Dr. Carmelo Romeo Profile

Dr. Carmelo Romeo

at Numonyx Agrate

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Author

Publications (9)

Proceedings Article | 2 April 2011 Paper

Mask tuning for process window improvement

Ute Buttgereit, Robert Birkner, Erez Graitzer, Avi Cohen, Benedetta Triulzi, Carmelo Romeo

Proceedings Volume 7985, 79850K (2011) https://doi.org/10.1117/12.896910

KEYWORDS: Critical dimension metrology, Photomasks, Semiconducting wafers, Lithography, Signal attenuation, Scanners, Process control, Reticles, Scatterometry, Calibration

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For the next years optical lithography stays at 193nm with a numerical aperture of 1.35. Mask design becomes more complex, mask and lithography specifications tighten. The k1 factor comes close to 0.25 which leads to a tremendously increased Mask Error Enhancement Factor (MEEF). This means that CD errors on mask are getting highly amplified on wafer. Process control becomes more important than ever. Accurate process control is a key factor to success to maintain a high yield in chip production. One key parameter to ensure a high and reliable functionality for any integrated circuit is the critical dimension uniformity (CDU). There are different contributors which impact the intra-field CD performance at wafer such as mask CD uniformity, scanner fingerprint, resist process etc. In the present work we focus on improvement of mask CD signature which is one of the main contributors to intra-field CD uniformity. The mask CD uniformity has been measured by WLCD32 which measures the CD based on proven aerial image technology. Based on this CD input the CD uniformity was corrected by CDC200^TM and afterwards verified by WLCD32 measurement. The CDC200^TM tool utilizes an ultrafast femto-second laser to write intra-volume shading elements (Shade-In Elements^TM) inside the bulk material of the mask. By adjusting the density of the shading elements, the light transmission through the mask is locally changed in a manner that improves wafer CDU when the corrected mask is printed. Additionally, the impact of the improved CD uniformity on the lithography process window was investigated. Goal of the work is to establish a process flow for mask CD uniformity improvement based on mask CD metrology by WLCD32 and mask CD uniformity control by CDC200^TM and to verify its impact on the lithography process window. The proposed process flow will be validated by wafer prints. It was shown that the WLCD32 has an excellent correlation to wafer data and an outstanding CD repeatability. It provides a reliable input for CD uniformity correction and is the tool of choice to verify the CD uniformity improvement after CDC200^TM treatment.

Proceedings Article | 25 September 2010 Paper

How to match without copying: an approach for APSM mask process matching using aerial imaging

M. Sczyrba, C. Romeo, F. Schurack, T. Castro, B. Connolly

Proceedings Volume 7823, 78231Z (2010) https://doi.org/10.1117/12.865236

KEYWORDS: Photomasks, Semiconducting wafers, Etching, Manufacturing, Quartz, Optical proximity correction, Airborne remote sensing, Image processing, Phase shifts, Phase shifting

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Proceedings Article | 25 September 2010 Paper

Process window improvement on 45nm technology non volatile memory by CD uniformity improvement

Ute Buttgereit, Robert Birkner, Erez Graitzer, Avi Cohen, Benedetta Triulzi, Carmelo Romeo

Proceedings Volume 7823, 78230C (2010) https://doi.org/10.1117/12.865484

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Lithography, Scanners, Scatterometry, Process control, Signal attenuation, Calibration, 193nm lithography

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Proceedings Article | 16 April 2010 Paper

CD uniformity correction on 45-nm technology non-volatile memory

Ute Buttgereit, Robert Birkner, Mark Joyner, Erez Graitzer, Avi Cohen, Hiroyuki Miyashita, Benedetta Triulzi, Alejandro Fasciszewski Zeballos, Carmelo Romeo

Proceedings Volume 7638, 76383K (2010) https://doi.org/10.1117/12.847028

KEYWORDS: Semiconducting wafers, Photomasks, Critical dimension metrology, Calibration, Scanners, Signal attenuation, Airborne remote sensing, Reticles, Metrology, Process control

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Proceedings Article | 6 May 2005 Paper

Device based evaluation of electron projection lithography

Carmelo Romeo, Pietro Cantu, Daniel Henry, Hidekazu Takekoshi, Noriyuki Hirayanagi, Kazuaki Suzuki, Martin McCallum, Hiroshi Fujita, Tadahiko Takikawa, Morihisa Hoga

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.598751

KEYWORDS: Photomasks, Semiconducting wafers, Electron beam lithography, Optical lithography, Manufacturing, Etching, Projection lithography, Electron beams, Silicon, Printing

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Proceedings Article | 1 July 2002 Paper

Power scale-up of the extreme-ultraviolet electric capillary discharge source

Neal Fornaciari, Howard Bender, Dean Buchenauer, Jason Dimkoff, Michael Kanouff, Steve Karim, Carmelo Romeo, Gregory Shimkaveg, William Silfvast, Kenneth Stewart

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472282

KEYWORDS: Extreme ultraviolet, Capillaries, Curtains, Particles, Lamps, Aluminum nitride, Plasma, Diamond, Electrodes, Sensors

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Proceedings Article | 5 July 2000 Paper

IDEAL double exposure method for polylevel structures

Carmelo Romeo, Paolo Canestrari, Antonio Fiorino, Masanobu Hasegawa, Kenji Saitoh, Akiyoshi Suzuki

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389013

KEYWORDS: Critical dimension metrology, Lithography, Photomasks, Optical lithography, Semiconducting wafers, Scanning electron microscopy, Reticles, Optical alignment, Phase shifting, Silicon

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Proceedings Article | 26 July 1999 Paper

Application of a new approach to optical proximity correction

Anja Rosenbusch, Andrew Hourd, Casper Juffermans, Hartmut Kirsch, Frederic Lalanne, Wilhelm Maurer, Carmelo Romeo, Kurt Ronse, Patrick Schiavone, Michal Simecek, Olivier Toublan, Tom Vermeulen, John Watson, Wolfram Ziegler, Rainer Zimmermann

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354378

KEYWORDS: Optical proximity correction, Etching, Semiconducting wafers, Inspection, Deep ultraviolet, Reticles, Critical dimension metrology, Manufacturing, Mathematical modeling, Mask making

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Proceedings Article | 18 December 1998 Paper

New approach to optical proximity correction

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332856

KEYWORDS: Optical proximity correction, Reticles, Photomasks, Inspection, Data modeling, Manufacturing, Deep ultraviolet, Logic, Semiconducting wafers, Etching

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Showing 5 of 9 publications

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