We report experimental bifurcation diagrams (BDs) of an external-cavity semiconductor laser (ECSL). We have focused on the case of the ECSL biased just above threshold to moderate and subjected to feedback from a distant reflector and observed a sequence of bifurcations involving bifurcation cascade as well as intermittency between multiple coexisting attractors. More importantly, we reiterate: the results map out, for the first time to our knowledge, detailed BDs of the ECSL as a function of feedback strength for various external cavity lengths and currents, thus covering a significant portion of parameter space. We have grounded our discussion in extensive theoretical studies based on the Lang-Kobayashi equations and simulated BDs in accordance with our experimental results.
Random bit generation (RBG) with chaotic semiconductor lasers has been extensively studied because of its potential applications in secure communications and high-speed numerical simulations. Researchers in this field have mainly focused on the improvement of the generation rate and the compactness of the random bit generators. In this paper, we experimentally demonstrate the existence of two regimes of fast RBG using a single chaotic laser subjected to delayed optical feedback: the first one is based on the extraction of all min-entropy contained in each random sample, and the second one is to demonstrate a possibility of increasing the generation rate by extracting 55 bits from each variable.