We describe recent work on InGaN lasers and AlGaN UV LEDs at the Palo Alto Research Center (PARC). The
presentation includes results from InGaN laser diodes in which the usual epitaxial upper cladding layer is replaced with
an evaporated or sputtered non-epitaxial material, such as indium tin oxide, silver, or a silver-palladium-copper alloy [1,
2]. Non-epitaxial cladding layers offer several advantages to long wavelength InGaN laser diodes, such as eliminating
the need to expose vulnerable InGaN active layers to the high temperatures required for growing conventional p-AlGaN
cladding layers subsequent to the active layer growth.
The presentation also discusses our recent results on AlGaN UV LEDs. UV LEDs with 300 micron square geometries
operating at λ = 325 nm exhibit output powers of 13 mW with differential quantum efficiencies of 0.054 W/A measured
under wafer-level, unpackaged condition with no heat sink. LEDs operating at λ = 290 nm under similar test conditions
display output powers of 1.6 mW for large-area 300 μm X 1 mm devices.