Heavy-metal-containing quantum dots (QDs), such as CdSe-based quantum dots (QDs) have been applied to lightconversion nano-phosphors due to tunable emission and pure colors. Unfortunately, those QDs involve toxic elements and synthesize in a hazardous halogenated solvent. Therefore, Eco-friendly gold nano-clusters (AuNCs@GSH) in solution phase have gained much attention for promising applications in biophotonics. For the first time, we explore the feasibility of aqueous-solution-processed AuNCs@GSH as luminescent species for promising applications in "green" luminescent solar concentrators (LSCs) by investigating their photophysical properties. Due to ligand-to-metal chargetransfer (LMCT) state, we found that such "green" LSCs formed by Zn-AuNCs@GSH dispersed in a polymer matrix exhibit large Stokes shift and small scattering losses. Compared to AuNCs@GSH, the Zn-AuNCs@GSH dispersed in a polymer matrix could suppress non-radiative recombination rates, inducing the enhancement of luminescence and the increase of PL-QY from 2% to 40%.
The CdSe-based quantum dots (QDs) have been applied to light-conversion nano-phosphors due to tunable emission and pure colors. However, these cadmium-containing QDs was strongly toxic and synthesized in a hazardous solvent. In addition, conventional QD nano-phosphors with a small Stokes shift suffered from reabsorption losses and aggregation-induced photoluminescence (PL) quenching in the solid state. Therefore, there is a need to develop nanophosphors with a large Stokes shift. Here, we demonstrate one-pot synthesis of gold nanoclusters (AuNCs) using 3- aminopropyltrimethoxysilane (APS) and glutathione as protection ligand with a large Stokes shift. The gold nanoclusters with a large Stokes shift can mitigate the aggregation-induced PL quenching and reabsorption losses, which would be potential candidates for "green" nano-phosphors.
The photoluminescence (PL) properties in GaN epilayers were investigated after depositing graphene quantum
dots (GQDs) on the GaN surface. A seven-fold enhancement of the PL intensity in GaN was observed in the GQD/GaN
composite. On the basis of the PL dynamics, the enhancement of PL in GaN is attributed to the carrier transfer from
GQDs to GaN. Such a carrier transfer is caused by the work function difference between GQDs and GaN, evidencing by
Kelvin probe measurement. The improved PL is promising toward applications in the GaN-based optoelectronic devices.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.