Mr. Brian Cha Profile

Brian Cha

Senior Director, Advanced Technology Engagement

SPIE Involvement:

Conference Program Committee | Author

Publications (23)

Proceedings Article | 14 October 2011 Paper

EUVL mask inspection using 193nm wavelength for 30nm node and beyond

Jihoon Na, Wonil Cho, Tae-Geun Kim, In-Yong Kang, Byungcheol Cha, Inkyun Shin, Han-Ku Cho

Proceedings Volume 8166, 81661H (2011) https://doi.org/10.1117/12.898896

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Extreme ultraviolet lithography, Modulation, Defect detection, Scanning electron microscopy, Scanners, Reflectivity, Wafer-level optics

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Proceedings Article | 20 March 2010 Paper

Printability and inspectability of programmed pit defects on the masks in EUV lithography

In-Yong Kang, Hwan-Seok Seo, Byung-Sup Ahn, Dong-Gun Lee, Dongwan Kim, Sungmin Huh, Cha-Won Koh, Brian Cha, Seoung-Sue Kim, Han-Ku Cho, Iacopo Mochi, Kenneth Goldberg

Proceedings Volume 7636, 76361B (2010) https://doi.org/10.1117/12.847956

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Defect inspection, Extreme ultraviolet, Critical dimension metrology, Visibility, Ion beams, Atomic force microscopy, Semiconducting wafers

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Proceedings Article | 20 March 2010 Paper

Particle removal challenges of EUV patterned masks for the sub-22nm HP node

Abbas Rastegar, Sean Eichenlaub, Arun John Kadaksham, Byunghoon Lee, Matt House, Sungmin Huh, Brian Cha, Henry Yun, Iacopo Mochi, Kenneth Goldberg

Proceedings Volume 7636, 76360N (2010) https://doi.org/10.1117/12.847056

KEYWORDS: Particles, Extreme ultraviolet, Photomasks, Silica, Ruthenium, Scanning electron microscopy, Reflectivity, Scanning probe microscopy, Vacuum ultraviolet, Inspection

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Proceedings Article | 27 May 2009 Paper

Sub-30-nm defect removal on EUV substrates

Abbas Rastegar, Sean Eichenlaub, Arun John Kadaksham, Matt House, Brian Cha, Henry Yun

Proceedings Volume 7470, 74700Z (2009) https://doi.org/10.1117/12.835197

KEYWORDS: Particles, Inspection, Extreme ultraviolet, Defect detection, Glasses, Surface finishing, Atomic force microscopy, Chemical mechanical planarization, Optical spheres, Quartz

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Proceedings Article | 11 May 2009 Paper

SEMATECH EUVL mask program status

Henry Yun, Frank Goodwin, Sungmin Huh, Kevin Orvek, Brian Cha, Abbas Rastegar, Patrick Kearney

Proceedings Volume 7379, 73790G (2009) https://doi.org/10.1117/12.824257

KEYWORDS: Photomasks, Particles, Extreme ultraviolet, Extreme ultraviolet lithography, Inspection, Lithography, Deposition processes, Defect inspection, Surface roughness, Manufacturing

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As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been made but a continued collaborative effort will be needed along with timely infrastructure investments to meet these challenging goals.

Proceedings Article | 29 May 2007 Paper

Substrate effects on the characteristics of haze defect formation on the photomask surface under exposure condition

Jaehyuck Choi, Han-shin Lee, Jin-sik Jung, Byung Cheol Cha, Sang-Gyun Woo, HanKu Cho

Proceedings Volume 6607, 660709 (2007) https://doi.org/10.1117/12.728922

KEYWORDS: Ions, Air contamination, Chromium, Sulfur, Profiling, Photomasks, Molybdenum, Surface roughness, Chemical analysis, Industrial chemicals

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Proceedings Article | 20 October 2006 Paper

Qualitative analysis of haze defects

Jaehyuck Choi, Soowan Koh, Sunghun Ji, Byung-Cheol Cha, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 6349, 63492S (2006) https://doi.org/10.1117/12.685733

KEYWORDS: Air contamination, Pellicles, Photomasks, Ions, Fluorine, Scanning probe microscopy, Sodium, Magnesium, Aluminum, Chemical analysis

