Dr. Benedicte P. Mortini Profile

Dr. Benedicte P. Mortini

at STMicroelectronics

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Author

Publications (17)

Proceedings Article | 26 March 2019 Presentation + Paper

Grayscale lithography process study for sub 5µm microlens patterns

Nacima Allouti, Pierre Chevalier, Sébastien Bérard-Bergery, Valérie Rousset, Benedicte Mortini, Patrick Quéméré, Florian Tomaso, Rémi Coquand

Proceedings Volume 10958, 1095809 (2019) https://doi.org/10.1117/12.2514712

KEYWORDS: Microlens, Photomasks, Grayscale lithography, Chromium, Lithography, Photoresist processing, Annealing, Oxygen, Optical lithography, Atomic force microscopy

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The advance in microlithography has greatly helped the development of micro optical elements. Large array of microlenses can now be fabricated in the same fashion as manufacturing of integrated circuit at low cost and high yield [1-2].
Because microlens array requires well-defined and continuous surface relief profile, special methods are needed to supplement the normal microlithography to produce those spherical structures [3]. Various techniques have been developed, and the most widely used is multi-step photolithography with thermal resist reflow. However, the alternative grayscale photolithography technique appears to be the one as the most flexible and versatile method [4].
Indeed, this approach is a one-level lithography process enabling the development of 3D profiles in a photoresist masking layer. In addition, with the need to maintain or improve image quality at an ever-smaller pixel size, grayscale technic can offer one way to compensate the loss of the photosensitive area by achieving zero-gap microlens. One other advantage of grayscale is the possibility to have, from a single lithography, objects of different shapes, but also at the same time of different sizes (especially heights); which is possible with classical lithography only by doing multi-patterning.
There are several options for performing grayscale lithography, for example the HEBS mask (high energy beam sensitive) which darkens under exposure to electrons. The option that has been chosen is to use a grayscale reticle, with varying chromium features densities that locally modulate the intensity of transmitted UV light. Being non-uniformly exposed, this allows the creation of a relief structure in the resist layer after development. The resist height after development depends on the intensity of the incident light, the exposure time and the contrast of the resist. So contrary to conventional lithography where the goal is to achieve straight resist pattern profiles, grayscale lithography enables the realization of progressive profiles, which requires smooth resist contrast curve. The other specificity of these resists is that they must crosslink without flowing.
In this paper, we evaluate resists from different suppliers to generate microlenses smaller than 5μm via a grayscale mask. The study consists in establishing the contrast curves of these resists according to different process parameters, giving the designer great control of grayscale levels that can be achieved for a given resist. Then, pattern various microlenses shapes in these resists to evaluate the residual resist thickness according to the gray levels. With the final objective of establishing a relationship between these contrast curves and the profile variations at the microlens level to compute a suitable and accurate grayscale mask [5].

Proceedings Article | 30 March 2010 Paper

Grayscale lithography process study applied to zero-gap microlenses for sub-2μm CMOS image sensors

S. Audran, J. Vaillant, V. Farys, F. Hirigoyen, E. Huss, B. Mortini, C. Cowache, L. Berthier, E. Mortini, J. Fantuz, O. Arnaud, L. Depoyan, F. Sundermann, C. Baron, J.-P. Reynard

Proceedings Volume 7639, 763910 (2010) https://doi.org/10.1117/12.846507

KEYWORDS: Microlens, Photomasks, Calibration, Spherical lenses, Atomic force microscopy, Grayscale lithography, Image processing, Photoresist processing, Photoresist materials, Diffusion

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Proceedings Article | 15 April 2008 Paper

Impact of HBr and Ar cure plasma treatments on 193nm photoresists

Arnaud Bazin, Erwine Pargon, Xavier Mellhaoui, Damien Perret, Bénédicte Mortini, Olivier Joubert

Proceedings Volume 6923, 692337 (2008) https://doi.org/10.1117/12.772573

KEYWORDS: Plasma treatment, Etching, Argon, Resistance, Photoresist materials, Plasma, Polymers, FT-IR spectroscopy, Photoresist processing, Ellipsometry

