As the patterning of IC manufacturing shrinks to the 32-nm node and beyond, high-NA and immersion lithography are
required for pushing resolution to its physical limit. To achieve good OPC performance, various physical effects such as
polarization, mask topography, and mask pellicle have to be considered to improve the model accuracy.
The attenuation and the phase variation of TE and TM wave components induced by the pellicle would impact optical
qualities in terms of resolution, distortion, defocus shift, and high-order aberrations. In this paper, the OPC model
considering pellicle effects is investigated with Jones pupil. The CD variation induced by the pellicle effect can be
predicted accurately. Therefore, the improvement on model accuracy for 32-nm node is demonstrated.