Dr. Chang-Moon Lim Profile

Dr. Chang-Moon Lim

Research Fellow at SK Hynix Inc

SPIE Involvement:

Conference Program Committee | Author

Publications (54)

Proceedings Article | 26 March 2019

Staggered pillar patterning using 0.33NA EUV lithography

Danilo De Simone, Romuald Blanc, Jeroen Van de Kerkhove, Amir-Hossein Tamaddon, Roberto Fallica, Lieve Van Look, Nouredine Rassoul, Frederic Lazzarino, Nadia Vandenbroeck, Pieter Vanelderen, Gian Lorusso, Frieda Van Roey, Anne-Laure Charley, Geert Vandenberghe, Kurt Ronse, Kilyoung Lee, Junghyung Lee, Sarohan Park, Chang-Moon Lim, Chan-Ha Park

Proc. SPIE. 10957, Extreme Ultraviolet (EUV) Lithography X

KEYWORDS: Optical lithography, Etching, Image processing, Image analysis, Scanning electron microscopy, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Failure analysis

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Proceedings Article | 26 March 2019

Massive metrology and failure identification for DRAM applications (Conference Presentation)

Harm Dillen, Dorothe Oorschot, Marleen Kooiman, Willem van Mierlo, Ziyang Wang, Kang-San Lee, Jin-Woo Lee, Ruochong Fei, Shu-Yu Lai, Marc Kea, Inhwan Lee, Hwan Kim, Junghyun Kang, Jaehee Hwang, Chang-Moon Lim

Proc. SPIE. 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII

KEYWORDS: Metrology, Printing, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Failure analysis

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Introduction and problem statement Given that EUV lithography allows printing smaller Critical Dimension (CD) features, it can result in non-normal distributed CD populations on ADI wafers [Civay SPIE AL 2014], leading to errors in predicted failure rates [Bristol SPIE AL 2017]. As a result, there is a need to quantify the actual behavior of the CD population extremes by means of massive metrology [Dillen EUVL 2018]. Not only allows this to study the CD distribution, we can in parallel also evaluate pattern quality and the failure mechanisms leading to defects. This massive metrology method provides an accurate failure rate based on CD, and enables new possibilities to define a failure rate based on different metrics in a single measurement. Method We analyze the CD uniformity of pillars in polar coordinates using a global waveform based thresholding strategy. In conjunction with this CD information, we also evaluated the print quality of each individual measured feature. Fig 1. In line detected anomalies and failure definitions As we gather this information during the measurement of CD, we can limit the additional measurement overhead to neglectable levels. Application and outlook We will show how we can leverage this to determine a defect based process window and relations of failure mechanisms through process conditions (see figure 2). When we take failures in a CH dataset into account, we illustrate the effect on the shape of a large dataset distribution in figure 3. Fig 2. Defect identification for a through exposure dose experiment of pillars. For each condition >13k pillars where measured. The plot clearly shows an asymmetric behavior due to different failure mechanisms at low and high energy. The 2 vertical lines at relative energies 0.93 and 1.05 times nominal indicate the low defect process window. Fig 3. A distribution of measured regular grid dense CH. The red line is the unfiltered CD data, the blue line is the shape of the distribution after filtering individual CH measurements that have a much lower contrast than expected.

Proceedings Article | 2 May 2018

Illumination source optimization in EUV lithography for staggered contact holes and pillars for DRAM applications

Jo Finders, Ziyang Wang, John McNamara, Gijsbert Rispens, Pär Broman, Chang-Nam Ahn, Inhwan Lee, Hwan Kim, Junghyun Kang, Yoonsuk Hyun, Chang-Moon Lim

Proc. SPIE. 10583, Extreme Ultraviolet (EUV) Lithography IX

KEYWORDS: Diffraction, Reticles, Optical lithography, Lithographic illumination, Printing, Photomasks, Extreme ultraviolet lithography, Nanoimprint lithography, Semiconducting wafers, Fiber optic illuminators

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Proceedings Article | 1 May 2018

EUV contact-hole local CD uniformity optimization for DRAM storage node application

Mijung Lim, Chang-Moon Lim, Chang-Nam Ahn, Daniel Park, Anita Fumar-Pici, Nak Seong

Proc. SPIE. 10583, Extreme Ultraviolet (EUV) Lithography IX

KEYWORDS: Diffraction, Lithographic illumination, Cadmium, Photomasks, Extreme ultraviolet, Compact discs, Critical dimension metrology, Semiconducting wafers, Stochastic processes, Diffraction gratings

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Proceedings Article | 5 May 2017

Study on restricting factors of practical k1 limit in 0.33NA EUV lithography

Sunyoung Koo, Mijung Lim, Inhwan Lee, Sarohan Park, Jinwoo Choi, Yoonsuk Hyun, Chang-Moon Lim

Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII

KEYWORDS: Diffraction, Optical lithography, Contamination, Lithographic illumination, Calibration, Scanners, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Immersion lithography, Nanoimprint lithography, Stray light, Stochastic processes, Fiber optic illuminators

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Proceedings Article | 18 March 2016

Extension of practical k1 limit in EUV lithography

Sarohan Park, Inwhan Lee, Sunyoung Koo, Junghyung Lee, Chang-Moon Lim

Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII

KEYWORDS: Lithography, Optical lithography, Lithographic illumination, Scanners, Photomasks, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Source mask optimization, Nanoimprint lithography, Critical dimension metrology, Semiconducting wafers, Stochastic processes, Resolution enhancement technologies

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Proceedings Article | 18 March 2016

Study on RLS trade-off resist upgrade for production ready EUV lithography

Junghyung Lee, Jieun Kim, Seunguk Jeong, Mijung Lim, Sunyoung Koo, Chang-Moon Lim, Young-Sik Kim

Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII

KEYWORDS: Optical lithography, Ultraviolet radiation, Ions, Manufacturing, Extreme ultraviolet, Extreme ultraviolet lithography, Source mask optimization, Nanoimprint lithography, Line edge roughness, Neodymium

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Proceedings Article | 18 March 2016

Improvement of EUV mix-match overlay for production implementation

Sarohan Park, ByoungHoon Lee, Byong-Seog Lee, Inwhan Lee, Chang-Moon Lim

Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII

KEYWORDS: Lithography, Optical parametric oscillators, Optical lithography, Scanners, Particles, Error analysis, Extreme ultraviolet, Extreme ultraviolet lithography, Double patterning technology, Semiconducting wafers, Overlay metrology, EUV optics

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Proceedings Article | 7 April 2015

Understanding of stochastic noise

Seo-Min Kim, Chang-Moon Lim, Mi-Rim Jung, Young-Sik Kim, Won-Taik Kwon, Chang-Nam Ahn, Kyu-Tae Sun, Anita Fumar-Pici, Alek Chen

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Lithography, Particles, Photomasks, Extreme ultraviolet, Line width roughness, Immersion lithography, Critical dimension metrology, Photoresist processing, Stochastic processes, Absorption

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Proceedings Article | 6 April 2015

EUV mask particle adders during scanner exposure

Yoonsuk Hyun, Jinsoo Kim, Kyuyoung Kim, Sunyoung Koo, SeoMin Kim, Youngsik Kim, Changmoon Lim, Nohjung Kwak

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Reticles, Scanners, Particles, Inspection, Scanning electron microscopy, Pellicles, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

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Proceedings Article | 16 March 2015

EUV contact holes and pillars patterning

Sarohan Park, Danilo De Simone , Zheng Tao, Geert Vandenberghe, Yoonsuk Hyun, Seo-Min Kim, Chang-Moon Lim

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Optical lithography, Image processing, Scanners, Electroluminescence, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Photoresist processing, Stochastic processes

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Proceedings Article | 17 April 2014

EUV stochastic noise analysis and LCDU mitigation by etching on dense contact-hole array patterns

Seo Min Kim, Sunyoung Koo, Jun-Taek Park, Chang-Moon Lim, Myoungsoo Kim, Chang-Nam Ahn, Anita Fumar-Pici, Alek Chen

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Metrology, Liquid phase epitaxy, Etching, Error analysis, Scanning electron microscopy, Printing, Photomasks, Extreme ultraviolet, Critical dimension metrology, Stochastic processes

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Proceedings Article | 17 April 2014

EUV overlay strategy for improving MMO

Byoung-Hoon Lee, Inhwan Lee, Yoonsuk Hyun, SeoMin Kim, Chang-Moon Lim, Myoung Soo Kim, Sung-ki Park

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Lithography, Interferometers, Manufacturing, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Overlay metrology, EUV optics

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Proceedings Article | 17 April 2014

193nm inspection of extreme ultraviolet mask absorber defect

Guk-Jin Kim, In-Seon Kim, Michael Yeung, Chang-Moon Lim, Hye-Keun Oh

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Antireflective coatings, Multilayers, Defect detection, Inspection, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Defect inspection, Oxidation

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Proceedings Article | 2 April 2014

Investigation on reticle heating effect induced overlay error

Mijung Lim, Geunhak Kim, SeoMin Kim, Byounghoon Lee, Seokkyun Kim, Chang-moon Lim, Myoungsoo Kim, Sungki Park

Proc. SPIE. 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII

KEYWORDS: Semiconductors, Reticles, Optical parametric oscillators, Scanners, Distortion, Transmittance, Photomasks, Semiconducting wafers, HVAC controls, Overlay metrology

