Dr. Benjamen M. Rathsack Profile

Dr. Benjamen M. Rathsack

VP at Tokyo Electron America Inc

SPIE Involvement:

Author

Publications (28)

Proceedings Article | 20 March 2015 Paper

Paper

Driving DSA into volume manufacturing

Mark Somervell, Takashi Yamauchi, Soichiro Okada, Tadatoshi Tomita, Takanori Nishi, Shinichiro Kawakami, Makoto Muramatsu, Etsuo Iijima, Vinayak Rastogi, Takeo Nakano, Fumiko Iwao, Seiji Nagahara, Hiroyuki Iwaki, Makiko Dojun, Koichi Yatsuda, Toshikatsu Tobana, Ainhoa Romo Negreira, Doni Parnell, Benjamen Rathsack, Kathleen Nafus, Jean-Luc Peyre, Takahiro Kitano

Proceedings Volume 9425, 94250Q (2015) https://doi.org/10.1117/12.2085776

KEYWORDS: Etching, Semiconducting wafers, Optical lithography, Polymethylmethacrylate, Line edge roughness, Manufacturing, Image processing, Ecosystems, Line width roughness, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Physical verification and manufacturing of contact/via layers using grapho-epitaxy DSA processes

J. Andres Torres, Kyohei Sakajiri, David Fryer, Yuri Granik, Yuansheng Ma, Polina Krasnova, Germain Fenger, Seiji Nagahara, Shinichiro Kawakami, Benjamen Rathsack, Gurdaman Khaira, Juan de Pablo, Julien Ryckaert

Proceedings Volume 9053, 90530R (2014) https://doi.org/10.1117/12.2045328

KEYWORDS: Monte Carlo methods, Manufacturing, Lithography, Metals, Photomasks, Optical lithography, Directed self assembly, Visualization, Polymers, Design for manufacturability

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Proceedings Article | 27 March 2014 Paper

Paper

High-volume manufacturing equipment and processing for directed self-assembly applications

Mark Somervell, Takashi Yamauchi, Soichiro Okada, Tadatoshi Tomita, Takanori Nishi, Etsuo Iijima, Takeo Nakano, Takumi Ishiguro, Seiji Nagahara, Hiroyuki Iwaki, Makiko Dojun, Mariko Ozawa, Koichi Yatsuda, Toshikatsu Tobana, Ainhoa Romo Negreira, Doni Parnell, Shinchiro Kawakami, Makoto Muramatsu, Benjamen Rathsack, Kathleen Nafus, Jean-Luc Peyre, Takahiro Kitano

Proceedings Volume 9051, 90510N (2014) https://doi.org/10.1117/12.2045975

KEYWORDS: Semiconducting wafers, Etching, Polymethylmethacrylate, Thin film coatings, High volume manufacturing, Ecosystems, Lithography, Manufacturing, Manufacturing equipment, Directed self assembly

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Proceedings Article | 18 April 2013 Paper

Paper

DSA hole defectivity analysis using advanced optical inspection tool

Ryota Harukawa, Masami Aoki, Andrew Cross, Venkat Nagaswami, Tadatoshi Tomita, Seiji Nagahara, Makoto Muramatsu, Shinichiro Kawakami, Hitoshi Kosugi, Benjamen Rathsack, Takahiro Kitano, Jason Sweis, Ali Mokhberi

Proceedings Volume 8681, 86811A (2013) https://doi.org/10.1117/12.2011177

KEYWORDS: Inspection, Semiconducting wafers, Wafer inspection, Reticles, Wafer-level optics, Epitaxy, Optical inspection, Defect inspection, Optical lithography, Directed self assembly

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Proceedings Article | 29 March 2013 Paper

Paper

Advances in directed self assembly integration and manufacturability at 300 mm

Benjamen Rathsack, Mark Somervell, Makato Muramatsu, Keiji Tanouchi, Takahiro Kitano, Eiichi Nishimura, Koichi Yatsuda, Seiji Nagahara, Hiroyuki Iwaki, Keiji Akai, Mariko Ozawa, Ainhoa Romo Negreira, Shigeru Tahara, Kathleen Nafus

