We designed hybrid x-ray detector and simulated using Monte Carlo method. Hybrid x-ray detectors consist of scintillator coupled photoconductor structure. In the hybrid structure, x-ray photons are converted into the light photon in the scintillator layer and light photons are converted into the electric charge in the semiconductor layer. The electric charges can be generated from directly x-ray absorption in the semiconductor material. We design the columnar CsI:Na as scintillator layer and a-Se as photoconductor material. When x-ray photon incident the scintillator layer, the photons are distributed through the scintillator, and then generated light photon influence the semiconductor material. We study the light photon distribution according to the scintillator layer thickness and the detector pixel size which have influence on image resolution.
In this paper, we investigated electrical characteristics of the X-ray detector of mercuric iodide (HgI<sub>2</sub>) film fabricated by PIB(Particle-In-Binder) Method with thicknesses ranging from approximately 200μm to 240μm. In the present study, using I-V measurements, their electrical properties such as leakage current, X-ray sensitivity, and signal-to-noise ratio (SNR),were investigated. The results of our study can be useful in the future design and optimization of direct active-matrix flat-panel detectors (AMFPD) for various digital X-ray imaging modalities.