Dr. Charles N. Archie Profile

Dr. Charles N. Archie

Metrology Consultant

SPIE Involvement:

Author | Instructor

Publications (43)

Proceedings Article | 13 March 2018 Presentation + Paper

CD-SEM real time bias correction using reference metrology based modeling

V. Ukraintsev, W. Banke, G. Zagorodnev, C. Archie, N. Rana, V. Pavlovsky, V. Smirnov, I. Briginas, A. Katnani, A. Vaid

Proceedings Volume 10585, 105850W (2018) https://doi.org/10.1117/12.2297065

KEYWORDS: Scanning electron microscopy, Metrology, Data modeling, Optical proximity correction, Critical dimension metrology, Photoresist materials, Scanners, Process modeling, 3D modeling, Optical lithography

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SPIE Journal Paper | 19 December 2014

Effect of measurement error budgets and hybrid metrology on qualification metrology sampling

Matthew Sendelbach, Niv Sarig, Koichi Wakamoto, Hyang Kyun (Helen) Kim, Paul Isbester, Masafumi Asano, Kazuto Matsuki, Carmen Osorio, Chas Archie

JM3, Vol. 13, Issue 04, 041414, (December 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041414

KEYWORDS: Metrology, Transmission electron microscopy, Statistical analysis, Semiconducting wafers, Error analysis, Manufacturing, Scatterometry, Semiconductors, Uncertainty analysis, Quality measurement

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Proceedings Article | 2 April 2014 Paper

Impact of shrinking measurement error budgets on qualification metrology sampling and cost

Matthew Sendelbach, Niv Sarig, Koichi Wakamoto, Hyang Kyun (Helen) Kim, Paul Isbester, Masafumi Asano, Kazuto Matsuki, Alok Vaid, Carmen Osorio, Chas Archie

Proceedings Volume 9050, 90501M (2014) https://doi.org/10.1117/12.2048933

KEYWORDS: Metrology, Transmission electron microscopy, Statistical analysis, Error analysis, Semiconducting wafers, Scatterometry, Semiconductors, Statistical modeling, Calibration, Measurement devices

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SPIE Journal Paper | 1 October 2011

Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope

Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John Allgair, Peter Ebersbach, Matthew Sendelbach, Narender Rana, Ahmad Katnani, Erin McLellan, Charles Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, Ronen Urensky

JM3, Vol. 10, Issue 04, 043016, (October 2011) https://doi.org/10.1117/12.10.1117/1.3655726

KEYWORDS: Metrology, Scatterometry, Critical dimension metrology, Semiconducting wafers, Data modeling, Atomic force microscopy, Transmission electron microscopy, Inspection, 3D metrology

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Proceedings Article | 20 April 2011 Paper

Reconciling measurements in AFM reference metrology when using different probing techniques

Narender Rana, Charles Archie, Johann Foucher

Proceedings Volume 7971, 797117 (2011) https://doi.org/10.1117/12.879516

KEYWORDS: Critical dimension metrology, Calibration, Metrology, Deconvolution, Statistical analysis, Cadmium, Standards development, Semiconducting wafers, Data analysis, 3D metrology

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CD-AFM can report CD measurements to several nanometer differences when different probing techniques including probe types, scan methods, or data analyses are employed on the same sample despite using standard calibration techniques. This potentially weakens the assertion that this instrument is inherently accurate. It is particularly important to resolve these discrepancies given the measurement challenges where multiple probing techniques need to be employed to get complete CD information. Probe type refers to tip construction methods that can significantly affect geometrical aspects of probe such as effective length, width, and edge height as well as material composition and coating. Scan code refers to CD or DT mode of tool operation. Analysis includes probe geometry deconvolution and measurement algorithms. These challenges in measurement accuracy are especially significant for the foot or bottom CD metrology of 3D structures. This paper explores the impact of these different probing techniques on the measurement accuracy. In one series of experiments, measurements for different probing techniques are compared when the test and the referencing structures are composed of similar material and possess smooth vertical profiles. The investigation is then extended to explore the accuracy of bottom CD measurement of non vertical profiles encountered in actual process development. A hybrid method using CD and DT modes has been tested to measure the bottom CD of challenging pitch structures. The limited space for the probe is particularly problematic for CD mode but the accuracy of DT mode for CD measurement is a concern. Other challenges will also be discussed along with possible solutions. CD-AFM has increased uncertainty when it comes to measuring within 15 nm of the bottom of a structure. In this regime details of the shape of the probe and the method by which this shape is extracted from the raw data become important. Measured CDs can vary by a few nanometers depending upon the algorithm employed for data analysis. These algorithms apply approximate methods for probe shape deconvolution from the raw data. Given all these sources of variation in CD determination it important to understand their impact on the accuracy of measurement in order to properly estimate uncertainty and drive improvement. Overall this paper provides a practical guideline in pursuit of accurate CD metrology and scope for improvements for upcoming technology nodes.