Proceedings Volume 8682, 86820K (2013) https://doi.org/10.1117/12.2012018

KEYWORDS: Etching, Polymethylmethacrylate, Manufacturing, Picosecond phenomena, Ecosystems, Semiconducting wafers, Inspection, Directed self assembly, Materials processing, Polymers

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Proceedings Article | 26 March 2013 Paper

Paper

Fabrication of 28nm pitch Si fins with DSA lithography

Gerard Schmid, Richard Farrell, Ji Xu, Chanro Park, Moshe Preil, Vidhya Chakrapani, Nihar Mohanty, Akiteru Ko, Michael Cicoria, David Hetzer, Mark Somervell, Benjamen Rathsack

Proceedings Volume 8680, 86801F (2013) https://doi.org/10.1117/12.2011607

KEYWORDS: Optical lithography, Etching, Silicon, Photoresist materials, Finite element methods, Picosecond phenomena, Coating, Polymethylmethacrylate, Lithography, Directed self assembly

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SPIE Journal Paper | 9 August 2012 Open Access

Open Access

Special Section Guest Editorial: Alternative Lithographic Technologies

William Tong, Douglas Resnick, Benjamen Rathsack

JM3, Vol. 11, Issue 3, 031401, (August 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.031401

KEYWORDS: Lithography, Optical lithography, Explosives, Nanoimprint lithography, Semiconductor manufacturing, Semiconductors, Optics manufacturing, Immersion lithography, Double patterning technology, Directed self assembly

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Proceedings Article | 21 March 2012 Paper

Paper

Pattern scaling with directed self assembly through lithography and etch process integration

Benjamen Rathsack, Mark Somervell, Josh Hooge, Makoto Muramatsu, Keiji Tanouchi, Takahiro Kitano, Eiichi Nishimura, Koichi Yatsuda, Seiji Nagahara, Iwaki Hiroyuki, Keiji Akai, Takashi Hayakawa

Proceedings Volume 8323, 83230B (2012) https://doi.org/10.1117/12.916311

KEYWORDS: Etching, Semiconducting wafers, Line edge roughness, Picosecond phenomena, Lithography, Polymers, Polymethylmethacrylate, Chemical analysis, Silicon, Directed self assembly

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Proceedings Article | 15 March 2012 Paper

Paper

Comparison of directed self-assembly integrations

Mark Somervell, Roel Gronheid, Joshua Hooge, Kathleen Nafus, Paulina Rincon Delgadillo, Chris Thode, Todd Younkin, Koichi Matsunaga, Ben Rathsack, Steven Scheer, Paul Nealey

Proceedings Volume 8325, 83250G (2012) https://doi.org/10.1117/12.916406

KEYWORDS: Semiconducting wafers, Image processing, Optical lithography, Thin film coatings, Lithography, Etching, Reticles, Scanners, Scanning electron microscopy, Directed self assembly

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SPIE Journal Paper | 1 January 2011

Resolution-linewidth roughness-sensitivity performance tradeoffs for an extreme ultraviolet polymer bound photo-acid generator resist

Roel Gronheid, Alessandro Vaglio Pret, Benjamen Rathsack, Joshua Hooge, Steven Scheer, Kathleen Nafus, Hideo Shite, Junichi Kitano

JM3, Vol. 10, Issue 1, 013017, (January 2011) https://doi.org/10.1117/12.10.1117/1.3555090

KEYWORDS: Extreme ultraviolet, Diffusion, Polymers, Data modeling, Line width roughness, Extreme ultraviolet lithography, Quantum efficiency, Absorbance, Silicon, Contamination

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Proceedings Article | 30 March 2010 Paper

Paper

The optimizations of resist shrink process using track-based technology

Yoshihiro Kondo, Atsushi Ookouchi, Toyohisa Tsuruda, Masahiro Yamamoto, Takasi Saito, Tsuyoshi Shibata, Satoru Shimura, Fumiko Iwao, Ben Rathsack, Michael Carcasi

Proceedings Volume 7639, 76390X (2010) https://doi.org/10.1117/12.846497

KEYWORDS: Photoresist processing, Line width roughness, Etching, Semiconducting wafers, Double patterning technology, Diffusion, Image processing, Thin film coatings, Critical dimension metrology, Particles

