In this paper, ZnO thin films with a polycrystalline preferential orientation and low surface roughness were successively
achieved on Si (100) substrate by RF magnetron sputtering techniques under optimized experimental parameters. In our
sputtered samples, the average grain size is around 15~23 nm calculated from Scherrer Formula, and transmittance in
visible range was over 80% measured by spectrophotometer, d<sub>33</sub> equal to 27.5 pV/m measured by Piezoelectric Force
Microscopy (PFM), surface roughness is below 3.00 nm and a good (002) plane orientation growth observed from XRD
patterns. All the excellence properties of the ZnO thin films we acquired signal them are promising materials to be
applied in electronic devices.
This paper reports mechanical properties of P-doped hydrogenated nanocrystalline silicon (nc-Si:H) films prepared by
PECVD in different conditions. The basic mechanical properties of nanocrystalline silicon thin films are evaluated from
load, hardness and modulus curves using a nanoindentation instrument. The effect of P-doping rate and types of
substrates on mechanical properties is discussed. It is indicated that proper phosphorus-doped nanocrystalline silicon
films have lower carrying capacity, but they hold ideal interface combination strength and lower surface roughness;
Nanocrystalline silicon thin films on glass substrates have better distortion coordination and film-substrate bonding
strength compared to films on silicon substrates. In addition, it is also expected that the thickness of thin films can be
roughly estimated by the first obvious step's position on the Load-depth curves.