SPIE Journal Paper | 1 April 2011

Critical dimension scanning electron microscope local overlay measurement and its application for double patterning of complex shapes

Shoji Hotta, Takumichi Sutani, Scott Halle, Daniel Moore, Chas Archie, Akiyuki Sugiyama, Masahiko Ikeno, Atsuko Yamaguchi, Kazuyoshi Torii

JM3, Vol. 10, Issue 02, 023014, (April 2011) https://doi.org/10.1117/12.10.1117/1.3599867

KEYWORDS: Overlay metrology, Scanning electron microscopy, Double patterning technology, Electron microscopes, Data modeling, Semiconducting wafers, Optical lithography, Lithography, Error analysis, Wafer-level optics

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Proceedings Article | 29 March 2011 Paper

A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM

Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John Allgair, Peter Ebersbach, Matthew Sendelbach, Narender Rana, Ahmad Katnani, Erin Mclellan, Chas Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, Ronen Urensky

Proceedings Volume 7971, 797103 (2011) https://doi.org/10.1117/12.881632

KEYWORDS: Metrology, Critical dimension metrology, Scatterometry, Semiconducting wafers, Metals, Transmission electron microscopy, Data modeling, Atomic force microscopy, Inspection

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Proceedings Article | 2 April 2010 Paper

Concerning the influence of pattern symmetry on CD-SEM local overlay measurements for double patterning of complex shapes

Shoji Hotta, Takumichi Sutani, Akiyuki Sugiyama, Masahiko Ikeno, Atsuko Yamaguchi, Kazuyoshi Torii, Scott Halle, Daniel Moore, Chas Archie

Proceedings Volume 7638, 76381T (2010) https://doi.org/10.1117/12.846674

KEYWORDS: Overlay metrology, Double patterning technology, Scanning electron microscopy, Semiconducting wafers, Optical lithography, Control systems, Metrology, Lithography, Algorithm development, Detection and tracking algorithms

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Proceedings Article | 2 April 2010 Paper

Spatial signature in local overlay measurements: what CD-SEM can tell us and optical measurements can not

Scott Halle, Daniel Moore, Chas Archie, Shoji Hotta, Takumichi Sutani, Akiyuki Sugiyama, Masahiko Ikeno, Atsuko Yamaguchi, Kazuyoshi Torii

Proceedings Volume 7638, 76381V (2010) https://doi.org/10.1117/12.846665

KEYWORDS: Overlay metrology, Double patterning technology, Scanning electron microscopy, Data modeling, Wafer-level optics, Optical testing, Lithography, Semiconducting wafers, Metrology, Visualization

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Proceedings Article | 2 April 2010 Paper

Hybrid reference metrology exploiting patterning simulation

Narender Rana, Chas Archie

Proceedings Volume 7638, 76380W (2010) https://doi.org/10.1117/12.848311

KEYWORDS: Calibration, Metrology, Optical lithography, Critical dimension metrology, Atomic force microscopy, 3D modeling, Space reconnaissance, Semiconducting wafers, 3D metrology, Semiconductors

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Workhorse metrology such as CD-SEM is used during process development, process control, and optical proximity correction model generation and verification. Such metrology needs to be calibrated to handle various types of profiles encountered during IC fabrication. Reference metrology is used for calibration of workhorse metrology. There is an astounding need for sub-half and sub-quarter nanometer measurement uncertainty in the near future technology nodes as envisaged in the International Technology Roadmap for Semiconductors. In this regime of desired measurement uncertainty all metrology techniques are deemed limited and hybrid metrology appears promising to offer a solution. Hybrid metrology is the use of multiple metrology techniques, each with particular strength, to reduce the overall measurement uncertainty. CD-AFM makes use of a flared probe in order to scan the sidewalls and bottom of the pattern on a wafer to provide 3D profile and CD measurements at desired location on the profile. As the CD shrinks with technology nodes especially the space, the size of the AFM probe also needs to shrink while maintaining the flared geometry specifications. Unfortunately the fabrication of such probes is a challenge and new techniques are required to extend reference metrology to the smallest space and hole of interest. This paper proposes a reference system combining CD-AFM and patterning simulation model. This hybrid metrology system enables CD metrology in a space not measurable directly by conventional CD-AFM probe. The key idea is to use the successfully measured profile and CD information from the CD-AFM to calibrate or train the patterning simulation optical and resist model. Ability of this model to predict profile and CD measurement is verified on a physically measured dataset including cross sections and additional CD-AFM measurements. It is hypothesized that this model will be able to predict profile and CD measurements in otherwise immeasurable geometries. Being based on optics and materials fundamentals, this approach is presumed to be more accurate compared to mere extrapolation approach in use today. We report on the measurement uncertainty improvement with this approach. Situations with highest prediction confidence involve CD-AFM scanning resulting in partial information. For example, using carbon nanotube probes or CDP where there is little flaring of the tip, the CD-AFM cannot detect significant undercutting of the structure. Achieving agreement with the calibrated patterning model for measurement metrics such as height, top and middle CD permits the prediction of the bottom CD to be used as an authentic reference measurement.