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Proceedings Article | 26 March 2010 Paper

Paper

EUV RLS performance tradeoffs for a polymer bound PAG resist

Roel Gronheid, Alessandro Vaglio Pret, Benjamen Rathsack, Joshua Hooge, Steven Scheer, Kathleen Nafus, Hideo Shite, Junichi Kitano

Proceedings Volume 7639, 76390M (2010) https://doi.org/10.1117/12.847489

KEYWORDS: Extreme ultraviolet, Polymers, Diffusion, Line width roughness, Data modeling, Quantum efficiency, Silicon, Absorbance, Interfaces, Contamination

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Proceedings Article | 1 April 2009 Paper

Paper

Resist fundamentals for resolution, LER, and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects

Benjamin Rathsack, Kathleen Nafus, Shinichi Hatakeyama, Yuhei Kuwahara, Junichi Kitano, Roel Gronheid, Alessandro Vaglio Pret

Proceedings Volume 7273, 727347 (2009) https://doi.org/10.1117/12.814287

KEYWORDS: Line width roughness, Diffusion, Calibration, Extreme ultraviolet lithography, Data modeling, Photoresist processing, Line edge roughness, Polymers, Absorbance, Performance modeling

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Proceedings Article | 26 March 2008 Paper

Paper

Finite element modeling of PAG leaching and water uptake in immersion lithography resist materials

Ben Rathsack, Steven Scheer, Yuhei Kuwahara, Junichi Kitano, Roel Gronheid, Christina Baerts

Proceedings Volume 6923, 692315 (2008) https://doi.org/10.1117/12.772850

KEYWORDS: Diffusion, Finite element methods, Immersion lithography, Photoresist processing, Data modeling, Lithography, Water, Performance modeling, Liquids, Polymer thin films

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Proceedings Article | 7 March 2008 Paper

Paper

Image contrast contributions to immersion lithography defect formation and process yield

Ben Rathsack, Josh Hooge, Steven Scheer, Kathleen Nafus, Shinichi Hatakeyama, Hontake Kouichi, Junichi Kitano, Dieter Van Den Heuval, Philippe Leray, Eric Hendrickx, Phillipe Foubert, Roel Gronheid

Proceedings Volume 6924, 69244W (2008) https://doi.org/10.1117/12.772728

KEYWORDS: Line edge roughness, Polymers, Semiconducting wafers, Nanoimprint lithography, Image processing, Immersion lithography, Photoresist processing, Diffusion, Scanning electron microscopy, Reticles

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Proceedings Article | 14 March 2006 Paper

Paper

Accurate OPC model generation through use of a streamlined data flow incorporating automated test-structure layout and CD-SEM recipe generation

Mary Coles, Lewis Flanagin, Ben Rathsack, Steve Prins, James Blatchford

Proceedings Volume 6156, 615614 (2006) https://doi.org/10.1117/12.660600

KEYWORDS: Data modeling, Optical proximity correction, Scanning electron microscopy, SRAF, Semiconducting wafers, Photomasks, Image filtering, Process modeling, Error analysis, Data processing

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Proceedings Article | 10 May 2005 Paper

Paper

Inline sidewall angle monitoring of memory capacitor profiles

Ben Rathsack, Scott Bushman, Francis Celii, Stephen Ayres, Roman Kris

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600750

KEYWORDS: Capacitors, Etching, Scanning electron microscopy, Atomic force microscopy, Scatterometry, Composites, Metrology, 3D modeling, Semiconducting wafers, 3D metrology

