Zinc telluride (ZnTe) compound is one of the attractive elements of the II–VI group also having wide range of
applications such as switching devices, light-emitting diode, solar cells and photodetectors. In this paper, the
microstructure and electrical properties of znic telluride thin films were studied by using thermal-furnace evaporation
with emphasis on the effects of argon pressure and deposition temperature. Crystallinity, mobility, carrier concentration
and sheet resistance are shown to be dependent on the argon pressure and deposition temperature. The grain size was
increased with increasing the annealing temperature and decreasing the argon pressure. The highest carrier concentration
of 1.9×10<sup>16</sup> cm<sup>-3</sup>, the lowest sheet resistance of 3180 Ω/ and the largest mobility of 5.1×10<sup>3</sup> cm<sup>2</sup>V<sup>-1</sup>S<sup>-1</sup> are presented at
an argon pressure of 100°sccm and a deposition temperature of 580°C, respectively.