Mr. Carles Oriach-Font Profile

Carles Oriach-Font

Strategy and Development Director at MONOCROM SL

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Publications (3)

Proceedings Article | 4 March 2022 Presentation + Paper

Effect of stress on the temperature coefficient of solder-free mounted laser diode bars

Carles Oriach-Font, Eduard Carbonell-Sanromà, Gemma Safont-Camprubí, Sandra Tricas-Mendoza, Clàudia Garcia-Cubero

Proceedings Volume 11982, 1198209 (2022) https://doi.org/10.1117/12.2608795

KEYWORDS: Semiconductor lasers, Resistance, Wavelength tuning, Packaging, Polarization, Electro optics, High power diode lasers, Laser packaging, Edge emitting semiconductor lasers

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Proceedings Article | 9 May 2018 Paper

Study of a single emitter laser diode: Pspice model and characterization system

Ramon Borràs, Joaquín del Río, Carles Oriach, Jordi Juliachs

Proceedings Volume 10682, 106821K (2018) https://doi.org/10.1117/12.2304747

KEYWORDS: Semiconductor lasers, Temperature metrology, Photodiodes, Diodes, Spectrometers, Calibration, Climatology, Manufacturing, Laser optics, Optical testing

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This article describes a study of an 8 W optical output power single emitter laser diode. The used device is the WSLX808008-H-T-PD, manufactured by Wavespectrum, with 808 nm emitted wavelength, and with build in NTC (thermistor), photodiode and Peltier cell. First part of the study explains how the Pspice model of the optical output power is proposed and how parameters are obtained, especially considering temperature variations. A short review of related laser diode theory is done including necessary parameters for the model proposal. It is explained the used method to measure the diode's optical output power avoiding temperature drifts (cold measure) and how the method has been implemented in an automatic characterization system using a data acquisition card controlled with LabVIEW, to be applied at different temperatures using a climatic chamber, and to obtain the necessary model parameters values as required by theory. It is also confirmed that the measured parameters are effectively following the expected theoretical behaviour with the temperature variation. With obtained results, model is proposed and programmed in Pspice, and simulation results are compared with measured real results for model validation. In a second part, it has been studied the usage of laser's wavelength drift as a temperature measurement method, and also as a validation of the cold measurement method as it allows the temperature drift supervision during it. Advantages and disadvantages of this method compared with NTC usage are commented. Results using two different spectrometers, comparison with laser diode manufacturer's information and necessary temperature references for the method are commented. In a third part a proposal of an optical output power measurement setup and it use with diode's characterisation system is proposed. System measurements comparison in DC mode with a thermal power meter and related calibration are performed and applied to the automatic characterization system.

Proceedings Article | 18 June 2007 Paper

Improving the measurement of thick and thin films with optical profiling techniques

Cristina Cadevall, Carles Oriach-Font, Roger Artigas, Agustí Pintó, Ferran Laguarta

Proceedings Volume 6616, 66161Z (2007) https://doi.org/10.1117/12.726187

KEYWORDS: Confocal microscopy, Semiconducting wafers, Thin films, Silicon, Objectives, Interfaces, Refractive index, Blue light emitting diodes, Light sources, Profiling

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