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The integration of embedded ferroelectric random access memory (FRAM) into a standard CMOS flow requires significant control and characterization of the patterned capacitor sidewall angle. The electrical functionality of the FRAM capacitor is highly dependent on the post-etch sidewall characteristics of the TiAlN hardmask and Ir/PZT/Ir capacitor film stack. In this study, we explored various options for determining the sidewall profile of these capacitors including scanning electron microscope (SEM), atomic force microscopy (AFM) and scatterometry. A series of capacitor samples with ranges of sidewall slopes from 60 degrees to 80 degrees was generated to test each measuring technique's robustness. All of the techniques demonstrated relatively accurate sidewall angle measurements of the high-angle capacitor profiles relative to cross-section SEMs. However, the CD SEM had difficulty identifying the top edge of the low-angle capacitor samples due to the large amount of profile roughness, which induced a large measurement error range. Additional optimization is required to improve the CD SEM's precision, before it would be a viable in-line monitor for the FRAM process. The AFM provided good accuracy and precision on the high-angle capacitor profiles, but the tip size limited the measurements to spaces larger than 120 nm. Furthermore, the AFM had a long move-acquire-measure (MAM) time of 5 minutes/site, which limited its throughput as an inline monitor. The scatterometer predicted bottom-stack sidewall angle measurements (2 trapezoid model) that were consistent with the cross-section SEMs, and it produced the lowest across wafer sidewall angle range. It also had the fastest MAM time of 5 seconds/site compared to the other techniques. However, it was difficult to generate an accurate scatterometry model due to the complex optical film stack that incorporated low surface reflectivity and higher surface roughness. While each technique had limitations, scatterometry appeared to be the most capable of inline sidewall angle monitoring.

Proceedings Article | 1 August 2002 Paper

Paper

CD variations from nontrivial mask-related factors

Z. Mark Ma, Won Kim, Benjamen Rathsack, Guoqiang Xing, Mark Somervell, Hyesook Hong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476928

KEYWORDS: Photomasks, Critical dimension metrology, Pellicles, Semiconducting wafers, Reticles, Calibration, Etching, Photoresist processing, Process control, Metrology

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Proceedings Article | 30 July 2002 Paper

Paper

Aerial image degradation effects due to imperfect sidewall profiles of EAPSM mask for 130-nm device node: 3D EMF simulations and wafer printing results

Won Kim, Benjamen Rathsack

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474576

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Attenuators, Quartz, Printing, Etching, Optical lithography, 193nm lithography, Nanoimprint lithography

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Proceedings Article | 24 August 2001 Paper

Paper

Rational design of bleachable nonchemically amplified DUV photoactive compounds

Benjamen Rathsack, Peter Tattersall, Cyrus Tabery, Kathleen Lou, Timothy Stachowiak, David Medeiros, Jeff Albelo, Peter Pirogovsky, Dennis McKean, C. Grant Willson

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436887

KEYWORDS: Picture Archiving and Communication System, Deep ultraviolet, Chromophores, Photoresist processing, Lithography, Absorbance, Molecules, Mask making, Photomasks, Hydrogen

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Proceedings Article | 22 January 2001 Paper

Paper

Process development for 257-nm photomask fabrication using environmentally stable chemically amplified photoresists

Jeff Albelo, Benjamen Rathsack, Peter Pirogovsky

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410734

KEYWORDS: Critical dimension metrology, Reflectivity, Photomasks, Photoresist materials, Photoresist processing, Polymers, Prototyping, Semiconducting wafers, Deep ultraviolet, Antireflective coatings

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Proceedings Article | 22 January 2001 Paper

Paper

Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabrication

Benjamen Rathsack, Cyrus Tabery, Jeff Albelo, Peter Buck, C. Grant Willson

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410739

KEYWORDS: Photomasks, Chromium, Reflectivity, Oxides, Absorption, Refraction, Chemically amplified resists, Lithography, Photoresist processing, Mask making

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Proceedings Article | 23 June 2000 Paper

Paper

Simulation-based formulation of a nonchemically amplified resist for 257-nm laser mask fabrication

Benjamen Rathsack, Cyrus Tabery, Timothy Stachowiak, Jeff Albelo, C. Grant Willson

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388345

KEYWORDS: Picture Archiving and Communication System, Lithography, Quantum efficiency, Absorbance, Photomasks, Photoresist developing, Photoresist materials, Deep ultraviolet, Photoresist processing, Refraction