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Proceedings Article | 3 April 2012

A scatterometry-based CD uniformity control solution for Spacer Patterning Technology

Jongsu Lee, Chang Moon Lim, Chan-Ho Ryu, Myoungsoo Kim, Hyosang Kang, Hugo Cramer, Noelle Wright, Birgitt Hepp, Liesbeth van Reijnen, Hans van der Laan, Maryana Marun, Peter ten Berge

Proc. SPIE. 8324, Metrology, Inspection, and Process Control for Microlithography XXVI

KEYWORDS: Metrology, Optical lithography, Etching, Control systems, Scatterometry, Process control, Double patterning technology, Deposition processes, Critical dimension metrology, Semiconducting wafers

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Proceedings Article | 23 March 2012

Study on CD variation in the vicinity of the exposure field edge in EUV lithography

Chang-Moon Lim, Seokkyun Kim, Jun-Taek Park, Yoonsuk Hyun, Jong-Su Lee, Sunyoung Koo, Myoungsoo Kim, Hyosang Kang

Proc. SPIE. 8322, Extreme Ultraviolet (EUV) Lithography III

KEYWORDS: Semiconductors, Reticles, Deep ultraviolet, Scanners, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical proximity correction, Critical dimension metrology, EUV optics

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Proceedings Article | 23 March 2012

Effect of extreme-ultraviolet pellicle support to patterned mask

Ki-ho Ko, Eun-Jin Kim, Ji-Won Kim, Jun-Taek Park, Chang-Moon Lim, Hye-keun Oh

Proc. SPIE. 8322, Extreme Ultraviolet (EUV) Lithography III

KEYWORDS: Thin films, Lithography, Data modeling, Silicon, Distortion, Computer simulations, Pellicles, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography

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Proceedings Article | 13 March 2012

Overlay metrology for low-k1: challenges and solutions

Jens Neumann, Jongsu Lee, Kiho Yang, Byounghoon Lee, Taehyeong Lee, Jeongsu Park, Chang-moon Lim, Donggyu Yim, Sungki Park, Eric Janda, Kaustuve Bhattacharyya, Chan-ho Ryu, Young-Hong Min, Kiki Rhe, Bernd Geh

Proc. SPIE. 8326, Optical Microlithography XXV

KEYWORDS: Lithography, Diffraction, Metrology, Data modeling, Inspection, Computer simulations, Printing, Semiconducting wafers, Overlay metrology, Diffraction gratings

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Proceedings Article | 20 April 2011

Diffraction-based overlay for spacer patterning and double patterning technology

Byoung Hoon Lee, JeongSu Park, Jongsu Lee, Sarohan Park, ChangMoon Lim, Dong-Gyu Yim, Sungki Park, Chan-Ho Ryu, Stephen Morgan, Maurits van de Schaar, Andreas Fuchs, Kaustuve Bhattacharyya

Proc. SPIE. 7971, Metrology, Inspection, and Process Control for Microlithography XXV

KEYWORDS: Lithography, Diffraction, Metrology, Optical lithography, Scanning electron microscopy, Double patterning technology, Semiconducting wafers, Overlay metrology, Resolution enhancement technologies, Diffraction gratings

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Proceedings Article | 8 April 2011

Comparison between ADT and PPT for 2X DRAM patterning

Sunyoung Koo, Jun-Taek Park, Yoonsuk Hyun, Keundo Ban, Seokkyun Kim, Chang-Moon Lim, Donggyu Yim, Sungki Park

Proc. SPIE. 7969, Extreme Ultraviolet (EUV) Lithography II

KEYWORDS: Lithography, Optical lithography, Lithographic illumination, Scanners, Photomasks, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, High volume manufacturing, Nanoimprint lithography

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Proceedings Article | 6 April 2011

Feasibility of EUVL thin absorber mask for sub-32nm half pitch patterning

Yoonsuk Hyun, Juntaek Park, Sunyoung Koo, Yongdae Kim, Seokkyun Kim, Changmoon Lim, Donggyu Yim, Sungki Park

Proc. SPIE. 7969, Extreme Ultraviolet (EUV) Lithography II

KEYWORDS: Reticles, Optical lithography, Reflectivity, Scanning electron microscopy, Printing, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Semiconducting wafers

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Proceedings Article | 22 March 2010

Practical flare compensation strategy for DRAM device

Chang-Moon Lim, Jun-Taek Park, James Moon, Sunyoung Koo, Yoonsuk Hyun, Hyeong Soo Kim, Donggyu Yim, Sung-Ki Park

Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography

KEYWORDS: Point spread functions, Optical lithography, Light scattering, Surface roughness, Projection systems, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Convolution, Stray light

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Proceedings Article | 20 March 2010

Feasibility of EUVL thin absorber mask for minimization of mask shadowing effect

Yoonsuk Hyun, Juntaek Park, Sunyoung Koo, Yongdae Kim, Keundo Ban, Seokkyun Kim, Changmoon Lim, Donggyu Yim, Hyeongsoo Kim, Sungki Park

Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography

KEYWORDS: Reticles, Silicon, Reflectivity, Printing, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Critical dimension metrology, Ruthenium

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Proceedings Article | 11 December 2009

Comparison of simulation and wafer results for shadowing and flare effect on EUV alpha demo tool

James Moon, Cheol-Kyun Kim, Byoung-Sub Nam, Byong-Ho Nam, Chang-Moon Lim, Donggyu Yim, Sung-Ki Park

Proc. SPIE. 7520, Lithography Asia 2009

KEYWORDS: Lithography, Point spread functions, Calibration, Scanning electron microscopy, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Wafer testing

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Proceedings Article | 20 March 2009

Evaluation of shadowing and flare effect for EUV tool

James Moon, Cheol-Kyun Kim, Byoung-Sub Nam, Byoung-Ho Nam, Yoon-Suk Hyun, Suk-Kyun Kim, Chang-Moon Lim, Yong-Dae Kim, Mun-Sik Kim, Yong-Kyoo Choi, Chang-Reol Kim, Donggyu Yim

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Lithography, Silicon, Light scattering, Scanning electron microscopy, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Wafer testing

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Proceedings Article | 18 March 2009

Comparative study of DRAM cell patterning between ArF immersion and EUV lithography

Tae-Seung Eom, Sarohan Park, Jun-Taek Park, Chang-Moon Lim, Sunyoung Koo, Yoon-Suk Hyun, HyeongSoo Kim, Byung-Ho Nam, Chang-Reol Kim, Seung-Chan Moon, Noh-Jung Kwak, Sungki Park

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Lithography, Optical lithography, Etching, Scanners, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Double patterning technology, Immersion lithography, Critical dimension metrology

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In this paper, we will present comparison of DRAM cell patterning between ArF immersion and EUV lithography which will be the main stream of DRAM lithography. Assuming that the limit of ArF immersion single patterning is around 40nm half pitch, EUV technology is positioned on essential stage because development stage of device manufacturer is going down sub-40nm technology node. Currently lithography technology, in order to improve the limitation of ArF immersion lithography, double patterning technology (DPT) and spacer patterning technology (SPT) have been examined intensively. However, double patterning and spacer patterning technology are not cost-effective process because of complexity of lithography process such as many hard mask stacks and iterative litho, etch process. Therefore, lithography community is looking forward to improving maturity of EUVL technology. In order to overcome several issues on EUV technology, many studies are needed for device application. EUV technology is different characteristics with conventional optical lithography which are non-telecentricity and mask topography effect on printing performance. The printed feature of EUV is shifted and biased on the wafer because of oblique illumination of the mask. Consequently, target CD and pattern position are changed in accordance with pattern direction, pattern type and slit position of target pattern.1 For this study, we make sub-40nm DRAM mask for ArF immersion and EUV lithography. ArF attenuated PSM (Phase Shift Mask) and EUV mask (LTEM) are used for this experiment; those are made and developed by in-house captive maskshop. Simulation and experiment with 1.35NA ArF immersion scanner and 0.25NA EUV full field scanner are performed to characterize EUV lithography and to compare process margin of each DRAM cell. Two types of DRAM cell patterns are studied; one is an isolation pattern with a brick wall shape and another is a storage node pattern with contact hole shape. Line and space pattern is also studied through 24nm to 50nm half pitch for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE and Solid-EUV are also used in order to study characteristics of EUV patterning through rigorous EMF simulation. We also investigated shadowing effect according to pattern shape and design rule respectively. We find that vertical to horizontal bias is around 2nm on 32nm to 40nm half pitch line and space pattern. In the case of DRAM cell, we also find same result with line and space pattern. In view of mask-making consideration, we optimize absorber etch process. So we acquire vertical absorber profile and mask MTT(Mean To Target) within 10% of target CD through several pitch. Process windows and mask error enhancement factors are measured with respect to several DRAM cell pattern. In the case of one dimensional line and space and two dimensional brick wall pattern, vertical pattern shows the best performance through various pitches because of lower shadowing effect than horizontal pattern. But in case of contact hole DRAM cell pattern such as storage node pattern, it has bigger MEF value than one or two dimensional pattern because of independency of shadowing effect. Finally, we compare with 2x, 3x and 4x DRAM cell patterning performance in terms of pattern fidelity, slit CD uniformity and shadowing effect.

