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Photoresist characterization for lithography simulation: IV. Processing effects on resist parameters
The course covers the physics of aerial image generation, the chemistry that is responsible for generation of differential solubility in resists, and the effects of processing variables on the final relief image. While optical exposure is the major topic of this course, both electron beam and x-ray exposure are addressed. The physics section provides explanation for partial coherence effects. The chemistry section provides detailed description methods for quantifying resist performance, and the process section uses the lithographic process as an outline for discussion-from wafer cleaning to resist stripping.
This course provides an overview of the theory, materials, and processes involved in lithographic pattern generation using chemically amplified resists. A perspective of the evolution of these materials is the basis of the introduction. The first section addresses the special problem of deep UV resist design and the research that led to deep UV resist development. This includes photoacid generators, high and low activation energy protecting groups, formulation and processing options and the influence of base (quenchers) on resist performance. The course includes a discussion of the chemistry and physics responsible for atmospheric contaminant sensitivity in acid catalyzed systems. There will be a discussion of resolution limits, line edge roughnss and performance trade offs in chemically amplified resists. The course will conclude with the instructor's view of the future.
This course will start by discussing the basics of nanoimprint lithography including a discussion of the various kinds of imprint lithography. It will cover advantages and challenges of using imprint lithography for sub-100 nm and sub-50 nm patterning. The course will focus on step and repeat UV nanoimprint lithography tools and processes. Specific topics addressed will include: tool design and performance, process resolution limits, CD control, etch requirements, overlay alignment, process defects, materials development, and 1X mask infrastructure. Potential applications of the technology will also be discussed.
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