Integrated electro-optic modulators offer huge potential to meet communications and computations' rapidly growing bandwidth requirements. Devices based on silicon allow high-volume, low-cost CMOS fabrication, and co-integration with the CMOS circuits. They are promising candidates for mass-producible Tb/s-scale inter-rack and intra-rack interconnects. This talk will focus on our advancement of silicon-based optical modulators: (1) miniaturized all silicon MOSCAP modulators for co-packaged optics and its integration with low voltage drivers, allowing low optical power consumption of 2 pJ/bit. (2) Novel carrier absorption enhanced electro-optical modulation in MOSCAP ring resonators towards integration with ultra-low voltage (<1V) CMOS drivers; (3) Carrier depletion ring unity device for large scale and high bandwidth density error-free links; (4) Linear DC-Kerr effect dominated silicon modulators towards lidar and quantum applications.
High speed optical modulators are important for a number of applications served by silicon photonics. Here we present our recent work towards high speed free carrier accumulation based optical modulators where a high speed and efficient operation is achieved. Such silicon optical modulators typically need to be built in sub-micrometre sized waveguides which are challenging to couple light to and from. Also presented are experimental results from a buried 3D-taper that is able to couple efficiently between a waveguide of height ~1.5um and a 220nm high waveguide. Losses below 0.6dB are achieved limited by the loss of the material used.
The silicon optical modulator is a key component in a high speed optical data link. To advance the modulator performance beyond the popular carrier depletion based devices, we have produced a capacitive device which is instead based upon the accumulation of free carriers either side of a thin insulating layer positioned in the middle of the waveguide. Such a device has a superior efficiency compared with the carrier depletion approach allowing compactness and improved power consumption whilst retaining high speed operation and CMOS compatibility.
We reviewed our recent developments on the post-fabrication trimming techniques and programmable photonic circuits based on germanium ion implanted silicon waveguides. Annealing of ion implanted silicon can efficiently change the refractive index. This technology has been employed to fine-tune the optical phase, and therefore the operating point of photonic devices, enabling permanent correction of optical phase error induced by fabrication variations. High accuracy phase trimming was achieved with laser annealing and a real-time feedback control system. Erasable waveguides and directional couplers were also demonstrated, which can be used to implement programmable photonic circuits with low power consumption.
Single-nanoantenna has intrigued vast interest due to its exceptional properties such as light harvesting and field enhancement, which provide the opportunities for strengthening light-matter interaction and efficient photon manipulation in nano-scale, as well as boosting nonlinear response. On the other hand, materials with structural or electronic phase transition have been employed to achieve large optical modulation contrast and order-unity switching, making them promising building blocks for high-performance optical circuits and devices with ultra-small footprint. In this context we demonstrate nano-scale all-optical modulation with single Au antennas fabricated on phase-transition material vanadium dioxide (VO2) substrate. VO2 films are deposited on boroaluminosilicate glass coated with a 30-nm layer of fluorine-doped tin oxide. The inclusion of this intermediate layer allows the production of VO2 films with low surface roughness and suitable thermochromic transition temperature. Then the nanoantennas are fabricated by e-beam lithography and subsequent 45-nm-thick gold deposition on the VO2 substrate. A 5-nm-thick Ti layer is used to improve the adhesion of the gold to the VO2. We use a pump-probe spectroscopy to characterize the modulation feature of the antenna/VO2. The pump beam at 1060 nm wavelength is used to introduce a local heating for VO2's phase transition and the probe beam from 1100 nm to 2000 nm wavelength is for readout of the modulated local transmission of antenna/VO2 hybrid owing to the dielectric environment change. A spatial modulation technique is also used to extract the differential transmission (ΔT/T) around the antennas. As a result, with pump pulse energy increasing to less than 1 nJ, the measured ΔT/T of single-antenna//VO2 hybrid exhibits substantial change that crossing the zero line and significant blue shift. As reported the ΔT/T obtained from spatial modulation spectroscopy is supposed to be proportional to the antenna’s extinction cross section. However, with the obtained negative values which lead to unphysical extinction cross sections less than 0, we believe the VO2 substrate beneath the antennas is highly involved as its optical property has been modified considerately. In addition, we observe that the pump-modulated differential transmission of the antenna/VO2 hybrid evidently depends on the polarisation of the pump when it is below a certain level. In this regime, the parallel pumping excites the longitudinal resonant mode while the perpendicular one only induces non-resonant absorption of antenna’s transverse mode. Going beyond this regime, the stronger pump transits the VO2 substrate from insulating phase into metallic phase completely, which dominates the dielectric environment change of the antenna, leading to nearly polarisation-independent modulation. The time for fully switch-on obtained from the pump-probe measurement is less than 50 ps. We also investigate the time response of the differential transmission dependent on the pulse repetition rate and substrate temperature, respectively. Less modulation depth with repetition rate over 2 MHz or base temperature higher than 40 °C suggest that the heat accumulation from adjacent pulses and thermal equilibrium time plays important roles in the achievable modulation speed. The single-antenna/VO2 structure may find applications in nano-scale optoelectronics for multiple functionalities including modulation, memory and so on.
Plasmonic nanoantennas are of interest because of their capability to enhance light-matter interactions. We present new results where antennas are used to obtain nanoscale devices with tunable characteristics. Applications of these devices include electrically controlled antennas, antennas integrated on silicon waveguides, and optical solar reflectors for spacecraft. By using tunable materials such as vanadium dioxide and doped-metal oxides, we demonstrate precise control and active tunability of the optical response. Experimental results are supported by combined electro-optical modelling at the nanoscale.
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