The lithographic performance of photoresists is a function of the vertical distribution of formulation components, such as photoacid generator (PAG) molecules, in photoresist thin films and how these components undergo chemical modification and migrate within the film during the lithography processing steps. This paper will discuss how GCIB-SIMS depth profiles were used to monitor the PAG and quencher base distributions before and after exposure and post-exposure bake processing steps for different PAG/photoresist formulations. The authors show that the use of surface active quencher in an NTD photoresist leads to better resist profiles, superior DOF and better OPC performance.
As critical dimension shrink below 0.13um at the using KrF resists, critical dimension control becomes a major concern. development is one of the critical processes affecting CD control. We have focused attention on the stage of TMAH puddle & velopment formation. How to fast develop solution percolates through the exposured area was the key to expanding the process latitude and CD uniformity. Our investigated new development method was provided this key factor.
In this paper, we compared with standard development method and our proposed new double development method. and it was found that the process latitude, CD uniformity of within-wafer and within-line pattern, the profile of the top of the pattern were improved by New development method for various pattern features.