In this paper we show an approach to couple two stochastic processes to describe the dynamics of independent carriers in
semiconductor devices: the launch time of carriers from the contacts is described by independent Poisson launch
processes, and the stochastic motion of carriers due to scattering inside the device is described by inhomogeneous
Poisson type Markov processes according to the semiclassical transport theory. The coupling of the Poisson type
stochastic launch process to the semiclassical dynamics will be shown, and the resulting Ohmic contact boundary
conditions will be derived. For proof of concept, an expression for the autocovariance for terminal current noise for one
point contact will be shown which can be easily extended to a real semiconductor device with multiple contacts.
Without relying on the cumbersome liquid Nitrogen coolant, necessary for the conventional mid IR (3~5 μm wavelength) cameras, we designed a new mid wave IR camera, according to biomimetic human vision 2 color receptor system. We suspended over the non-cryogenic long wave IR (HgCdTe) CCD backplane with Single Wall Carbon NanoTubes (SWNT) pixels, which have the band gap energy εBG ~1/d tuned at the few nanometer diameter d for the mid wave. To ascertain noise contribution, in this paper, we provided a simple derivation of frequency-dependent Einstein transport coefficient D(k) = PSD(k), based on Kubo-Green (KG) formula, which is convenient to accommodate experimental data. We conjectured a concave shape of convergence 1/kα at α=-2 power law at optical frequency against the overly simplest 1-D noise model about 1/2 KBT, and the ubiquitous power law 1/kα where α=1 gave a convex shape of divergence. Our formula is based on the Cauchy distribution [1+(kd)2]-1 derived from the Fourier Transform of the correlation of charge-carrier wave function been scattered against lattice phonons spreading over the tubular surface of the diameter d, similar to the Lorentzian line shape in molecular spectral exp(-|x|/d). According to the band gap formula of SWNT, a narrower tube of SWNT worked similarly as Field Emission Transistor (FET) can be tuned at higher optical frequencies revealing finer details of lattice spacing, a and b. Experimental determination of our proposed multiple scales responses formula remained to be confirmed.