The infrared transmitting electromagnetic interference shielding (Infrared-EMI) filters were fabricated through transferring multilayer graphene on ZnS and As<sub>40</sub>Se<sub>60</sub> infrared substrates. The monolayer graphene was grown by chemical vapor deposition (CVD) catalyzed by copper foil. The carrier mobility of monolayer graphene transferred on quartz glass is 1318.9 cm<sup>2</sup> /V·s, sheet resistance (R<sub>s</sub>) is 483 Ω/ and I(2D)/I(G) of Raman result is 2.27. The monolayer graphene on copper foil was transferred on ZnS and As<sub>40</sub>Se<sub>60</sub> substrates using wet chemical etching method, the multilayer graphene were overlaid on ZnS and As<sub>40</sub>Se<sub>60</sub> substrates by repeating the same transferring process. The Rs of monolayer graphene film on ZnS substrate is 1100 Ω/ and decreases to 65 Ω/ as the number of graphene layer rises to 13. The R<sub>s</sub> of monolayer graphene on As<sub>40</sub>Se<sub>60</sub> substrate is 1414 Ω/ and decreases to 68 Ω/ as the number of graphene layer is up to 17. ZnS substrate transferred with 13 layers of graphene shows relative 94.7 % infrared transmittance in 8~12 μm waveband. As<sub>40</sub>Se<sub>6</sub> substrate transferred with 17 layers of graphene on As<sub>40</sub>Se<sub>6</sub> substrate show relative 81.3 % infrared transmittance in 8~18 μm waveband. OTA300 - 104 V. The average EMI shielding effectiveness of multilayer graphene on ZnS (13 layers) and on As<sub>40</sub>Se<sub>60</sub> substrates (17 layers) in a frequency range of 30 MHz~1.5 GHz is 15.6 dB and 13.3 dB, respectively. ZnS-graphene and As<sub>40</sub>Se<sub>60</sub>-graphene Infrared-EMI filter realize the coexistence of infrared transmitting and EMI shielding function.
Tin doped indium oxide (ITO) thin films were prepared on IR glass substrates at different oxygen flow rate by
ion-assisted electron beam evaporation method. Properties such as microstructure, morphology, sheet resistance and
optical transmittance were investigated by X-ray diffractometer, SEM, four-point probe and UV-VIS-IR
spectrophotometer, respectively. Lattice constant, inner stress level and energy band gap (Eg) of ITO thin films
as-deposited were calculated and discussed. The mechanical properties of ITO thin films were studied by scratching
method. The measurements were performed by scratch tester and the results were recorded as acoustic emission spectra
and scratch track images taken by SEM. Relationship between inner stress level and mechanical performance was
investigated in detail.
Low-temperature sealing glass (320-380°C) can be applied to the hermetic package of optical fiber devices, without the need of metallization. This paper introduced a PbO-ZnO-B<sub>2</sub>O<sub>3</sub>-F system low-temperature glass composite which has an softening point as low as 246°C and expansion coefficient of 8.0 ppm/°C. The glass composite was sealed with quartz glass fibers at 360-390°C, then the effect of sintering temperature and holding time on the surface reaction were well investigated. Although the mismatch of expansion coefficient exists within glass fiber, negative expansion filler and parent glass, they combined well with each other after a short time heating. The F- in glass network helped to lower the sealing temperature, wet the oxide surface and promote the combination of parent glass and fibers. The sealing temperature and holding time affect the interface layer and the shape of the fiber. The optimum packaging process should be sealing composite glass and fibers beneath 380°C with shortened holding time as possible. Using glazed glass composite preforms, sealing fiber in a ferrule to achieve compressed package will be helpful to realize hermetic package for optical fiber devices.