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Proceedings Article | 18 March 2009

EUV-patterning characterization using a 3D mask simulation and field EUV scanner

Jun-Taek Park, Yoon-Suk Hyun, Chang-Moon Lim, Tae-Seung Eom, Sunyoung Koo, Sarohan Park, Suk-Kyun Kim, Keun-Do Ban, Hyun-Jo Yang, Chang-Il Oh, Byung-Ho Nam, Chang-Reol Kim, HyeongSoo Kim, Seung-Chan Moon, Sungki Park

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Optical lithography, Deep ultraviolet, Scanners, Silicon, Laser scanners, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers

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Proceedings Article | 24 March 2008

Alignment system and process optimization for improvement of double patterning overlay

Won-kwang Ma, Jung-hyun Kang, Chang-moon Lim, HyeongSoo Kim, Seung-chan Moon, Sanjay Lalbahadoersing, Seung-chul Oh

Proc. SPIE. 6922, Metrology, Inspection, and Process Control for Microlithography XXII

KEYWORDS: Lithography, Reticles, Data modeling, Etching, Photomasks, Extreme ultraviolet, Double patterning technology, Optical alignment, Semiconducting wafers, Overlay metrology

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Proceedings Article | 7 March 2008

Comparative study of binary intensity mask and attenuated phase shift mask using hyper-NA immersion lithography for sub-45nm era

Tae-Seung Eom, Jun-Taek Park, Jung-Hyun Kang, Sarohan Park, Sunyoung Koo, Jin-Soo Kim, Byoung-Hoon Lee, Chang-Moon Lim, HyeongSoo Kim, Seung-Chan Moon

Proc. SPIE. 6924, Optical Microlithography XXI

KEYWORDS: Lithography, Diffraction, Polarization, Scanners, Chromium, Pellicles, Photomasks, Immersion lithography, Binary data, Phase shifts

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In this paper, we will present comparison of attenuated phase shift mask and binary intensity mask at hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination in hyper-NA imaging. One att.PSM (Phase Shift Mask) and three types of binary intensity mask are used for this experiment; those are ArF att.PSM ( MoSi:&angst; ), thick Cr ( 1030&angst; ) BIM (Binary Intensity Mask), thin Cr ( 590&angst; ) BIM and multi layer ( Cr:740&angst; / MoSi:930&angst; ) BIM. Simulation and experiment with 1.35NA immersion scanner are performed to study influence of mask structure, process margin and effect of polarization. Two types of DRAM cell patterns are studied; one is an isolation pattern with a brick wall shape and another is a storage node pattern with contact hole shape. Line and space pattern is also studied through 38nm to 50nm half pitch for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE is also used in order to study the influence of mask structure and polarization effect through rigorous EMF simulation. Transmission and polarization effects of zero and first diffraction order are simulated for both att.PSM and BIM. First and zero diffraction order polarization are shown to be influenced by the structure of masking film. As pattern size on mask decreases to the level of exposure wavelength, incident light will interact with mask pattern, and then transmittance changes for mask structure. Optimum mask bias is one of the important factors for lithographic performance. In the case of att.PSM, negative bias shows higher image contrast than positive one, but in case of binary intensity mask, positive bias shows better performance than negative one. This is caused by balance of amplitude between first diffraction order and zero diffraction order light. Process windows and mask error enhancement factors are measured with respect to various design rules, i.e., different k1 levels at fixed NA. In the case of one dimensional line and space pattern, thick Cr BIM shows the best performance through various pitches. But in case of two dimensional DRAM cell pattern, it is difficult to find out the advantage of BIM for sub-45nm. It needs further study for two dimensional patterns. Finally, it was observed that thick Cr binary intensity mask for sub-45nm has advantage for one dimensional line and space pattern.

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Proceedings Article | 12 April 2007

Improvement of front-end process overlay in 60nm DRAM

Young-Sun Hwang, Won-Kwang Ma, Eung-Kil Kang, Chang-Moon Lim, Seung-Chan Moon, Sang-Jin An, Kyu-Kab Rhe

Proc. SPIE. 6518, Metrology, Inspection, and Process Control for Microlithography XXI

KEYWORDS: Lithography, Signal processing, Thermal effects, Process control, Double patterning technology, Optical alignment, Semiconducting wafers, Overlay metrology, Resolution enhancement technologies, Chemical mechanical planarization

