Dr. Carl Georg Frase Profile

Dr. Carl Georg Frase

at Physikalisch-Technische Bundesanstalt

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Author

Publications (18)

Proceedings Article | 3 April 2010 Paper

Monte Carlo modeling of BSE reflection in e-beam writers

H. Alves, K.-P. Johnsen, P. Hahmann, D. Gnieser, C. Frase, H. Bosse

Proceedings Volume 7637, 76371T (2010) https://doi.org/10.1117/12.846517

KEYWORDS: Reflection, Silicon, Teeth, Monte Carlo methods, Semiconducting wafers, Electron beams, Sensors, Objectives, Lithography, Critical dimension metrology

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Proceedings Article | 2 April 2010 Paper

Comparison of different algorithms to determine areas from SEM images

K.-P. Johnsen, C. Frase, H. Bosse, I. Yonekura, M. Higuchi, J. Richter

Proceedings Volume 7638, 76382Q (2010) https://doi.org/10.1117/12.846536

KEYWORDS: Scanning electron microscopy, Monte Carlo methods, Edge detection, Detection and tracking algorithms, Image processing, Photomasks, Image filtering, Algorithm development, Printing, 3D image processing

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We present a comparison of different methods to extract area information from images. Two different physical-based algorithms were tested which determine the areas of arbitrarily shaped 3D nano-structures on wafers or photo-masks (e.g. contact holes) using secondary electron images of scanning electron microscopy (SEM). One of these algorithms, called NANOAREA, was developed by the PTB. The other one is the software package MaskEXPRESS, which was developed by Toppan Printing Co., Ltd. In addition to real SEM images we used Monte Carlo generated SEM images of contact holes of different shapes and sizes. For this, the Monte Carlo simulation program MCSEM, developed at PTB, was applied. MCSEM simulates the electron diffusion and secondary electron generation and transport in solid state material and provides simulated SEM images of arbitrary 3D specimen structures. NANOAREA uses basic image processing routines to estimate the edge position of a structure. Then, one-dimensional profiles which intersect the structure boundary perpendicularly are extracted. A one-dimensional edge detection algorithm determines the edge position on each profile. Finally these detected edge positions are used to calculate the polygon area using the triangle method. NANOAREA showed a very small underestimation of the area of about 0.3 % with regard to the Monte Carlo simulations (i.e. sub-pixel deviation). MaskEXPRESS has a similar approach, however employs a different edge detection algorithm. For quadratic contact holes a very high correlation coefficient r larger than 0.99 of the CDs was seen with an offset of about 0.3 nm for the two tested programs. Here the critical dimension (CD) is defined as the square root of the area. The deviations from the mean offset were smaller than 1 nm over the whole investigated range. For analysis of arbitrarily shaped features we used a double T-shaped structure. Also here almost perfect correlation was found (r = 0.98). The observed mean offset in this case was also about 0.3 nm. The offsets depend on the length of the edge and can vary with the shape of the structure, too. Here we report the excellent correlation of the investigated algorithms and programs to determine area parameters from SEM images. The results found are an important prerequisite for harmonized area measurement based on independent algorithms and pave the way to a standardized approach to area determination and reporting of photomask structures.

Proceedings Article | 2 April 2010 Paper

SEM image modeling using the modular Monte Carlo model MCSEM

K.-P. Johnsen, C. Frase, H. Bosse, D. Gnieser

Proceedings Volume 7638, 76381O (2010) https://doi.org/10.1117/12.846543

KEYWORDS: Monte Carlo methods, Scanning electron microscopy, Chromium, 3D modeling, Sensors, Silica, Scattering, Image acquisition, Electron beams, Photomasks

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Proceedings Article | 27 May 2009 Paper