Proceedings Article | 2 April 2010 Paper

CDSEM focus/dose monitor for product applications

Chas Archie, Eric Solecky, Pawan Rawat, Timothy Brunner, Kenji Yoshimoto, Roger Cornell, Ofer Adan

Proceedings Volume 7638, 763804 (2010) https://doi.org/10.1117/12.846694

KEYWORDS: Semiconducting wafers, Line width roughness, Lithography, Scanners, Scatterometry, Scanning electron microscopy, Optical lithography, Optical testing, Finite element methods, Edge roughness

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Proceedings Article | 24 March 2009 Paper

Monitoring measurement tools: new methods for driving continuous improvements in fleet measurement uncertainty

Eric Solecky, Chas Archie, Matthew Sendelbach, Ron Fiege, Mary Zaitz, Dmitriy Shneyder, Carlos Strocchia-rivera, Andres Munoz, Srinivasan Rangarajan, William Muth, Andrew Brendler, Bill Banke, Bernd Schulz, Carsten Hartig, Jon-Tobias Hoeft, Alok Vaid, Mark Kelling, Benjamin Bunday, John Allgair

Proceedings Volume 7272, 72721H (2009) https://doi.org/10.1117/12.814089

KEYWORDS: Semiconducting wafers, Metrology, Scatterometry, Process control, Calibration, Manufacturing, Overlay metrology, Time metrology, Atomic force microscopy

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Ever shrinking measurement uncertainty requirements are difficult to achieve for a typical metrology toolset, especially over the entire expected life of the fleet. Many times, acceptable performance can be demonstrated during brief evaluation periods on a tool or two in the fleet. Over time and across the rest of the fleet, the most demanding processes often have measurement uncertainty concerns that prevent optimal process control, thereby limiting premium part yield, especially on the most aggressive technology nodes. Current metrology statistical process control (SPC) monitoring techniques focus on maintaining the performance of the fleet where toolset control chart limits are derived from a stable time period. These tools are prevented from measuring product when a statistical deviation is detected. Lastly, these charts are primarily concerned with daily fluctuations and do not consider the overall measurement uncertainty. It is possible that the control charts implemented for a given toolset suggest a healthy fleet while many of these demanding processes continue to suffer measurement uncertainty issues. This is especially true when extendibility is expected in a given generation of toolset. With this said, there is a need to continually improve the measurement uncertainty of the fleet until it can no longer meet the needed requirements at which point new technology needs to be entertained. This paper explores new methods in analyzing existing SPC monitor data to assess the measurement performance of the fleet and look for opportunities to drive improvements. Long term monitor data from a fleet of overlay and scatterometry tools will be analyzed. The paper also discusses using other methods besides SPC monitors to ensure the fleet stays matched; a set of SPC monitors provides a good baseline of fleet stability but it cannot represent all measurement scenarios happening in product recipes. The analyses presented deal with measurement uncertainty on non-measurement altering metrology toolsets such as scatterometry, overlay, atomic force microscopy (AFM) or thin film tools. The challenges associated with monitoring toolsets that damage the sample such as the CD-SEMs will also be discussed. This paper also explores improving the monitoring strategy through better sampling and monitor selection. The industry also needs to converge regarding the metrics used to describe the matching component of measurement uncertainty so that a unified approach is reached regarding how to best drive the much needed improvements. In conclusion, there will be a discussion on automating these new methods3,4 so they can complement the existing methods to provide a better method and system for controlling and driving matching improvements in the fleet.

Proceedings Article | 23 March 2009 Open Access

The measurement uncertainty challenge of advanced patterning development

Narender Rana, Chas Archie, Wei Lu, Bill Banke

Proceedings Volume 7272, 727203 (2009) https://doi.org/10.1117/12.814170

KEYWORDS: Metrology, Critical dimension metrology, Optical proximity correction, Scanners, Calibration, Semiconducting wafers, Optical lithography, Scanning electron microscopy, Data modeling, Lithography

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The trend of reducing the feature size in ICs requires tightening control of critical dimension (CD) variability for optimal device performance. This drives a need to be able to accurately characterize the variability in order to have reliable metrics to drive improvement in development. Variation in CDs can come from various sectors such as mask, OPC, litho & Etch. Metrology is involved in all sectors and it is important to understand the accuracy limitations in metrology contributing to CD variability. Inaccuracy of the CD-SEM algorithm arising from profile variations is one example. Profile variation can result from process and design variation. Total Measurement Uncertainty (TMU) is a metric dependent on the precision of tool under test (CD-SEM here) and relative accuracy, and can track the accuracy of CD measurements in the presence of varying profiles. This study explores metrology limitations to capture the design and process contributions to the CD variation at the post litho step. In this paper lithography scanner focus-exposure matrix wafer was used to capture the process variation. CD and profile data is taken from varying focus fields. The sample plan described in this paper also covers the design variation by including nested features and isolated features of various sizes. Appropriate averaging methodology has been adopted in an attempt to decouple the process and design related CD variation to TMU. While the tool precision can be suppressed by sufficient averaging, the relative accuracy cannot. This relative accuracy is affected by the complex CD-SEM probe to sample interactions and sensitivity of CD-SEM algorithms to different feature profiles. One consequence of this is the average offsets between physical CDs (CDAFM) and SEM CDs change significantly with the defocus. TMU worsens as the focus range is increased from nominal focus. This paper explores why this is so and also discusses the challenges for the CD-AFM to accurately measure complex and varying profiles. There is a discussion of the implications of this study for the production measurement uncertainty, OPC calibration measurement at process of record conditions, and for process window OPC. Results for optimizing the CD-SEM algorithm to achieve superior accuracy across both design and process induced variation will also be presented.

