Absorbance data on a variety of silicon-containing monomers are reported at 157nm. Choice of appropriate silicon monomers led to a second-generation bilayer resist, which showed improved transparency over the first-generation silicon-derived hydroxystyrene based resist. Increasing the overall silicon content improved its transparency and O<sub>2</sub> etch properties. The second-generation bilayer resist demonstrated 80nm resolution for dense line/space pairs. No silicon outgassing or post-exposure film loss was observed upon 157nm exposure.