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ArF immersion lithography and RETs (Resolution Enhancement Technology) are the most promising technology for sub 60nm patterning. As the device size shrinks, overlay accuracy has become more important due to small overlap margin between layers. Overlay performance of immersion process is affected by thermal effect due to water evaporation, so it shows worse performance than dry process and CD variation in DPT (Double Patterning Technology) process is affected by overlay performance. So improvement of overlay accuracy became hot issue in realization of future lithography technology, especially immersion process and double patterning process. Current status of lithography tool shows 10 ~ 12nm (3sigma) overlay control in front-end process, but this overlay performance is not sufficient for future technology. In this paper, we investigated the causes of overlay variation and tried to improve overlay accuracy in front-end process of 60nm DRAM device. Therefore, the results in this study can be implemented to new technology such as immersion and double patterning. First, overlay residual error factor is classified into two types, one is the equipment error factor and the other is process error factor. Equipment error can be divided into SCMV (Single Chuck Mean Variation) by stage accuracy variation, chuck to chuck mean and correction factor variation by using twin chuck etc. And process error can be divided into alignment signal variation by chuck defocus (stage particle by contamination), increase of overlay residual by material deposition, alignment key height variation by etch loading effect, overlay vernier attack by CMP (Chemical Mechanical Polishing) process etc. We analyzed causes of these overlay error factor and we applied new system and process to improve these overlay error factor. In conclusion, we were able to find where overlay error comes from and how to improve overlay accuracy in 60nm device, and we got good overlay performance using new alignment system and process optimization.

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Proceedings Article | 5 April 2007

Hardware, materials, and parameters optimization for improvement of immersion overlay

Won-Kwang Ma, Young-sun Hwang, Eung-kil Kang, Sarohan Park, Jung-Hyun Kang, Chang-moon Lim, Seung-chan Moon

Proc. SPIE. 6518, Metrology, Inspection, and Process Control for Microlithography XXI

KEYWORDS: Calibration, Scanners, Materials processing, Photomasks, Immersion lithography, Optical alignment, Thin film coatings, Semiconducting wafers, Overlay metrology, Protactinium

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Proceedings Article | 26 March 2007

Issues and challenges of double patterning lithography in DRAM

Seo-Min Kim, Sun-Young Koo, Jae-Seung Choi, Young-Sun Hwang, Jung-Woo Park, Eung-Kil Kang, Chang-Moon Lim, Seung-Chan Moon, Jin-Woong Kim

Proc. SPIE. 6520, Optical Microlithography XX

KEYWORDS: Lithography, Optical lithography, Etching, Composites, Scanning electron microscopy, Photomasks, Double patterning technology, Neodymium, Photomicroscopy, 193nm lithography

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Proceedings Article | 26 March 2007

Hyper NA polarized imaging of 45nm DRAM

Chang-Moon Lim, Sarohan Park, Yoon-Suk Hyun, Jin-Soo Kim, Tae-Seung Eom, Jun-Taek Park, Seung-Chan Moon, Jin-Woong Kim

Proc. SPIE. 6520, Optical Microlithography XX

KEYWORDS: Lithography, Optical lithography, Lithographic illumination, Polarization, Birefringence, Scanners, Transmittance, Photomasks, Immersion lithography, Critical dimension metrology

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Proceedings Article | 21 March 2007

Characteristics and prevention of pattern collapse in EUV lithography

Wook Chang, Eun-Jin Kim, Young-Min Kang, Seung-Wook Park, Chang-Moon Lim, Ki-Tak Won, Jai-Soon Kim, Hye-Keun Oh

Proc. SPIE. 6517, Emerging Lithographic Technologies XI

KEYWORDS: Semiconductors, Lithography, Optical lithography, Deep ultraviolet, Ultraviolet radiation, Extreme ultraviolet, Extreme ultraviolet lithography, Adhesives, Autoregressive models, Liquids

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Proceedings Article | 29 March 2006

Double exposure technology using silicon containing materials

Sungkoo Lee, Jaechang Jung, Sungyoon Cho, Chang-Moon Lim, Cheolkyu Bok, Hyeongsoo Kim, Seungchan Moon, Jinwoong Kim

Proc. SPIE. 6153, Advances in Resist Technology and Processing XXIII

KEYWORDS: Lithography, Optical lithography, Etching, Silicon, Coating, Reflectivity, Photomasks, Extreme ultraviolet, Neodymium

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Proceedings Article | 24 March 2006

Application of scatterometry to measure organic material profile

Sunyoung Koo, Keundo Ban, Chang-moon Lim, Cheolkyu Bok, Seung-Chan Moon, Jinwoong Kim

Proc. SPIE. 6152, Metrology, Inspection, and Process Control for Microlithography XX

KEYWORDS: Metrology, Etching, Tungsten, Silicon, Scanning electron microscopy, Organic materials, Scatterometry, Critical dimension metrology, Semiconducting wafers, Scatter measurement

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Proceedings Article | 24 March 2006