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Since they have been introduced to substitute poly(hydroxystyrene) based 248nm photoresists (PR), 193nm photoresists based on acrylate chemistry have raised issues regarding their dry etch resistance. These resists undergo severe degradations during typical dry etch processes involved in gate patterning, resulting in strong film loss, resist chemical modifications, critical surface roughening and also linewidth roughness (LWR). Other studies have shown that applying plasma treatments to 193nm photoresist patterns prior to the other plasma etching processes is a way to minimize PR degradation. Among these plasma treatments, the HBr plasma cure is known to reinforce the 193nm photoresist etch resistance and to reduce the resist LWR. In this study, we propose to go further in the understanding of cure plasma treatments impact on a 193nm model resist polymer (from Rohm & Haas Electronic Materials) using real time in-situ ellipsometry experiments correlated to several characterization techniques such as in-situ X-Ray Photoelectrons Spectroscopy (XPS), Fourier Transformed Infrared Spectroscopy (FTIR) and Dynamic Mechanical Analysis (DMA). The impact of Ar and HBr cure plasma treatments on 193nm PR is investigated and compared. Both treatments lead to surface and also bulk modifications of the resist films. XPS analyses show that the 10 first nanometers of the resist film are graphitized after only 20s plasma treatment, resulting in a higher carbon content and therefore indicating a better etch resistance following the Ohnishi parameter. Besides this superficial modification, FTIR show that the resist film can be completely modified after HBr cure plasma treatment with the removal of lactone and leaving groups present in the polymer. The same kinds of modifications are observed with Ar cure plasma treatment but only the first 80nm of the resist film are chemically modified. A significant decrease of the glass transition temperature is also observed with both treatments and is related to lactone and leaving group units that remain in the film Finally, we show that the resist etch resistance is indeed improved if the resist is previously cured. However, in the case of Ar plasma treatment, the etch resistance is only improved while etching the first 80nm chemically modified resist.

Proceedings Article | 16 May 2007 Paper

Mechanical dynamical analysis of ultra thin resist films for microlithography applications

C. Petitdidier, R. Tiron, S. Derrough, C. Sourd, L. Koscianski, B. Mortini

Proceedings Volume 6591, 65910I (2007) https://doi.org/10.1117/12.724202

KEYWORDS: Glasses, Polymethylmethacrylate, Polymers, Temperature metrology, Thin films, Lithography, Silicon films, Polymer thin films, Silicon, Microelectronics

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Proceedings Article | 3 May 2007 Paper

Resist and BARC outgassing measured by TD-GCMS: investigation during the exposure or the bake steps of the lithographic process

Raluca Tiron, Claire Sourd, Hervé Fontaine, Sylviane Cetre, Bénédicte Mortini

Proceedings Volume 6533, 65331E (2007) https://doi.org/10.1117/12.736532

KEYWORDS: Lithography, FT-IR spectroscopy, Polymers, Photoresist processing, Spectroscopy, Semiconducting wafers, Contamination, Quartz, Helium, Chemical analysis

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Proceedings Article | 12 April 2007 Paper

Study of 193nm resist degradation under various etch chemistries

Arnaud Bazin, Michael May, Erwine Pargon, Benedicte Mortini, Olivier Joubert

Proceedings Volume 6519, 65192N (2007) https://doi.org/10.1117/12.711415

KEYWORDS: Etching, Polymers, Plasma, Chemical analysis, Chemistry, FT-IR spectroscopy, Photoresist materials, Resistance, Dry etching, Argon

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Proceedings Article | 2 April 2007 Paper

Resist evaluation for contact hole patterning with thermal flow process

R. Tiron, C. Petitdidier, C. Sourd, D. De Simone, G. Cotti, E. Annoni, B. Mortini

Proceedings Volume 6519, 65193A (2007) https://doi.org/10.1117/12.711678

KEYWORDS: Photoresist processing, Temperature metrology, Critical dimension metrology, Polymers, Glasses, Lithography, Optical lithography, Signal attenuation, Resist chemistry, Chemical analysis

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Proceedings Article | 29 March 2006 Paper

Evaluating resist degradation during reactive ion oxide etching using 193 nm model resist formulations

M. May, B. Mortini, C. Sourd, D. Perret, D. Chung, G. Barclay, C. Brochon, G. Hadziioannou

Proceedings Volume 6153, 61530P (2006) https://doi.org/10.1117/12.656397

KEYWORDS: Etching, Polymers, Oxides, Reactive ion etching, FT-IR spectroscopy, Plasma etching, Ions, Resistance, Chemical analysis, Plasma

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Proceedings Article | 29 March 2006 Paper

Study of dynamical formation and shape of microlenses formed by the reflow method

