Veeco MOCVD solutions are capable of supporting multiple substrates (GaAs, InP, sapphire, Si), and offer seamless transition to larger substrate sizes. For 6” GaAs red micro LED, Lumina® has demonstrated total population wavelength yield of >95% in 3 nm bin with defectivity <0.5 / cm2 @ >2um and 25% higher throughput than other platforms. For 6” sapphire miniLED, EPIK® has demonstrated within wafer wavelength 1sigma uniformity of 0.68nm (blue) / 1.24nm (green). For microLED on 200mm and 300mm silicon, Veeco has developed Propel® single wafer reactor for best in-class uniformity. Details of the technology and current data will be discussed.
We’ve developed a next-generation MOCVD platform for high-performance, commercial VCSEL production. The tool is capable of achieving total population uniformity >95% yield in +/- 3nm bin on 6” GaAs. In addition, the tool is capable to go >300 runs between maintenance while maintaining very fast growth rate up to 4.2micron / hr and low [C] impurity <2E17 cm-3. Another parameter critical to VCSEL is defectivity, where <0.5 defects / cm2 @ >2 micron size have been demonstrated. Correlation of epi and VCSEL device parameters such as threshold current density (Jth) and power conversion efficiency will be discussed.