Proc. SPIE. 10978, Advanced Photon Counting Techniques XIII
KEYWORDS: Near infrared, CMOS sensors, Imaging systems, Cameras, LIDAR, Sensors, Silicon, Single photon, Image sensors, Single photon detectors, 3D image processing, Direct detection LIDAR, Single-photon counters, Time of flight range image sensors
Initial results of electrical and optical characterization of Voxtel’s first generation 256 x 256 dual-mode silicon singlephoton avalanche diode (SPAD) image sensor are presented. The SPAD image sensor is a dual-mode device capable of sequential passive single-photon-counting (2D) and active single-photon lidar (3D) range imaging at greater than 250 frames per second, full-frame. The sensor was developed in 180-nm complementary metal-oxide semiconductor imagesensor technology with a pixel pitch of 30 μm and fill factor of 9%; and it achieves room temperature per-pixel dark count rate of less than 55 Hz (0.63 Hz/μm2), peak photon detection probability of 29% (at 480 nm) and timing jitter of 268 ps full width at half maximum at the optimal operating point. Preliminary imaging results in 2D and 3D mode are presented.