Based on dynamics models of the electronic bi-stable behavior in a semiconductor ring laser and using the methods of
the modern nonlinear dynamics, the stability and bifuraction behavior in a semiconductor ring laser are analyzed and
calculated in this paper. The calculated results show that the ring laser can undergoes the Hopf bifurcation by changing
pump parameters which can lead the complex nonlinear movement such as limit cycle and Chaos. The effects of
backscatter parameters on the operation regions are also calculated The calculated results show that the change of
backscatter parameter can result different dynamics behaviors including bifurcation. At last the theoretical result is
compared with experiment. The device process and structure is described and the experiment result agree with our
Silicon-based optical interconnection can solve the problem in interconnection of ULSI, can be used in optical
communication and can be used in optical calculation in future.
A complete Silicon base interconnection optoelectronic system is achieved, which is composed of light emitting
diode (LED), driver, detector, and amplifier. Main attention is to prove the feasibility to fulfill optical
transmission and detection in using Silicon material, and obtains enhancement of optoelectronic conversion
efficiency at the same time.
The phenomenon of electro-luminescence of Silicon positive intrinsic negative (pin) structure diode is
investigated. The optical spectral response of the system at 700nm indicates that the emitting light source has
low optical loss in Silicon. So the LED is suitable for Silicon optoelectronic interconnection system. The
detector is constructed with the same pin structure, the responsivity spectrum of the detector has a lot of
overlapping area with the spectrum of the LED. So, high transmission efficiency can be achieved in such a
system. Moreover, the driver and the amplifier circuit are all realized with Silicon material.
The performance of that system was tested in ordinary condition. The EL response time achieves to 100ns and
EL quantum efficiency achieves to 0.05%, which is a high level in Silicon optical interconnection.
This system is completely compatible with silicon on isolator (SOI) technique and can serve as a foundamental
basis of the research in the field of optical connection. Possible improvements for the optical connection system
have been discussed.
As the length scale of the devices decreases, electrons will spend increasingly more of their time in
the connections between components; this interconnectivity problem could restrict further increases in
computer chip processing power and speed. Considerable effort is therefore being expended on the
development of efficient silicon light-emitting devices compatible with silicon based integrated circuit
Here, we describe the electrical and optical properties of Silicon positive intrinsic negative (pin)
structure diode that operates at room temperature. The voltage-current and electroluminescence (EL)
property are measured at room temperature for a silicon pin diode under forward biased current. The
optical spectral response of the system at 700nm indicates that the emitting light source has low optical
loss in Silicon. So the LED is suitable for Silicon optoelectronic interconnection system.
The rate-equation model for free carriers on light-emitting pin structure and the equivalent circuit
model based on it have been presented. We have developed a way to calculate the model parameters by
comparison with experimental results. This parameter extraction way can be fully accomplished
automatically by using MATHCAD program and the equivalent circuit model is simulated by using
HSPICE program respectively. The results of both experiment and simulation results are good agreement with each other.