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Proceedings Article | 16 April 2008 Paper

Impact of sampling on uncertainty: semiconductor dimensional metrology applications

Benjamin Bunday, Bart Rijpers, Bill Banke, Chas Archie, Ingrid Peterson, Vladimir Ukraintsev, Thomas Hingst, Masafumi Asano

Proceedings Volume 6922, 69220X (2008) https://doi.org/10.1117/12.772993

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Metrology, Process control, Statistical analysis, Calibration, Scatterometry, Multiphoton fluorescence microscopy, Scanning electron microscopy, Etching

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Proceedings Article | 22 March 2008 Paper

Challenges of implementing contour modeling in 32nm technology

Daniel Fischer, Geng Han, James Oberschmidt, Yong Wah Cheng, Jae Yeol Maeng, Charles Archie, Wei Lu, Cyrus Tabery

Proceedings Volume 6922, 69220A (2008) https://doi.org/10.1117/12.775444

KEYWORDS: Calibration, Scanning electron microscopy, Metrology, Optical proximity correction, Critical dimension metrology, Cadmium, Data modeling, Line edge roughness, Tolerancing, Systems modeling

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Proceedings Article | 22 March 2008 Paper

Characterization of 32nm node BEOL grating structures using scatterometry

Shahin Zangooie, Matthew Sendelbach, Matthew Angyal, Charles Archie, Alok Vaid, Itty Matthew, Pedro Herrera

Proceedings Volume 6922, 69220S (2008) https://doi.org/10.1117/12.773088

KEYWORDS: Copper, Scatterometry, Back end of line, Metals, Critical dimension metrology, Semiconducting wafers, Chemical mechanical planarization, Metrology, Inspection, Dielectrics

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Proceedings Article | 5 April 2007 Paper

Realizing "value-added" metrology

Benjamin Bunday, Pete Lipscomb, John Allgair, Dilip Patel, Mark Caldwell, Eric Solecky, Chas Archie, Jennifer Morningstar, Bryan Rice, Bhanwar Singh, Jason Cain, Iraj Emami, Bill Banke, Alfredo Herrera, Vladamir Ukraintsev, Jerry Schlessinger, Jeff Ritchison

Proceedings Volume 6518, 65181K (2007) https://doi.org/10.1117/12.714216

KEYWORDS: Metrology, Overlay metrology, Inspection, Semiconducting wafers, Process control, Yield improvement, Critical dimension metrology, Optical proximity correction, Etching, Lithography

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The conventional premise that metrology is a "non-value-added necessary evil" is a misleading and dangerous assertion, which must be viewed as obsolete thinking. Many metrology applications are key enablers to traditionally labeled "value-added" processing steps in lithography and etch, such that they can be considered integral parts of the processes. Various key trends in modern, state-of-the-art processing such as optical proximity correction (OPC), design for manufacturability (DFM), and advanced process control (APC) are based, at their hearts, on the assumption of fine-tuned metrology, in terms of uncertainty and accuracy. These trends are vehicles where metrology thus has large opportunities to create value through the engineering of tight and targetable process distributions. Such distributions make possible predictability in speed-sorts and in other parameters, which results in high-end product. Additionally, significant reliance has also been placed on defect metrology to predict, improve, and reduce yield variability. The necessary quality metrology is strongly influenced by not only the choice of equipment, but also the quality application of these tools in a production environment. The ultimate value added by metrology is a result of quality tools run by a quality metrology team using quality practices. This paper will explore the relationships among present and future trends and challenges in metrology, including equipment, key applications, and metrology deployment in the manufacturing flow. Of key importance are metrology personnel, with their expertise, practices, and metrics in achieving and maintaining the required level of metrology performance, including where precision, matching, and accuracy fit into these considerations. The value of metrology will be demonstrated to have shifted to "key enabler of large revenues," debunking the out-of-date premise that metrology is "non-value-added." Examples used will be from critical dimension (CD) metrology, overlay, films, and defect metrology.

