In this paper we will discuss 14 Gb/s 850 nm oxide VCSEL performance and reliability. The device is targeted for the
16G Fibre Channel standard. The 14 Gb/s 850 nm oxide VCSEL meets the standard's specifications over the extended
temperature range to support transceiver module operation from 0C to 85C.
In this paper we report a 850nm oxide VCSEL operating at 20 Gbit/s (PRBS31) with a 5 dB Extinction Ratio,
based on a volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We present
detailed time and frequency domain VCSEL characterization results, and a finite element simulation showing
good agreement with experimental data.
Directly modulated 850nm oxide VCSEL is a key enabling technology for short reach, high speed
data-communication applications. Current commercially available optical transceiver products operate at data rate
up to 10Gb/s per channel, for aggregate data rate of 70Gb/s and beyond, in the case of parallel optical data link.
High volume, low cost, over temperature optical modulation speed, spectral width, output power, thermal power
budget, large signal electrical interaction with the IC driver, and reliability are some of the key requirements
driving the 850nm oxide VCSEL development. In this paper, we discuss some of the engineering issues
investigated for developing a viable oxide VCSEL product operating at 10Gb/s per channel and higher data rate.