S. Audran, B. Faure, B. Mortini, C. Aumont, R. Tiron, C. Zinck, Y. Sanchez, C. Fellous, J. Regolini, J. Reynard, G. Schlatter, G. Hadziioannou

Proceedings Volume 6153, 61534D (2006) https://doi.org/10.1117/12.656371

KEYWORDS: Microlens, Polymers, Spherical lenses, Atomic force microscopy, Plasma treatment, Photoresist materials, Modeling, Photoresist processing, Semiconducting wafers, Temperature metrology

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Proceedings Article | 12 June 2003 Paper

Investigation of 193-nm resist and plasma interactions during an oxide etching process

Benedicte Mortini, Philippe Spinelli, Francois Leverd, Veronique Dejonghe, Richard Braspenning

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485128

KEYWORDS: Etching, Oxides, Plasma, Photoresist processing, Resistance, Polymers, Semiconducting wafers, Temperature metrology, FT-IR spectroscopy, Lithography

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Proceedings Article | 24 July 2002 Paper

Investigation of lithographic performance for 120-nm and sub-120-nm gate applications of advanced ArF resists based on VEMA co-polymers

Robert Kavanagh, George Orsula, Marie Hellion, George Barclay, Stefan Caporale, Nick Pugliano, James Thackeray, Benedicte Mortini

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474212

KEYWORDS: Polymers, Lithography, Line edge roughness, Prototyping, Logic, Data modeling, Manufacturing, Etching, Photoresist processing, Photoresist materials

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Proceedings Article | 23 June 2000 Paper

Minimization of the iso-dense bias in chemically amplified 193-nm positive resists: influence and monitoring of the diffusion well

Benedicte Mortini, Severine Gally, Pierre-Olivier Sassoulas, Alain Prola, Patrick Paniez

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388352

KEYWORDS: Diffusion, Photoresist processing, Temperature metrology, Glasses, Polymers, Lithography, Image processing, Control systems, Dielectrics, Catalysis

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Proceedings Article | 11 June 1999 Paper

Thermal phenomena in acrylic 193-nm resists

Patrick Paniez, Severine Gally, Benedicte Mortini, Charles Rosilio, Pierre-Olivier Sassoulas, Ralph Dammel, Munirathna Padmanaban, Axel Klauck-Jacobs, Joseph Oberlander

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350189

KEYWORDS: Glasses, Polymers, Photoresist materials, Annealing, Temperature metrology, Dielectrics, Photoresist processing, Modulation, Convolution, Statistical analysis

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Proceedings Article | 11 June 1999 Paper

Physico-chemical properties of polymers for 193-nm lithography incorporating alicyclic norbornene-alt-maleic anhydride structures

Patrick Paniez, Franck Perrier, Benedicte Mortini, Severine Gally, Pierre-Olivier Sassoulas, Charles Rosilio

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350186

KEYWORDS: Polymers, Lithography, Diffusion, Temperature metrology, Dielectrics, Signal detection, Switches, Hydrogen, Modulation, Photoresist processing

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Proceedings Article | 28 April 1999 Paper

Understanding advanced lithographic materials: challenges and new characterization techniques

Patrick Paniez, Benedicte Mortini, Severine Gally, Alain Prola, Charles Rosilio, Pierre-Olivier Sassoulas

Proceedings Volume 3741, (1999) https://doi.org/10.1117/12.346879

KEYWORDS: Diffusion, Lithography, Polymers, Photoresist processing, Dielectrics, Process control, Molecules, Ellipsometry, Chemical analysis, Modulation

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Proceedings Article | 29 June 1998 Paper

Study of bake mechanisms by real-time in-situ ellipsometry

Patrick Paniez, Aime Vareille, Patrice Ballet, Benedicte Mortini

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312418

KEYWORDS: Polymers, Ellipsometry, Polymer thin films, Deep ultraviolet, Polymethylmethacrylate, Polarization, Modulation, Data modeling, Ultraviolet radiation, Superposition

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Proceedings Article | 29 June 1998 Paper

Processing of acrylate-based 193-nm resists: influence of physico-chemical properties

Benedicte Mortini, Charles Rosilio, Alain Prola, Patrick Paniez

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312406

KEYWORDS: Polymers, Ellipsometry, Annealing, Polymerization, FT-IR spectroscopy, Photoresist processing, Temperature metrology, Scanning electron microscopy, Microelectronics, Lithography

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Showing 5 of 17 publications

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