The carriers' distribution of the semiconductor quantum dots are investigated by a rate equation method in this paper.
The inhomogeneous broadening of quantum dot's size is considered with a Gaussian distribution. Carrier distribution
between different quantum dots size are coupled via the carrier density in the wetting layer, carriers can be captures into
the quantum dot energy levels from the wetting layer as well as thermal escaping in reverse, the relaxation effect of the
carriers between the different energy level in the same quantum dot is also considered. So a detailed balance between
capture and re-emission is established in the different size quantum dot. The carrier dynamics are discussed in the
In this paper, the mathematical equation of the flatheaded Gauss laser pulse is given. Based on the Diffusion equation, by
using the Gauss laser pulses in different pulse width and shapes for the incident light sources, we get the simulations of
the time-resolved reflectance, transmittance and their pulse shapes in the boundary condition of homogeneous slab. The
simulation results show that the ultra short Gauss laser pulse is widened by the diffusive scattering, in addition, the
various medium parameters have different influence on the reflected and transmitted intensity of the laser pulse. In the
boundary condition of homogeneous slab media, the interactions between the absorption coefficient, the scattering
coefficient, the anisotropy coefficient, the pulse width and the pulse shape of the incident laser pulse all have been
investigated. This study is useful for the optical noninvasive measurement of the optical properties of tissue.
A detailed kinetic Monte Carlo simulation (KMC) is developed to investigate the temperature dependence of
semiconductor quantum dot (QD) grown by molecular beam epitaxy syetem. We find that growth temperature plays an
important role in determining the size of the QD. The simulation results are compared with the experiment and the
agreement between them indicates that this KMC simulation is useful to study the growth mode and the atomic kinetics
during the growth of the semiconductor QDs.