SEM image contrast modeling for mask and wafer metrology

C. Frase, D. Gnieser, K.-P. Johnsen, W. Häßler-Grohne, R. Tutsch, H. Bosse

Proceedings Volume 7470, 74700M (2009) https://doi.org/10.1117/12.835184

KEYWORDS: Monte Carlo methods, Scanning electron microscopy, Photomasks, Scattering, 3D modeling, Semiconducting wafers, Metrology, Optical simulations, Electron beams, Sensors

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Proceedings Article | 18 March 2009 Paper

Optimization of BSE-detector for e-beam direct write lithography

H. Alves, P. Hahmann, M. Slodowski, C. Frase, D. Gnieser, Klaus-Peter Johnsen, H. Bosse

Proceedings Volume 7271, 72712O (2009) https://doi.org/10.1117/12.814156

KEYWORDS: Sensors, Signal to noise ratio, Monte Carlo methods, Signal detection, Lithography, Etching, Scattering, Electron beams, Direct write lithography, Vestigial sideband modulation

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Proceedings Article | 17 October 2008 Paper

International photomask linewidth comparison by NIST and PTB

J. Potzick, R. Dixson, R. Quintanilha, M. Stocker, A. Vladar, E. Buhr, W. Häßler-Grohne, B. Bodermann, C. G. Frase, H. Bosse

Proceedings Volume 7122, 71222P (2008) https://doi.org/10.1117/12.801435

KEYWORDS: Photomasks, Metrology, Scanning electron microscopy, Calibration, Microscopes, Chromium, Ultraviolet radiation, Standards development, Critical dimension metrology, Interferometers

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Proceedings Article | 2 May 2008 Paper

Influences on accuracy of SEM based CD mask metrology with a view to the 32 nm node

W. Häßler-Grohne, C. Frase, D. Gnieser, H. Bosse, J. Richter, A. Wiswesser

Proceedings Volume 6792, 67920O (2008) https://doi.org/10.1117/12.798783

KEYWORDS: Photomasks, Scanning electron microscopy, Critical dimension metrology, Electrons, Monte Carlo methods, Calibration, Metrology, Silicon, Diffusion, Line edge roughness

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Proceedings Article | 26 March 2008 Paper

E-beam direct write alignment strategies for the next generation node

H. Alves, P. Hahmann, K.-H. Kliem, U. Weidenmueller, S. Jahr, C. Frase, D. Gnieser, H. Bosse, R. Zimmermann, C. Arndt

Proceedings Volume 6921, 69210I (2008) https://doi.org/10.1117/12.771585

KEYWORDS: Optical alignment, Monte Carlo methods, Sensors, Silicon, Signal to noise ratio, Signal detection, Semiconducting wafers, Vestigial sideband modulation, Electron beam direct write lithography, Lithography

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Proceedings Article | 3 May 2007 Paper

Calibration of CD mask standards for the 65-nm node: CoG and MoSi

J. Richter, T. Heins, R. Liebe, B. Bodermann, A. Diener, D. Bergmann, C. Frase, H. Bosse

Proceedings Volume 6533, 65330S (2007) https://doi.org/10.1117/12.736931

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Photomasks, Calibration, Ultraviolet radiation, Microscopy, Atomic force microscopy, Standards development, Opacity, Metrology

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Proceedings Article | 5 April 2007 Paper

A new SEM CD operator verified against Monte Carlo simulations

C. Frase, D. Gnieser, K. Dirscherl, E. Buhr, H. Bosse

Proceedings Volume 6518, 65184P (2007) https://doi.org/10.1117/12.712503

KEYWORDS: Monte Carlo methods, Scanning electron microscopy, Critical dimension metrology, Computer simulations, Image acquisition, Scattering, Optical simulations, Electron beams, Convolution, Metrology

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Proceedings Article | 21 June 2006 Paper

Systematic investigation of CD metrology tool response to sidewall profile variation on a COG test mask