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Proceedings Article | 20 October 2006 Paper

EUV mask pattern inspection for memory mask fabrication in 45-nm node and below

Do Young Kim, Seong Yong Cho, Hun Kim, Sung Min Huh, Dong Hoon Chung, Byung Chul Cha, Jung Woo Lee, Seong Woon Choi, Woo Sung Han, Ki Hun Park, Eun Ji Kim, Zhengyu Guo, Ellen Quach, David Gee, Tom Brown, Aditya Dayal

Proceedings Volume 6349, 63492L (2006) https://doi.org/10.1117/12.686488

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, EUV optics, Extreme ultraviolet lithography, Deep ultraviolet, Reticles, Defect detection, Binary data, Current controlled current source

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Proceedings Article | 20 October 2006 Paper

The specification of the 45-nm node photomask repair process

Moon Gyu Sung, Sungmin Huh, Byung Cheol Cha, Sungwoon Choi, Woosung Han

Proceedings Volume 6349, 63494H (2006) https://doi.org/10.1117/12.686509

KEYWORDS: Photomasks, Transmittance, Polarization, Critical dimension metrology, Diffractive optical elements, Solids, Etching, Scanning electron microscopy, Semiconducting wafers, Quartz

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Proceedings Article | 20 October 2006 Paper

Real-time monitoring based on comprehensive analysis of the haze environment under the pellicle film

Jaehyuck Choi, Seungyeon Lee, Eunjung Kim, Il-woo Nam, Byung-Cheol Cha, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 6349, 63491I (2006) https://doi.org/10.1117/12.685774

KEYWORDS: Pellicles, Air contamination, Chemical analysis, Photomasks, Fluorine, Quartz, Carbon monoxide, Semiconducting wafers, Environmental monitoring, Gas lasers

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Proceedings Article | 20 May 2006 Paper

Real time analysis of the haze environment trapped between the pellicle film and the mask surface

Jaehyuck Choi, Seungyeon Lee, Yongjin Cho, Sunghun Ji, Byung Cheol Cha, Sung Woon Choi, Woo Sung Han

Proceedings Volume 6283, 62830A (2006) https://doi.org/10.1117/12.681736

KEYWORDS: Air contamination, Pellicles, Photomasks, Fluorine, Chemical analysis, Ions, Argon, Oxygen, Carbon monoxide, Statistical analysis

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Proceedings Article | 4 November 2005 Paper

Implementation of reflected light die-to-die inspection and ReviewSmart to improve 65nm DRAM mask fabrication

Do Young Kim, Won Il Cho, Jin Hyung Park, Dong Hoon Chung, Byung Chul Cha, Seong Woon Choi, Woo Sung Han, Ki Hun Park, Nam Wook Kim, Carl Hess, Weimin Ma, David Kim

Proceedings Volume 5992, 599209 (2005) https://doi.org/10.1117/12.632338

KEYWORDS: Inspection, Defect detection, Photomasks, Contamination, Binary data, Defect inspection, Nanoimprint lithography, Deep ultraviolet, Semiconducting wafers, Mask making

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Proceedings Article | 28 June 2005 Paper

Monitoring system of CD error analysis for the 90-nm node mask manufacturing

Sang-Yong Yu, Soon-Ho Kim, Byung-Cheol Cha, Yong-Hoon Kim, Seung-Woon Choi, Hee-Sun Yoon, Woo-Sung Han

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617080

KEYWORDS: Photomasks, Chromium, Error analysis, Etching, Molybdenum, Manufacturing, Statistical analysis, Mask making, Edge roughness, Lithography

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Proceedings Article | 12 May 2005 Paper

Pellicle process effects in critical dimension fluctuation

Byung-Cheol Cha, Yong-Hoon Kim, Hee-Sun Yoon, Woo-Sung Han

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600281

KEYWORDS: Semiconducting wafers, Photomasks, Pellicles, Critical dimension metrology, Wafer-level optics, Photoresist processing, Lithography, Optics manufacturing, Mask cleaning, Transmittance

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Proceedings Article | 6 December 2004 Paper

Analysis of in-field uniformity on wafer considering exposure margin and MEEF

Byung-Cheol Cha, Seong-Yoon Kim, Soon-Ho Kim, Sang-Yong Yu, Chan-Uk Jeon, Hee-Sun Yoon, Woo-Sung Han