Improvement of alignment and overlay accuracy on amorphous carbon layers

Young-Sun Hwang, Eung-kil Kang, Ki-lyoung Lee, Keun-Do Ban, Cheol-Kyu Bok, Chang-Moon Lim, Hyeong-Soo Kim, Seung-Chan Moon

Proc. SPIE. 6152, Metrology, Inspection, and Process Control for Microlithography XX

KEYWORDS: Carbon, Lithography, Optical lithography, Reflection, Etching, Photomasks, Optical alignment, Photoresist processing, Resolution enhancement technologies, Absorption

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Proceedings Article | 20 March 2006

Heterogeneous diffusion model for simulation of resist process

Chang Moon Lim, Jun Taek Park, Seo Min Kim, Hyeong Soo Kim, Seung Chan Moon

Proc. SPIE. 6154, Optical Microlithography XIX

KEYWORDS: Lithography, Optical lithography, Image processing, Diffusion, Optical proximity correction, Critical dimension metrology, Photomicroscopy, Photoresist processing, Performance modeling, Process modeling

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Proceedings Article | 15 March 2006

Positive and negative tone double patterning lithography for 50-nm flash memory

Chang-Moon Lim, Seo-Min Kim, Young-Sun Hwang, Jae-Seung Choi, Keun-Do Ban, Sung-Yoon Cho, Jin-Ki Jung, Eung-Kil Kang, Hee-Youl Lim, Hyeong-Soo Kim, Seung-Chan Moon

Proc. SPIE. 6154, Optical Microlithography XIX

KEYWORDS: Lithography, Optical lithography, Etching, Photomasks, Double patterning technology, Critical dimension metrology, Neodymium, Photoresist processing, Semiconducting wafers, Overlay metrology

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Proceedings Article | 12 May 2005

Study on the shoreline for water immersion ArF lithography

Chang-Moon Lim, Tae-Seung Eom, Seo-Min Kim, Cheolkyu Bok, Won-Kwang Ma, Gyu-Dong Park, Seung-Chan Moon, Jin-Woong Kim

Proc. SPIE. 5754, Optical Microlithography XVIII

KEYWORDS: Lithography, Diffraction, Refractive index, Contamination, Lithographic illumination, Reliability, Scanning electron microscopy, Immersion lithography, Critical dimension metrology, Semiconducting wafers

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Proceedings Article | 4 May 2005

Top antireflective coating process for immersion lithography

Jae Chang Jung, Sung Koo Lee, Keun Do Ban, Seo Min Kim, Cheolkyu Bok, Chang Moon Lim, Seung Chan Moon

Proc. SPIE. 5753, Advances in Resist Technology and Processing XXII

KEYWORDS: Lithography, Antireflective coatings, Light sources, Optical lithography, Particles, Coating, Immersion lithography, Photoresist processing, Semiconducting wafers, Resolution enhancement technologies

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Proceedings Article | 4 May 2005

0.31k1 ArF lithography for 70-nm DRAM

Cheolkyu Bok, Ki-Lyoung Lee, Jun-Taek Park, Young-Sun Hwang, Tae-Seung Eom, Seo-Min Kim, Geunsu Lee, Jae-Chang Jung, Chang-Moon Lim, Seung-Chan Moon, Jin-Woong Kim

Proc. SPIE. 5753, Advances in Resist Technology and Processing XXII

KEYWORDS: Lithography, Lithographic illumination, Etching, Image processing, Electroluminescence, Photomasks, Optical proximity correction, Photoresist processing, Semiconducting wafers, Resolution enhancement technologies

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Proceedings Article | 4 May 2005

New shrinkage technology for nano-contact hole formation

Geunsu Lee, Jungwoo Park, Wonwook Lee, Cheolkyu Bok, Changmoon Lim, Sungchan Moon

Proc. SPIE. 5753, Advances in Resist Technology and Processing XXII

KEYWORDS: Nanotechnology, Polymers, Crystals, Interfaces, Hydrogen, Coating, Resistance, Photoresist materials, Thin film coatings, Semiconducting wafers

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Proceedings Article | 4 May 2005

Origin of LER and its solution

Geunsu Lee, Tae-Seung Eom, Cheolkyu Bok, Changmoon Lim, Seung-Chan Moon, Jinwoong Kim

Proc. SPIE. 5753, Advances in Resist Technology and Processing XXII

KEYWORDS: Lithography, Polymers, Scanning electron microscopy, Photomasks, Line width roughness, Line edge roughness, Photoresist processing, Semiconducting wafers, Resist chemistry, Photoresist developing

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Proceedings Article | 28 May 2004