F. Gans, R. Liebe, Th. Heins, J. Richter, W. Häβler-Grohne, C. Frase, B. Bodermann, S. Czerkas, K. Dirscherl, H. Bosse

Proceedings Volume 6281, 62810D (2006) https://doi.org/10.1117/12.692736

KEYWORDS: Scanning probe microscopy, Scanning electron microscopy, Critical dimension metrology, Photomasks, Ultraviolet radiation, Metrology, Microscopy, Opacity, Electrons, Etching

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Proceedings Article | 9 November 2005 Paper

Calibration procedures and application of the PTB photomask CD standard

W. Häßler-Grohne, C.G. Frase, S. Czerkas, K. Dirscherl, B. Bodermann, W. Mirandé, G. Ehret, H. Bosse

Proceedings Volume 5992, 59924O (2005) https://doi.org/10.1117/12.632779

KEYWORDS: Calibration, Ultraviolet radiation, Photomasks, Scanning electron microscopy, Critical dimension metrology, Microscopy, Deep ultraviolet, Standards development, Chromium, Opacity

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Proceedings Article | 16 June 2005 Paper

Results of a round robin measurement on a new CD mask standard

F. Gans, R. Liebe, J. Richter, Th. Schatz, B. Hauffe, F. Hillmann, S. Dobereiner, H.-J. Bruck, G. Scheuring, B. Brendel, L. Bettin, K.-D. Roth, W. Steinberg, G. Schluter, P. Speckbacher, W. Sedlmeier, T. Scherubl, W. Hassler-Grohne, C. Frase, S. Czerkas, K. Dirscherl, B. Bodermann, W. Mirande, H. Bosse

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637313

KEYWORDS: Calibration, Photomasks, Ultraviolet radiation, Scanning electron microscopy, Standards development, Critical dimension metrology, Deep ultraviolet, Chromium, Microscopy, Opacity

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Proceedings Article | 10 May 2005 Paper

Impact of EUV mask pattern profile shape on CD measured by CD-SEM

Uwe Dersch, Arnd Korn, Cornelia Engelmann, Carl Frase, Wolfgang Haessler-Grohne, Harald Bosse, Florian Letzkus, Joerg Butschke

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598644

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Monte Carlo methods, Extreme ultraviolet, Photomasks, Detection and tracking algorithms, Silicon, Electron beams, Extreme ultraviolet lithography, Signal detection

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Proceedings Article | 2 June 2004 Paper

Metrological characterization of new CD photomask standards

Werner Mirande, Bernd Bodermann, W. Haessler-Grohne, Carl Frase, Slawomir Czerkas, Harald Bosse

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568020

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Standards development, Calibration, Photomasks, Chromium, Atomic force microscopy, Microscopy, Microscopes, Ultraviolet radiation

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Proceedings Article | 24 May 2004 Paper

Characterization of new CD photomask standards

Werner Mirande, Bernd Bodermann, Wolfgang Haessler-Grohne, Carl Frase, Slawomir Czerkas, Harald Bosse

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.533734

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Photomasks, Calibration, Standards development, Chromium, Monte Carlo methods, Microscopy, Atomic force microscopy, Opacity

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Proceedings Article | 24 May 2004 Paper

Characterization of a 100-nm 1D pitch standard by metrological SEM and SFM

Wolfgang Haessler-Grohne, Thorsten Dziomba, Carl Frase, Harald Bosse, Jerry Prochazka

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536285

KEYWORDS: Scanning electron microscopy, Atomic force microscopy, Calibration, Line edge roughness, Metrology, Interferometers, Microscopes, Phase shifts, Very large scale integration, Electron microscopes

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Proceedings Article | 9 April 2001 Paper

Comparison of linewidth measurements on COG masks

Harald Bosse, Werner Mirande, Carl Frase, Hans-Juergen Brueck, Sigrid Lehnigk

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425082

KEYWORDS: Scanning electron microscopy, Photomasks, Critical dimension metrology, Chromium, Optical microscopy, Optical testing, Transmittance, Quartz, Microscopy, Adaptive optics

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Showing 5 of 18 publications

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