Proceedings Article | 5 April 2007 Paper

Characterization of capacitive 3D deep trench mask open structures using scatterometry

Shahin Zangooie, Pedro Herrera, Abebe Mesfin, Chas Archie, Matthew Sendelbach

Proceedings Volume 6518, 651827 (2007) https://doi.org/10.1117/12.712763

KEYWORDS: Scatterometry, Silicon, Metrology, Semiconducting wafers, Critical dimension metrology, Photomasks, 3D metrology, Scatter measurement, Scanning electron microscopy, Etching

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Proceedings Article | 5 April 2007 Paper

The coming of age of tilt CD-SEM

B. Bunday, J. Allgair, E. Solecky, C. Archie, N. Orji, J. Beach, O. Adan, R. Peltinov, M. Bar-zvi, J. Swyers

Proceedings Volume 6518, 65181S (2007) https://doi.org/10.1117/12.714214

KEYWORDS: Photoresist materials, Semiconducting wafers, Metrology, Critical dimension metrology, Scanning electron microscopy, Scanners, Lithography, Process control, Calibration

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The need for 3D metrology is becoming more urgent to address critical gaps in metrology for both lithographic and etch processes. Current generation lithographic processing (ArF source, where λ=193 nm) sometimes results in photoresist lines with re-entrant profiles or T-topping, as do many etch processes. A re-entrant profile misleads top-down metrology into reading the critical dimension (CD) as too large. Recent advances in gate process technology also raise challenges to traditional top-down metrology. One such example is the FinFET, which is truly a 3D device with 3D metrology needs. The ability to measure the bottom width of a profile is crucial for process control. Recently, tilt-beam critical dimension-scanning electron microscopy (CD-SEM) applications have been developed to measure the bottom CD of such features, using the tilted-view to "see" the bottom, avoiding the feature's larger top. This is an important achievement, as the bottom of a profile is the main feature of interest in many processes. Estimation of sidewall angle (SWA) is also important. For several years, tilt-beam CD-SEM has been an available technique for this measurement, with limited adoption by the litho-metrology community. However, in this paper we will explore another method to use the tilt feature to measure average sidewall angle, based on edgewidth measurement and the assumption of basic trapezoidal profile and known height and combined with the ability to sample multiple-features. While it will not provide exact profile shape, this technique can be quite useful in providing average profile information and will definitely exhibit good throughput. Samples used will be photoresist and etched FinFET structures to measure sidewall angles. Correlations of the results to a traceable CD-atomic force microscopy (AFM) reference measurement system are provided. Conclusions will show preliminary findings of the readiness of tilt-beam CD-SEM for measuring profile and, by extension, the status of measuring 3D structures such as FinFETs, and using CD-SEM as a direct control of lithographic tooling for T-topped photoresist profiles.

Proceedings Article | 24 March 2006 Paper

Metrology tool fleet management: applying FMP tool matching and monitoring concepts to an overlay fleet

Jennifer Morningstar, Eric Solecky, Chas Archie, Bill Banke

Proceedings Volume 6152, 615212 (2006) https://doi.org/10.1117/12.655578

KEYWORDS: Overlay metrology, Metrology, Process control, Semiconducting wafers, Tolerancing, Diagnostics, Back end of line, Visualization, Inspection, Optical lithography

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Proceedings Article | 10 March 2006 Paper

Embedded charge investigation: industry concerns and metrology solutions

Eric Solecky, Georgios Vakas, Chas Archie, Ofer Adan, Asaf Dajczman, Roger Cornell, Paul Llanos

Proceedings Volume 6152, 615203 (2006) https://doi.org/10.1117/12.660214

KEYWORDS: Semiconducting wafers, Back end of line, Lithography, Metrology, Etching, Scanning electron microscopy, Visualization, Process control, Metals, Quality measurement

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Proceedings Article | 10 May 2005 Paper

New comprehensive metrics and methodology for metrology tool fleet matching

Eric Solecky, Chas Archie, Bill Banke

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.602330

KEYWORDS: Diagnostics, Metrology, Manufacturing, Statistical analysis, Calibration, Data acquisition, Process control, Picosecond phenomena, Semiconducting wafers, Data modeling

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Proceedings Article | 10 May 2005 Paper

Comparison of scatterometry, atomic force microscope, dual beam system, and XSEM to measure etched via depths

Matthew Sendelbach, Dmitriy Shneyder, Wei Lu, Kevin Boyd

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600737

KEYWORDS: Atomic force microscopy, Semiconducting wafers, Metrology, Scatterometry, Etching, Critical dimension metrology, Error analysis, Composites, Atomic force microscope, Optical testing

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Proceedings Article | 24 May 2004 Paper

Reducing measurement uncertainty drives the use of multiple technologies for supporting metrology

Bill Banke, Charles Archie, Matthew Sendelbach, Jim Robert, James Slinkman, Phil Kaszuba, Rick Kontra, Mick DeVries, Eric Solecky

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.546880

KEYWORDS: Metrology, Transmission electron microscopy, Calibration, Error analysis, Atomic force microscopy, Scatterometry, Manufacturing, Capacitance, Statistical analysis, Scanning electron microscopy