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The demand for smaller and more uniform features on photomasks has inspired consideration of a DUV (257 nm) resist process for optical pattern generation. Chemically amplified resists require storage and exposure in carbon filtered environments, and they require post-exposure bakes. Few mask facilities are set up to handle chemically amplified resists commonly used in deep UV wafer fabrication process. Hence, it is appropriate to explore the lithographic performance of non-chemically amplified resist materials for 257 nm laser photomask lithography. Resist characterization and lithography simulation were used to formulate a 257 nm resist from DNQ/novolak materials provided by a commercial resist supplier. Diazonaphthoquinone (DNQ)/novolak resists have not been used for DUV Integrated Circuit (IC) applications mainly due to the low sensitivity and the strong absorbance of the DNQ photoactive compound (PAC) at 248 nm. However, a 2,1,4 DNQ based resist has been characterized that bleaches at 257 nm and inhibits novolak. The photoproduct of the 2,1,4 DNQ PAC is much more transparent at 257 nm than 248 nm. Novolak resin also has an absorbance minimum in the DUV at 257 nm that provides transparency similar to poly (hydroxystyrene). Traditional photoresist formulation requires tedious, iterative, and expensive manufacturing trials. Resist characterization and lithography simulation can be used to relate lithographic performance (resolution, sidewall and process latitude) to resist formulation parameters (PAC concentration, developer concentration, etc.), thereby supporting the formulation optimization. An exposure system using a 257 nm frequency doubled argon laser system has been constructed to study the resist photokinetics. Dill exposure parameters (A, B and C) have been extracted for a 2,1,4 DNQ/novolak based resist. Dissolution rate measurements have been made with a development rate monitor developed at the University of Texas at Austin. Simulation using the exposure and development rate models were used to determine the resist formulation that maximizes the sidewall angle and exposure latitude for isolated resist spaces. Preliminary experiments reveal that a DNQ/novolak resist is capable of resolving 0.30 micrometer linewidths using a 257 nm optical pattern generator.

Proceedings Article | 30 December 1999 Paper

Paper

Characterization of a non-chemically amplified resist for photomask fabrication using a 257-nm optical pattern generator

Benjamen Rathsack, Cyrus Tabery, Timothy Stachowiak, Tim Dallas, Cheng-Bai Xu, Mike Pochkowski, C. Grant Willson

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373362

KEYWORDS: Picture Archiving and Communication System, Photomasks, Absorption, Lithography, Absorbance, Transparency, Deep ultraviolet, Photoresist processing, Photoresist developing, Mask making

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I-line optical pattern generators using non-chemically amplified resists have become the workhorses for high throughput mask fabrication. The demand for smaller and more uniform features on photomasks has driven the development of a 257 nm optical pattern generator. A non-chemically amplified resist is being developed to maximize the performance of this new 257 nm mask tool. Resist characterization and lithography simulation are being used to formulate a non-chemically amplified resist for 257 nm optical pattern generators. Non- chemically amplified resists are advantageous for us in mask fabrication due to their storage and post-exposure stability. Chemically amplified resists may provide higher performance but they also require environmental mini-environments and a post-exposure bake equipment not commonly present in mask houses. Diazonaphthoquinone (DNQ)/novolak resists have not been used for DUV Integrated Circuit (IC) applications mainly due to the low sensitivity and the strong absorbance of the DNQ photoactive compound (PAC) at 248 nm. However, a 2,1,4 DNQ based resist has been characterized that bleaches at 257 nm and inhibits novolak. The photoproduct of the 2,1,4 DNQ PAC is much more transparent at 257 nm than 248 nm. Novolak resin is too strongly absorbing for use in formulating efficient 248 nm resists, but novolak has an absorbance minimum at 257 nm that provides transparency similar to poly (hydroxystyrene). Lithography simulation is being used to develop a non- chemically amplified resist to minimize the expensive iteration of manufacturing trials. An exposure system using a 257 nm frequency double Ar laser system has been constructed to study the resist photokinetics. Dill exposure parameters (A, B and C) have been extracted for a 2,1,4 DNQ/novolak based resist. Dissolution rate measurements have been made with a DRM developed at the University of Texas at Austin. Simulation is used to determine the optimal resist absorption, bleaching, dose and dissolution properties to maximize resolution. It is possible to formulate a high performance resist for 257 nm if care is taken in optimization of the formulation.

