ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered p-Si (100) substrates by
radio frequency magnetron sputtering, to fabricate AZO/SiO<sub>2</sub>/p-Si heterojunction, as an absorber for ultraviolet cell. The
optical and electrical properties of the Al doped - ZnO films were characterized by UV-VIS spectrophotometer, current-voltage
measurement, and four point probe technique, respectively. The results show that AZO films have good quality.
The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows
typical rectifying behavior.