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Perhaps never before in semiconductor microlithography has there been such an interest in the accuracy of measurement. This interest places new demands on our in-line metrology systems as well as the supporting metrology for verification. This also puts a burden on the users and suppliers of new measurement tools, which both challenge and complement existing manufacturing metrology. The metrology community needs to respond to these challenges by using new methods to assess the fab metrologies. An important part of this assessment process is the ability to obtain accepted reference measurements as a way of determining the accuracy and Total Measurement Uncertainty (TMU) of an in-line critical dimension (CD). In this paper, CD can mean any critical dimension including, for example, such measures as feature height or sidewall angle. This paper describes the trade-offs of in-line metrology systems as well as the limitations of Reference Measurement Systems (RMS). Many factors influence each application such as feature shape, material properties, proximity, sampling, and critical dimension. These factors, along with the metrology probe size, interaction volume, and probe type such as e-beam, optical beam, and mechanical probe, are considered. As the size of features shrinks below 100nm some of the stalwarts of reference metrology come into question, such as the electrically determined transistor gate length. The concept of the RMS is expanded to show how multiple metrologies are needed to achieve the right balance of accuracy and sampling. This is also demonstrated for manufacturing metrology. Various comparisons of CDSEM, scatterometry, AFM, cross section SEM, electrically determined CDs, and TEM are shown. An example is given which demonstrates the importance in obtaining TMU by balancing accuracy and precision for selecting manufacturing measurement strategy and optimizing manufacturing metrology. It is also demonstrated how the necessary supporting metrology will bring together formerly unlinked technology fields requiring new measurement science. The emphasis on accuracy will increase the importance and role of NIST and similar metrology organizations in supporting the semiconductor industry in this effort.

Proceedings Article | 24 May 2004 Paper

Total measurement uncertainty and total process precision evaluation of a structural metrology approach to monitoring post-CMP processes

Wei Lu, Charles Archie, Stacey Stone, Hyoung Kang, Prasanna Chitturi

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.538051

KEYWORDS: Metrology, Chemical mechanical planarization, Semiconducting wafers, Dielectrics, Image analysis, Scanning electron microscopy, Metals, Image processing, Error analysis, Statistical analysis

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Proceedings Article | 24 May 2004 Paper

Feedforward of mask open measurements on an integrated scatterometer to improve gate linewidth control

Matthew Sendelbach, Wesley Natzle, Charles Archie, Bill Banke, Dan Prager, Dan Engelhard, Jason Ferns, Asao Yamashita, Merritt Funk, Fumihiko Higuchi, Masayuki Tomoyasu

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.537969

KEYWORDS: Semiconducting wafers, Etching, Critical dimension metrology, Calibration, Metrology, Control systems, Photomasks, Silver, Error analysis, Silicon

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Proceedings Article | 24 May 2004 Paper

Correlating scatterometry to CD-SEM and electrical gate measurements at the 90-nm node using TMU analysis

Matthew Sendelbach, Charles Archie, Bill Banke, Jason Mayer, Hideaki Nii, Pedro Herrera, Matt Hankinson

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.538009

KEYWORDS: Scatterometry, Semiconducting wafers, Scatter measurement, Scanning electron microscopy, Critical dimension metrology, Metrology, Manufacturing, Electrodes, Data modeling, Capacitance

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Proceedings Article | 2 June 2003 Paper

New apparent beam width artifact and measurement methodology for CD-SEM resolution monitoring

Jason Mayer, Kylee Huizenga, Eric Solecky, Charles Archie, G. Banke, Robert Cogley, Claudine Nathan, James Robert

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485035

KEYWORDS: Semiconducting wafers, Line edge roughness, Atomic force microscopy, Scanning electron microscopy, Voltage controlled current source, Optical resolution, Manufacturing, Reticles, Edge roughness, Microelectronics

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Proceedings Article | 2 June 2003 Paper

Scatterometry measurement precision and accuracy below 70 nm

Matthew Sendelbach, Charles Archie

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.488117

KEYWORDS: Semiconducting wafers, Scatterometry, Transmission electron microscopy, Metrology, Scatter measurement, Calibration, Etching, Composites, Precision measurement, Critical dimension metrology

