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For red emitting devices, around 637 nm an output power up to about 1 W is achieved, limited by the properties of the semiconductor material. Devices emitting in the longer wavelength range around 1000 nm reach output powers up to 15 W. For all the above manufactured diode lasers about 80% of the emitted laser light is within the diffraction limited central lobe. Here, e.g. 10 W diffraction limited power was measured.
The devices are successfully implemented into experiments for non-linear frequency conversion, e.g. SHG and the pumping of an OPO, as an excitation source for absorption spectroscopy, as pump source for fs-lasers, and their emission is efficiently coupled into single mode fibers.
The pump source, a DFB laser emitting at 976 nm, and a periodically poled lithium niobate (PPLN) ridge waveguide crystal is used for the second harmonic generation (SHG). Both components are mounted on a μ-Peltier-element for temperature control. Here, a common wavelength tuning of the pump wavelength and the acceptance bandwidth of the SHG crystal via temperature is achieved.
With the results the light source is suitable for portable Raman and SERDS experiments with a flexible spectral distance between both excitation wavelengths for SERDS with respect to the sample under investigation.
The monolithic devices reach output powers up to 215 mW with emission widths of about 20 pm. At 200 mW the conversion efficiency is 20%, i.e. the electrical power consumption is only 1 W. The spectral distance between the two laser cavities is about 0.6 nm, i.e. 10 cm-1 as targeted. The side mode suppression ratio is better than 50 dB. Amplifying these devices using a ridge waveguide amplifier an output power of about 750 mW could be achieved maintaining the spectral properties of the master oscillator.
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