SiC nanocrystals of size 4×30×40nm have been fabricated on Si (100)3° by a low cost spin-on technique in which Htermination
produces smaller crystallites but larger crystallite density at the substrate surface steps. Low temperature
photoluminescence and atomic force microscopy (AFM) confirms the formation of quantum dashes. It has been observed
that the spin speed and H-termination plays a crucial role in the formation of quantized structures on Si.