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Scatterometry is a contender for various measurement applications where structure widths and heights can be significantly smaller than 70 nm within one or two ITRS generations. For example, feedforward process control in the post-lithography transistor gate formation is being actively pursued by a number of RIE tool manufacturers. Several commercial forms of scatterometry are available or under development which promise to provide satisfactory performance in this regime. Scatterometry, as commercially practiced today, involves analyzing the zeroth order reflected light from a grating of lines. Normal incidence spectroscopic reflectometry, 2-theta fixed-wavelength ellipsometry, and spectroscopic ellipsometry are among the optical techniques, while library based spectra matching and realtime regression are among the analysis techniques. All these commercial forms will find accurate and precise measurement a challenge when the material constituting the critical structure approaches a very small volume. Equally challenging is executing an evaluation methodology that first determines the true properties (critical dimensions and materials) of semiconductor wafer artifacts and then compares measurement performance of several scatterometers. How well do scatterometers track process induced changes in bottom CD and sidewall profile? This paper introduces a general 3D metrology assessment methodology and reports upon work involving sub-70 nm structures and several scatterometers. The methodology combines results from multiple metrologies (CD-SEM, CD-AFM, TEM, and XSEM) to form a Reference Measurement System (RMS). The methodology determines how well the scatterometry measurement tracks critical structure changes even in the presence of other noncritical changes that take place at the same time; these are key components of accuracy. Because the assessment rewards scatterometers that measure with good precision (reproducibility) and good accuracy, the most precise scatterometer is not necessarily the best.

Proceedings Article | 2 June 2003 Paper

Characterizing and understanding stray tilt: the next major contributor to CD-SEM tool matching

Eric Solecky, Charles Archie, Jason Mayer, Roger Cornell, Ofer Adan

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485033

KEYWORDS: Scanning electron microscopy, Semiconducting wafers, Critical dimension metrology, Metrology, Optical testing, Electron beams, Manufacturing, Tolerancing, Calibration, Process control

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Proceedings Article | 16 July 2002 Paper

Improving sub-150-nm lithography and etch CD-SEM correlations to AFM and electrical test

Eric Solecky, Jason Mayer, Charles Archie

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473486

KEYWORDS: Critical dimension metrology, Smoothing, Scanning electron microscopy, Etching, Signal to noise ratio, Semiconducting wafers, Standards development, Transistors, Finite element methods, Process control

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Proceedings Article | 24 August 2001 Paper

Investigation on the mechanism of the 193-nm resist linewidth reduction during the SEM measurement

ChungHsi Wu, Wu-Song Huang, K. Rex Chen, Charles Archie, Mark Lagus

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436848

KEYWORDS: Scanning electron microscopy, Semiconducting wafers, Floods, Atomic force microscopy, Polymers, Environmental sensing, Annealing, Critical dimension metrology, Wafer bonding, Photoresist processing

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Proceedings Article | 22 August 2001 Paper

Practical monitor and control of SEM astigmatism in manufacturing

Sandra Dupuis, Timothy Hayes, Charles Archie, Eric Solecky

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436760

KEYWORDS: Monochromatic aberrations, Scanning electron microscopy, Manufacturing, Semiconducting wafers, Electron beams, Detection and tracking algorithms, Calibration, Control systems, Process control, Critical dimension metrology

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Proceedings Article | 22 August 2001 Paper

Monitoring printing fidelity with image correlation measurements on the CD SEM

Charles Archie, Eric Solecky, Timothy Hayes, G. Banke

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436764

KEYWORDS: Printing, Pattern recognition, Image processing, Chlorine, Image enhancement, Critical dimension metrology, Scanning electron microscopy, Lithography, Finite element methods, Semiconducting wafers

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Proceedings Article | 22 August 2001 Paper

Three-dimensional top-down metrology: a viable alternative to AFM or cross-section?

Eric Solecky, Charles Archie, Timothy Hayes, G. Banke, Roger Cornell

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436762

KEYWORDS: Atomic force microscopy, 3D metrology, Metrology, Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Process control, Electron beams, Reconstruction algorithms, Optical simulations

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Proceedings Article | 18 August 2000 Paper

Benchmarking of advanced CD-SEMs against a new unified specification for sub-0.18-um lithography

Alain Deleporte, John Allgair, Charles Archie, G. Banke, Michael Postek, Jerry Schlesinger, Andras Vladar, Arnold Yanof

Proceedings Volume 4181, (2000) https://doi.org/10.1117/12.395750

KEYWORDS: Lithography, Standards development, Scanning electron microscopy, Electron microscopes

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Proceedings Article | 2 June 2000 Paper

Benchmarking of advanced CD-SEMs against the new unified specification for sub-0.18-um lithography

Alain Deleporte, John Allgair, Charles Archie, G. Banke, Michael Postek, Jerry Schlesinger, Andras Vladar, Arnold Yanof

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386524

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Metrology, Atomic force microscopy, Wafer testing, Contamination, Manufacturing, Critical dimension metrology, Lithography, Standards development