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569383

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Manufacturing, Photoresist processing, Wafer-level optics, Optical testing, Lithography, Transmittance, Error analysis

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Proceedings Article | 22 January 2001 Paper

Improved process control of photomask fabrication in e-beam lithography

Byung-Cheol Cha, Jin-Hong Park, Yo-Han Choi, Jin-Min Kim, Woo-Sung Han, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410730

KEYWORDS: Photomasks, Critical dimension metrology, Electron beam lithography, Process control, Scattering, Control systems, Dry etching, Lithography, Semiconductors, Electronics

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Proceedings Article | 19 July 2000 Paper

Dose latitude dependency on resist contrast in e-beam mask lithography

Byung-Cheol Cha, Seong-Yong Moon, Won-Tai Ki, Seung-Hune Yang, Seong-Woon Choi, Woo-Sung Han, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392058

KEYWORDS: Photoresist processing, Photomasks, Etching, Electron beam lithography, Beam shaping, Critical dimension metrology, Lithography, Dry etching, Gaussian beams, Scattering

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Proceedings Article | 30 December 1999 Paper

Analysis of photomask CD errors depending on development methods

Seong-Yong Moon, Won-Tai Ki, Byung-Cheol Cha, Seong-Woon Choi, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373352

KEYWORDS: Critical dimension metrology, Photomasks, Error analysis, Liquids, Optical lithography, Coating, Semiconductors, Electronics, Lithography, Scattering

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Proceedings Article | 18 December 1998 Paper

Evaluation of the practical use of GHOST technique for various e-beam resists

Byung-Cheol Cha, Jin-Min Kim, Byung Kim, Seong-Woon Choi, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332834

KEYWORDS: Critical dimension metrology, Mask making, Scattering, Photomasks, Electron beam lithography, Electron beams, Modulation transfer functions, Laser scattering, Beam shaping, Raster graphics

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Proceedings Article | 12 February 1997 Paper

Evaluation of process capabilities for 50 keV with rectangular-shaped beam using computer simulation

Byung-Cheol Cha, Yoo-Hyon Kim, Seong-Woon Choi, Yong Yu, Jung-Min Sohn

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301198

KEYWORDS: Beam shaping, Monte Carlo methods, Photoresist processing, Photomasks, Electron beam lithography, Computer simulations, Optical simulations, Algorithm development, Scattering, Lithography

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Proceedings Article | 12 February 1997 Paper

Three-dimensional electron-beam lithography simulator V2.0 for the gigabit-era photomask manufacturing

Yoo-Hyon Kim, Byung-Cheol Cha, Hoong-Joo Lee, Jung-Min Sohn, Jeong-Taek Kong, Sang-Hoon Lee

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301207

KEYWORDS: Photomasks, Manufacturing, Optical simulations, Monte Carlo methods, Scattering, Convolution, Lithography, 3D modeling, Electron beams, Scanning electron microscopy

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Proceedings Article | 27 December 1996 Paper

Correction method for radial effect caused by spin process

Jin-Min Kim, Seong-Woon Choi, Byung-Cheol Cha, Hee-Sun Yun, Jung-Min Sohn

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262833

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Reticles, Manufacturing, Optical lithography, Semiconductors, Electronics, Lithography, Etching

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Proceedings Article | 24 July 1996 Paper

Resolution enhancement with thin Cr for chrome mask making

Byung-Cheol Cha, Seong-Woon Choi, Jin-Min Kim, Hanku Cho, Jung-Min Sohn

Proceedings Volume 2793, (1996) https://doi.org/10.1117/12.245205

KEYWORDS: Critical dimension metrology, Chromium, Etching, Wet etching, Photomasks, Dry etching, Resolution enhancement technologies, Mask making, Electron beam lithography, Anisotropic etching

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Showing 5 of 23 publications

Conference Committee Involvement (5)

Photomask Technology 2024

29 September 2024 | Monterey, California, United States

Photomask Technology 2023

2 October 2023 | Monterey, California, United States

Photomask Technology

27 September 2021 | Online Only, United States

Photomask Technology

17 September 2018 | Monterey, California, United States

Photomask Technology

11 September 2017 | Monterey, California, United States

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