Feasibility studies of ArF chromeless mask (CLM) for sub-80-nm era

Tae-Seung Eom, Chang-Moon Lim, Min Sung, Seung Chan Moon, Ki Shin

Proc. SPIE. 5377, Optical Microlithography XVII

KEYWORDS: Lithography, Optical lithography, Lithographic illumination, Etching, Quartz, Image quality, Transmittance, Photomasks, Optical proximity correction, Resolution enhancement technologies

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Proceedings Article | 28 May 2004

Diffraction analysis of customized illumination technique

Chang-Moon Lim, Seo-Min Kim, Tae-Seung Eom, Seung Chan Moon, Ki Shin

Proc. SPIE. 5377, Optical Microlithography XVII

KEYWORDS: Lithography, Diffraction, Spectrum analysis, Lithographic illumination, Fourier transforms, Image acquisition, Mathematics, Photomasks, Semiconducting wafers, Lead

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Proceedings Article | 28 May 2004

Double exposure to reduce overall line-width variation of 80-nm DRAM gate

Won Ma, Chang-Moon Lim, Se Oh, Byung Nam, Seung Chan Moon, Ki Shin

Proc. SPIE. 5377, Optical Microlithography XVII

KEYWORDS: Wafer-level optics, Neck, Lithography, Scanners, Transistors, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Optical calibration, Fiber optic illuminators

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Proceedings Article | 26 June 2003

Comparative study of chromeless and attenuated phase-shift mask for 0.3-k1 ArF lithography of DRAM

Tae-Seung Eom, Chang Lim, Seo-Min Kim, Hee-Bom Kim, Se-Young Oh, Won-Kwang Ma, Seung-Chan Moon, Ki Shin

Proc. SPIE. 5040, Optical Microlithography XVI

KEYWORDS: Lithography, Diffraction, Optical lithography, Etching, Quartz, Transmittance, Photomasks, Mask making, Critical dimension metrology, Phase shifts

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Proceedings Article | 30 July 2002

Intrafield CD variation by stray light from neighboring field

Chang-Moon Lim, Jung-Ho Song, Sung-Soo Woo, Ki-Sung Kwon, Chang-Nam Ahn, Ki-Soo Shin

Proc. SPIE. 4691, Optical Microlithography XV

KEYWORDS: Optical lithography, Lithographic illumination, Scanners, Light scattering, Chromium, Photomasks, Critical dimension metrology, Stray light, Semiconducting wafers, Binary data

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Proceedings Article | 26 July 1999

Practical methodology of optical proximity correction in subquarter-micron lithography

Chang-Moon Lim, Jae-Wook Seo, Chun-Soo Kang, Young-Soo Park, Jong-Tai Yoon, Chul-Seung Lee, Seung-Chan Moon, Bong-Ho Kim

Proc. SPIE. 3679, Optical Microlithography XII

KEYWORDS: Lithography, Lithographic illumination, Diffusion, Reflectivity, Photomasks, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Optics manufacturing, Phase shifts

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Proceedings Article | 7 July 1997

Aberration effects in the region of 0.18 um lithography with KrF excimer stepper

Donggyu Yim, Chang-Moon Lim, Hyeong-Soo Kim, Ki-Ho Baik

Proc. SPIE. 3051, Optical Microlithography X

KEYWORDS: Lithography, Monochromatic aberrations, Optical lithography, Lithographic illumination, Deep ultraviolet, Distortion, Laser scanners, Excimer lasers, Excimers, 3D scanning

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Proceedings Article | 7 July 1997

Analysis of nonlinear overlay errors by aperture mixing related with pattern asymmetry

Chang-Moon Lim, Ki-Sung Kwon, Donggyu Yim, Dong-Hwan Son, Hyeong-Soo Kim, Ki-Ho Baik

Proc. SPIE. 3051, Optical Microlithography X

KEYWORDS: Monochromatic aberrations, Error analysis, Manufacturing, Phase shifts

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Proceedings Article | 16 May 1994

Characterization of the quarter-micron i-line lithography using a top surface imaging process

Seung-Chan Moon, Hyeong-Soo Kim, Chang-Moon Lim, Tai-Kyung Won, Soo-Han Choi

Proc. SPIE. 2195, Advances in Resist Technology and Processing XI

KEYWORDS: Lithography, Optical lithography, Lithographic illumination, Polymers, Image processing, Silicon, Photoresist materials, Critical dimension metrology, Photoresist processing, Prototyping

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Showing 5 of 54 publications

Conference Committee Involvement (7)

Extreme Ultraviolet (EUV) Lithography XI

23 February 2020 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography X

25 February 2019 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography IX

26 February 2018 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VIII

27 February 2017 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VII

22 February 2016 | San Jose, California, United States

Showing 5 of 7 published special sections

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