In this work, inelastic tunneling spectroscopy (IETS) of SiGe:C channel heterojunction PMOSFETs has been used to
study the modes of vibrations (due to molecular species and phonons) present in the tunneling junctions and also to
characterize the traps responsible for trapping/de-trapping of channel carriers. Peaks observed in the second derivative
spectra of the drain-current provided information for identification of various traps and defects in the metal-insulatorsemiconductor
(MIS) structures for thin tunneling oxide present in the SiGe:C PMOSFETs. Both the optical and acoustic
phonons are observed for SiGe, SiO2 and Si-C. From the spectra obtained by varying gate voltage between 180-350 mV
(in both forward and reverse bias), the trapping/de-trapping process has been observed which comprises of charge
trapping and trap-assisted conduction phenomena. The traps that take part in the trapping of carriers are also identified
from the results.
Ultra-thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19 by atomic layer deposition
(ALD). The effects of metal gate electrodes (Au, Pd and Pt) on dielectric properties and charge trapping behavior of
metal-insulator-semiconductor (MIS) capacitors are investigated. Grazing incidence X-ray diffraction (GIXRD) analysis
shows that the conversion from amorphous to crystalline phase start to appear in the HfO2 films when annealed between
400-500°C. The measured ΔVfband hysteresis in high frequency C-V characteristics are used to study the pre-existing
traps in the dielectric. Low-frequency noise characteristics have been measured using MIS capacitors with contact area ~
2×10-3 cm2. The power spectral densities (PSD) of the MIS capacitors with metal gate electrodes are compared and their
bias dependencies are reported. While a two level random telegraph signal (RTS) is observed at low voltage, multilevel
RTS is observed at higher bias voltages.
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