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The Advanced Metrology Advisory Group (AMAG) comprised of representatives from International SEMATECH consortium member companies and the National Institute of Standards and Technology have joined to develop a new unified specification for an advanced scanning electron microscope critical dimension measurement instrument (CD-SEM). (Allgair, et al., 1998) This paper describes the results of an effort to benchmark six CD-SEM instruments according to this specification. The consensus among the AMAG metrologists was that many critical areas of performance of CD-SEMs required improvement. Following this assessment this specification for benchmarking was developed. The advanced CD-SEM specification addresses several critical areas for improvement, each with its own a separate section. The critical areas covered are: precision, accuracy, charging and contamination, performance matching, pattern recognition and stage navigation accuracy, throughput, and instrumentation outputs. Each section of the specification contains a concise definition of the respective performance parameter, and wherever appropriate refers to ISO definitions. The test methodology is described, complete with the relevant statistical analysis. Many parameters (including precision, matching, and magnification accuracy) are numerically specified to be consistent with the International Technology Roadmap for Semiconductors (ITRS, 1999). Other parameters, such as charging and linewidth accuracy, are targeted with guidelines for improvement. The test wafers developed for determining the level of compliance with the specification are also discussed. The AMAG circulated this report among the metrology instrument suppliers and conferred with them. Certain components of the specification have already been adopted by some of the manufacturers in their newer metrology instruments. International SEMATECH fabricated the AMAG test wafers described herein. Measurements on six state-of-the-art metrology instruments using the AMAG test wafers have been carried out and the results were processed according to this specification. A review of the results is presented in this paper.

Proceedings Article | 14 June 1999 Paper

Modeling and experimental aspects of apparent beam width as an edge resolution measure

Charles Archie, Jeremiah Lowney, Michael Postek

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350854

KEYWORDS: Scanning electron microscopy, Critical dimension metrology, Semiconducting wafers, Monte Carlo methods, Monochromatic aberrations, Metrology, Photoresist materials, Silicon, Electron beams, Semiconductor materials

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Proceedings Article | 14 June 1999 Paper

Image processing for SEMs: is this the way to go for CD metrology?

Eric Solecky, Charles Archie

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350867

KEYWORDS: Image processing, Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Contamination, Image analysis, Error analysis, Edge roughness, Image filtering, Optical testing

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Proceedings Article | 14 June 1999 Paper

Characteristics of accuracy for CD metrology

G. Banke, Charles Archie

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350818

KEYWORDS: Calibration, Semiconducting wafers, Error analysis, Metrology, Scanning electron microscopy, Critical dimension metrology, Manufacturing, Statistical analysis, Atomic force microscopy, Precision measurement

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Proceedings Article | 8 June 1998 Paper

Toward a unified advanced CD-SEM specification for sub-0.18-um technology

John Allgair, Charles Archie, G. Banke, E. Hal Bogardus, Joseph Griffith, Herschel Marchman, Michael Postek, Lumdas Saraf, Jerry Schlesinger, Bhanwar Singh, Neal Sullivan, Lee Trimble, Andras Vladar, Arnold Yanof

Proceedings Volume 3332, (1998) https://doi.org/10.1117/12.308724

KEYWORDS: Semiconducting wafers, Metrology, Pattern recognition, Scanning electron microscopy, Contamination, Lithography, Calibration, Standards development, Wafer testing, Electron microscopes

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Proceedings Article | 7 July 1997 Paper

Contact holes: a challenge for signal collection efficiency and measurement algorithms

Eric Solecky, Charles Archie

Proceedings Volume 3050, (1997) https://doi.org/10.1117/12.275962

KEYWORDS: Electrons, Scanning electron microscopy, Interference (communication), Metrology, Critical dimension metrology, Semiconducting wafers, Finite element methods, Inspection, Signal to noise ratio, Image analysis

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Proceedings Article | 24 June 1993 Paper

Helios compact synchrotron x-ray source: one year of operation at ALF

David Andrews, Charles Archie

Proceedings Volume 1924, (1993) https://doi.org/10.1117/12.146517

KEYWORDS: Synchrotrons, X-ray sources, X-rays, Power supplies, Semiconductors, Lithography, Cryogenics, Reliability, Control systems, Manufacturing

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Showing 5 of 43 publications

Proceedings Volume Editor (4)

SPIE Conference Volume | 15 March 2007

Metrology, Inspection, and Process Control for Microlithography XXI

SPIE Conference Volume | 10 March 2006

Metrology, Inspection, and Process Control for Microlithography XX

SPIE Conference Volume | 10 May 2005

Metrology, Inspection, and Process Control for Microlithography XIX

SPIE Conference Volume | 24 May 2004

Metrology, Inspection, and Process Control for Microlithography XVIII

Conference Committee Involvement (9)

Metrology, Inspection, and Process Control for Microlithography XXV

28 February 2011 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXIV

22 February 2010 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXIII

23 February 2009 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXII

25 February 2008 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXI

26 February 2007 | San Jose, California, United States

Showing 5 of 9 Conference Committees

Course Instructor

SC705: Instruments and Methodologies for Accurate Metrology and Fleet Matching

This course teaches the methodologies of total measurement uncertainty (TMU) analysis and fleet measurement precision (FMP) analysis. The course concentrates on the application of a general form of regression analysis (Mandel) to the applications of measurement tool matching, and measurement instrument assessment and optimization. Case studies will be selected from a collection of examples from measurement technologies such as CD-SEM, scatterometer, overlay, and CD-AFM. These examples will provide the seminar participants with the knowledge and tools necessary for conducting single tool and multiple tool assessments and optimizations.

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