We evaluate the limiting efficiency of full and partial solar spectrum harvesting via the process of internal photoemission in Au-semiconductor Schottky junctions. Our results based on the ab initio calculations of the electron density of states (e-DOS) reveal that the limiting efficiency of the full-spectrum Au converter based on hot electron injection is below 4%. This value is even lower than previously established limit based on the parabolic approximation of the Au electron energy bands. However, we predict limiting efficiency exceeding 10% for the hot holes collection through the Schottky junction between Au and p-type semiconductor. Furthermore, we demonstrate that such converters have more potential if used as a part of the hybrid system for harvesting high- and low-energy photons of the solar spectrum.