We present the reliability of high-power laser diodes utilizing hard solder (AuSn) on a conduction-cooled package
(HCCP). We present results of 50 W hard-pulse operation at 8xx nm and demonstrate a reliability of MTTF > 27 khrs
(90% CL), which is an order of magnitude improvement over traditional packaging. We also present results at 9xx nm
with a reliability of MTTF >17 khrs (90% CL) at 75 W. We discuss finite element analysis (FEA) modeling and time
dependent temperature measurements combined with experimental life-test data to quantify true hard-pulse operation.
We also discuss FEA and measured stress profiles across laser bars comparing soft and hard solder packaging.
We describe the performance and reliability of high power vertical diode stacks based on silicon monolithic microchannel
coolers (SiMMs) operating at >1000W/cm<sup>2</sup> CW at 808 and 940nm. The monolithic nature of these stacks makes
them inherently robust and compact. Typical emitting dimensions for a 10-bar stack are ~8.8mm × 10mm with CW
output power up to 1.5kW. Originally developed at Lawrence Livermore National Laboratory and now actively being
developed for commercial applications at Coherent, this technology offers several advantages over current copper-based
micro-channel coolers. These devices do not require use of DI water, strict monitoring and control of the pH level,
careful control of the water velocity, or sealed cooling systems. The need for hydrostatic seals is also drastically reduced.
A typical ten bar stack requires only 2 o-ring seals, compared to 20 such seals for a similar stack using copper microchannel
cooling. Mature and readily available wet etching technology allows for cost effective batch fabrication of the
sub-mount structure while achieving repeatable high precision components based on photolithographic fabrication
Ongoing optimization of epitaxial design within Coherent device engineering has led to a family of high power-conversion-efficiency (PCE) products on conductively cooled packages (CCP) and fiber array packages (FAP). At a 25°C heat sink temperature, the PCE was measured at 71.5% with 75W CW output power on 30% fill-factor (FF) bars with passive cooling. At heat sink temperatures as high as 60°C the PCE of these bars is still maintained above 60%. Powered by such high efficiency 9xx nm diodes, Coherent FAP products have consistently exceeded 55% PCE up to 50W power levels, with 62% PCE demonstrated out of the fiber. High linear-power-density (LPD) operation of 100μm x 7-emitter bars at LPD = 80 mW/μm was also demonstrated. Bars with 7-emitter were measured up to 140W QCW power before catastrophic optical mirror damage (COMD) occurred, which corresponds to a COMD value of 200mW/μm or 2D facet power density of 29.4 MW/cm<sup>2</sup>. Leveraging these improvements has enabled high power FAPs with >90W CW from an 800μm-diameter fiber bundle. Extensive reliability testing has already accumulated 400,000 total real-time device hours at a variety of accelerated and non-accelerated operating conditions. A random failure rate <0.5% per kilo-hours and gradual degradation rate <0.4% per kilo-hours have been observed. For a 30% FF 50W CW 9xx nm bar, this equates to >30,000 hours of median lifetime at a 90% confidence level. More optimized 30% FF 9xx nm bars are under development for power outputs up to 80W CW with extrapolated median lifetimes greater than 20,000 hours.