Micro-size light emitting diode (μLED) arrays based on III-nitride semiconductors have emerged as a
promising technology for a wide range of applications. If InGaN μLED arrays can be integrated on to Si
complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play
crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields
such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a highresolution
solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient
active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers
that are flip-chip bonded together via indium metal bumps.
An alternative method for measuring the contrast transfer function (CTF) of a pixilated display is proposed that reduces the amount of time required to perform a high sample rate-small aperture luminance scan as outlined in the Video Electronics Standards Association (VESA) standard for measuring the contrast of an n X n grille. The alternative method proposed by the Night Vision Electronic Sensors Directorate (NVESD) Displays group utilizes round sampling apertures and large step sizes to achieve comparable results to the VESA standard method. Theoretical predictions and experimental measurements demonstrated the equivalency between the proposed large aperture method and the VESA standard method with less than 8% maximum variation and an average of 2.4% variation between the two methods over two different input contrasts and 4 different grille frequencies. Experimental results also show a reduction in time to perform the profile scan by as much as 15:1 for the NVESD proposed test method over the VESA standard method.
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