By continuing on the VCSEL studies, TrueLight’s VCSEL was proven to be a highly reliable product for Datacom applications as well as to have cost-effective advantages in manufacturing. In this paper, we will show the fabrication technologies for several Gigabits approach as well as for very low cost sensor applications. We will also show recent achievements in studies of extended operating temperature, single mode emission and long wavelength VCSEL emitted at about 1300 nm.
Characteristics of oxide-confined vertical-cavity surface emitting laser emitting at 1289nm will be presented in this paper. The wafer is monolithically grown using InGaAsN/GaAs QWs as active layer and GaAs/AlGaAs conventional DBRs. In the structure, the laser employs 39 pairs N-GaAs/Al0.9GaAs and 23 pairs P-GaAs/Al0.9GaAs with a selectively oxide layer located at first DBR close to active region, providing the current and optical confinement. The device processing is similar to the fabrication for current 850nm oxVCSELs. Mesa etching is used to expose the Al-rich AlGaAs layer and followed by oxidation to form the current confinement. The maximum light output power is around 950uW at room temperature under CW operation with a threshold current around 6mA for 10um aperture size devices. The device can still lase at 1000C with a maximum power of 0.14mW. Slope efficiency is 0.133(W/A) and side mode suppression ratio (SMSR) is around 20dB at 10mA operation. The aging data and speed transmission experimental data will also be presented.
The reliability of oxidized VCSEL has similar result to implanted VCSEL. This paper presents our work on reliability data of oxidized VCSEL device and also the comparison with implanted VCSEL. The MTTF of oxidized VCSEL is 2.73 x 10<sup>6</sup> hrs at 55°C, 6 mA and failure rate ~ 1 FITs for the first 2 years operation. The reliability data of oxidized VCSEL includes activation energy, MTTF (mean-time-to failure), failure rate prediction, and 85°C / 85% humidity test will be presented below. Commercialization of oxidized VCSEL is demonstrated such as VCSEL structure, manufacturing facility, and packaging. A cost effective approach is key to its success in applications such as Datacomm.
In this paper, we will present the results of the 850nm implanted and oxide-confined vertical cavity surface emitting lasers in multi-Gigabit application. In TrueLight, we have a lot of experience in manufacturing VCSEL with ion-implantation and wet-oxidation technologies for single device Gigabit data transmission application. The ion-implanted VCSEL is reliable with the Mean Time To Failure (MTTF) up to 108 hours at room temperature operation. For the gigabit Ethernet data communication, it provides a very promising solution in short haul application. In transmission experiment we demonstrated the devices could be modulated up to 2.5Gbps and 3.2Gbps data rate. For oxide-confined VCSEL devices, we use wet oxidation technology to approach the device processing and get very good result to achieve the mutli-gigabit data communication application in single device form. The VCSEL device with oxide aperture around 12um could be modulated up to 2.5Gbps and 3.2Gbps. A data of employing VCSEL in high data rate POF transmission is also presented.
TrueLight Corporation was found in 1997 and it is the pioneer of VCSEL components supplier in Taiwan. We specialize in the production and distribution of VCSEL (Vertical Cavity Surface Emitting Laser) and other high-speed PIN-detector devices and components. Our core technology is developed to meet blooming demand of fiber optic transmission. Our intention is to diverse the device application into data communication, telecommunication and industrial markets. One mission is to provide the high performance, highly reliable and low-cost VCSEL components for data communication and sensing applications. For the past three years, TrueLight Corporation has entered successfully into the Gigabit Ethernet and the Fiber Channel data communication area. In this paper, we will focus on the fabrication of VCSEL components. We will present you the evolution of implanted and oxide-confined VCSEL process, device characterization, also performance in Gigabit data communication and the most important reliability issue