Al2O3/ZnO alloy films were grown at 100°C using atomic layer deposition (ALD) techniques. It has been previously established that the resistivity of these films can be tuned over a wide range by varying the amount of Zn in the film. Al2O3/ZnO ALD alloy films can therefore be designed with a dielectric constant high enough to provide a large down-state capacitance and a resistivity low enough to promote the dissipation of trapped charges. The material and electrical properties of the Al2O3/ZnO ALD films were investigated using Auger electron spectroscopy (AES), nanoindentation, and mercury probe measurements. Chemical analysis using AES confirmed the presence of both Al and Zn in the alloys. The nanoindentation measurements were used to calculate the Young's modulus and hardness of the films. Pure Al2O3 ALD was determined to have a modulus between 150 and 155 GPa and a hardness of ~8 GPa, while the results for pure ZnO ALD indicated a modulus between 120 and 140 GPa and a hardness of ~5 GPa. An Al2O3/ZnO ALD alloy displayed a modulus of 140-145 GPa, which falls between the two pure films, and a hardness of ~8 GPa, which is similar to the pure Al2O3 film. The dielectric constants of the ALD films were calculated from the mercury probe measurements and were determined to be around 6.8. These properties indicate that the Al2O3/ZnO ALD films can be engineered as a property specific dielectric layer for RF MEMS devices.
A poly-silicon piston micro-mirror array, which has been enhanced with a multilayer coating to exhibit special reflective properties at Cu Kα emission line of 1.54 Å is presented. The micro-mirror array is fabricated using the MEMSCAP PolyMUMPs process and packaged in a ceramic package. The packaged array is coated using atomic layer deposition with an Al2O3/W multilayer. The first Al2O3 layer is thicker than for a normal bilayer pair and prevents the mirror coating from creating an electrical short. This device was tested before and after coating. The snap-down voltage was reduced by half, but qualitatively the mechanical motion remained similar. The fabrication process presented for the Cu Kα wavelength at 1.54 Å can be easily adapted to other optical MEMS and for other wavelengths.