proceedings Volume 7640, 764008 (2010) https://doi.org/10.1117/12.846918

KEYWORDS: Source mask optimization, Photomasks, Semiconducting wafers, Diffractive optical elements, Manufacturing, Double patterning technology, Scanners, Electroluminescence, Fiber optic illuminators, Optical lithography

Read Abstract +

Proceedings Article | 4 March 2010 Paper

Experimental study of effect of pellicle on optical proximity fingerprint for 1.35 NA immersion ArF lithography

Lieve Van Look, Joost Bekaert, Bart Laenens, Geert Vandenberghe, Jan Richter, Karsten Bubke, Jan Hendrik Peters, Koen Schreel, Mircea Dusa

Proceedings Volume 7640, 76401Y (2010) https://doi.org/10.1117/12.848219

KEYWORDS: Pellicles, Semiconducting wafers, Reticles, Lithography, Apodization, Photomasks, Transmittance, Optical proximity correction, Phase shifts, Solids

Read Abstract +

Showing 5 of 14 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years