Proceedings Article | 30 December 1999 Paper

Paper

Lithography simulation of sub-0.30-um resist features for photomask fabrication using i-line optical pattern generators

Benjamen Rathsack, Cyrus Tabery, Cecilia Philbin, C. Grant Willson

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373343

KEYWORDS: Photomasks, Reflectivity, Antireflective coatings, Reflection, Photoresist processing, Interfaces, Photoresist materials, Refraction, Coating, Chromium

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The inorganic antireflection coating (AR3-chromium oxide) commonly used on photomask blanks was designed to minimize flare in h-line (405 nm) lithography steppers. The reflection of light (flare) off this coating (air-photomask) increases with shorter exposure wavelengths. High levels of flare occur in 248 nm and 193 nm IC steppers due to reflections off of the photomask surface. The reflections (standing waves) in photomask resists also increase during exposure using lower wavelengths of light. Lithography simulations and photomask manufacturing trials have led to resist processes that can generate sub-0.30 micron resist features on photomasks with I- line optical pattern generators (ALTA 3500). Lower developer concentration, higher exposure doses and the minimization of standing waves by incorporating a post-exposure bake and/or organic antireflection coatings (ARC) maximizes resolution. High resolution photoresists show standing waves on photomasks fabricated with optical pattern generators. Low contrast resist processes show only small standing waves or in certain cases resist 'footing.' The use of organic antireflection coatings can minimize standing waves and allow the use of high contrast resist processes. ARCs reduce the swing ratio, which improves linewidth uniformity. ARCs also improve the adhesion of the resist to the photomask surface. Simulations reveal that the optimal ARC coating thickness is around 46 nm for typical I-line systems and around 50 nm for 257 nm non- chemically amplified photomask resists. Preliminary I-line photomask manufacturing trials have been done with bottom antireflection coatings at the DPI Reticle Technology Center. The first process trials reveal that the standing waves in high resolution resists were reduced but not removed. Very precise control of the ARC thickness must be exercised to completely extinguish standing waves and careful film thickness optimization appears to be necessary to minimize these reflections.

Proceedings Article | 11 June 1999 Paper

Paper

Optical lithography simulation and photoresist optimization for photomask fabrication

Benjamen Rathsack, Cyrus Tabery, Steven Scheer, Mike Pochkowski, Cecilia Philbin, Franklin Kalk, Clifford Henderson, Peter Buck, C. Grant Willson

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350173

KEYWORDS: Photomasks, Refraction, Lithography, Picture Archiving and Communication System, Data modeling, Photoresist materials, Device simulation, Chromium, Photoresist processing, Optical simulations

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Proceedings Article | 29 June 1998 Paper

Paper

Improved simulation of photoresists using new development models

Ralph Dammel, John Sagan, Elaine Kokinda, Neville Eilbeck, Chris Mack, Graham Arthur, Clifford Henderson, Steven Scheer, Benjamen Rathsack, C. Grant Willson

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312399

KEYWORDS: Photoresist developing, Data modeling, Photoresist materials, Radon, Autoregressive models, Diffusion, Affine motion model, Standards development, Chlorine, Picture Archiving and Communication System

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Proceedings Article | 29 June 1998 Paper

Paper

Modeling parameter extraction for DNQ-novolak thick film resists

Clifford Henderson, Steven Scheer, Pavlos Tsiartas, Benjamen Rathsack, John Sagan, Ralph Dammel, Andreas Erdmann, C. Grant Willson

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312415

KEYWORDS: Refractive index, Data modeling, Photoresist developing, Photoresist materials, Reflectivity, Software development, Silicon, Lithography, Absorbance, Picture Archiving and Communication System

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Showing 5 of 28 publications

Conference Committee Involvement (7)

Emerging Patterning Technologies 2017

27 February 2017 | San Jose, California, United States

Alternative Lithographic Technologies VIII

22 February 2016 | San Jose, California, United States

Alternative Lithographic Technologies VII

23 February 2015 | San Jose, California, United States

Alternative Lithographic Technologies VI

24 February 2014 | San Jose, California, United States

Alternative Lithographic Technologies V

25 February 2013 | San Jose, California, United States

Showing 5 of 7 Conference Committees

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